AWT6223RM26P9

InGaP HBT Technology Optimized for a 50  System Internal Reference Voltage Integrated GSM/EDGE Power Control with Temperature Compensation • Low Profile Surface Mount Package: 6 mm x 8 mm x 1 mm • RoHS Compliant Package, 250 oC MSL-3 WCDMa MODe • HSDPA Compliant • High Efficiency: 41% @ POUT = +28.5 dBm 21% @ POUT = +16 dBm • Low Quiescent Current: 12 mA • Low Leakage Current in Shutdown Mode: 50 dB • EGPRS Capable (class 12) eDGe MODe • +29 dBm GSM850/900 Output Power • +28.5 dBm DCS/PCS Output Power • 27 % GSM850/900 PAE • 30 % DCS/PCS PAE • -63 dBc/30 kHz Typical ACPR (400 kHz) • -77 dBc/30 kHz Typical ACPR (600 kHz) • • • • Features WCDMa/GsM/GPrs/Polar eDGe Power Amplifier Module with Integrated Power Control Data sheet - rev 2.0 InGaP HBT MMIC technology to provide reliability, temperature stability, and ruggedness. This pentaband module consists of three amplifier chains; one to support GSM/GPRS/EGPRS in cellular bands, one to support GSM/GPRS/EGPRS in DCS/PCS bands, and one to support WCDMA in the IMT band. In addition, the AWT6223R module includes an internal reference voltage and integrated power control with temperature compensation for use in GMSK and 8-PSK modes of operation. These features facilitate fast and easy production calibration, minimize performance variation over temperature, and reduce the number of external components required. The WCDMA PA incorporates ANADIGICS’ HELP2 t echnology. Through selectable bias modes, the AWT6223R achieves optimal efficiency across d ifferent output power levels, specifically at low and mid-range power levels where the PA typically operates, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for an external reference voltage and switch components, reducing PCB area and BOM costs. All of the RF ports for this device are internally matched to 50 . The RF inputs GSM_IN and DCS/ PCS_IN both have shunt resistors to ground to maintain a good input VSWR as the VRAMP power control voltage is varied. Internal DC blocks are provided at the RF outputs. CEXT2 WCDMA_IN VMODE VEN DCS/PCS_IN BS TX_EN VBATT CEXT1 VRAMP GSM850/900_IN 1 2 3 4 5 6 7 8 9 10 11 VCC_GSM CMOS Bias/Power Controller Voltage Regulator and Bias Control aWt6223r TM aPPLICatIONs • 22 21 20 19 18 17 16 15 14 13 12 VCC_WCDMA WCDMA_OUT GND DCS/PCS_OUT GND GND CEXT3 GND GND GSM850/900_OUT 3G Handsets, Smartphones, Data Devices Incorporating: • WCDMA (IMT) • GSM850/GSM900/DCS/PCS Bands • GMSK and 8-PSK (Open Loop Polar) Modulations PrODuCt DesCrIPtION The AWT6223R WEDGE module supports dual, tri, or quad band operation using GMSK/GPRS and 8-PSK (open loop polar) modulations, and WCDMA operation in the IMT band. The AWT6223R module is manufactured using ANADIGICS’ advanced 11/2008 Figure 1: Block Diagram aWt6223r CEXT2 WCDMA_IN VMODE VEN DCS/PCS_IN BS TX_EN VBATT CEXT1 VRAMP GSM850/900_IN 1 2 3 4 5 6 7 8 9 10 11 VCC_GSM GND 22 21 20 19 18 17 16 15 14 13 12 VCC_WCDMA WCDMA_OUT GND DCS/PCS_OUT GND GND CEXT3 GND GND GSM850/900_OUT Figure 2: Pinout (X - ray top view) table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 11 NaMe WCDMA_IN VMODE VEN DCS/PCS_IN BS TX_EN VBATT CEXT1 VRAMP DesCrIPtION WCDMA RF Input WCDMA Mode Control Voltage WCDMA Shutdown DCS/PCS RF Input Band Select Logic Input TX Enable Logic Input Battery Supply Bypass for Internal Voltage Regulator Analog signal used to control the GSM output power PIN 12 13 14 15 16 17 18 19 20 21 22 NaMe DesCrIPtION GSM850/900_OUT GSM850/900 RF Output GND GND C EXT3 GND GND DCS/PCS_OUT GND WCDMA_OUT VCC_WCDMA C EXT2 Ground Ground Bypass for Power Control Regulator Ground Ground DCS/PCS RF Output Ground WCDMA RF Output WCDMA Supply Voltage Bypass for WCDMA VCC1 GSM850/900_IN GSM850/900 RF Input VCC_GSM VCC test point for GSM secton. Do not connect. Do not ground. 2 Data Sheet - Rev 2.0 11/2008 aWt6223r eLeCtrICaL CHaraCterIstICs table 2: absolute Maximum ratings ParaMeter Supply Voltage (VBATT) Supply Voltage (VCC_WCDMA) RF Input Power (RFIN) GSM/EDGE Output Control Voltage (VRAMP) WCDMA Control Voltages (VMODE, VEN) Storage Temperature (TSTG) MIN -0.3 0 -55 MaX +6 +5 10 1.8 3.5 150 uNIts V V dBm V V °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. CEXT2 >+2500 V +1500 V +1500 V +1500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +2500 V +1300 V +1500 V +2500 V +2500 V +2500 V +2500 V 4), Fo  12.75 GHz Stability MIN 824 0 34.5 32.0 48 tYP 3 35 32.5 52 -42 -25 -36 -25 -20 -30 -30 MaX 849 5 -30 -20 -20 -20 -10 -10 -10 uNIt MHz dBm dBm dBm % dBm dBm Freq = 824 to 849 MHz VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm Freq = 824 to 849 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm COMMeNts dBm dBm dBm dBm VRAMP =0.2V to VRAMP_MAX Over all output power levels Over all output power levels Over all output power levels VSWR = 8:1 All Phases , POUT < 34.5 dBm Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm Over all output power levels No Permanent Degradation, VSWR 10:1, All Phase Angles -86 1.5:1 -83 2.5:1 dBm VSWR Data Sheet - Rev 2.0 11/2008 5 aWt6223r Table 7: Electrical Characteristics for GSM900 GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VeN = LOW) ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation 2Fo @ DCS/PCS port 3Fo @ DCS/PCS port Second Harmonic Third Harmonic n x Fo (n > 4), Fo  12.75 GHz Stability ( Fo ) MIN 880 0 34.5 32.0 50 - tYP 3 35 32.5 55 -40 -25 -34 -22 -25 -27 -30 MaX 915 5 -30 -20 -20 -17 -10 -10 -10 uNIt MHz dBm dBm dBm % dBm dBm COMMeNts Freq = 880 to 915 MHz VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm Freq = 880 to 915 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm dBm dBm dBm dBm VRAMP =0.2V to VRAMP_MAX Over all output power levels Over all output power levels Over all output power levels VSWR = 8:1 All Phases , POUT < 34.5 dBm Ruggedness -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 34.5 dBm Over all output power levels No Permanent Degradation, VSWR 10:1, All Phase Angles -83 -86 1.5:1 -77 -83 2.5:1 dBm dBm VSWR RX Noise Power Input Return Loss - 6 Data Sheet - Rev 2.0 11/2008 aWt6223r Table 8: Electrical Characteristics for GSM850 8PSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VeN = LOW) ParaMeter Operating Frequency Input Power PAE ACPR 200 kHz 400 kHz 600 kHz 1800 kHz EVM ( FIN ) MIN 824 880 0 20 tYP 3 27 MaX 849 915 5 - uNIt MHz dBm % COMMeNts FIN = 824 to 849 MHz POUT set = +29 dBm - -39 -63 -74 -77 1 -34 -58 -64 -68 5 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz % All conditions under Polar operation POUT = +29 dBm All Conditions under Polar operation POUT = +29 dBm Data Sheet - Rev 2.0 11/2008 7 aWt6223r Table 9: Electrical Characteristics for DCS GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VeN = LOW) ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic n x Fo (n > 4), Fo  12.75 GHz MIN 1710 0 32 29.5 45 tYP 3.0 33 30.5 50 -40 -24 -18 -24 -30 MaX 1785 5 -33 -20 -10 -10 -10 uNIt MHz dBm dBm dBm % dBm dBm dBm dBm dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 5dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 5 dBm Over all output power levels Over all output power levels Over all output power levels COMMeNts VSWR = 8:1 All Phases , POUT < 32 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm Over all output power levels No Permanent Degradation, VSWR 10:1, All Phase Angles -86 1.5:1 -80 2.5:1 dBm VSWR 8 Data Sheet - Rev 2.0 11/2008 aWt6223r Table 10: Electrical Characteristics for PCS GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VeN = LOW) ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic n x Fo (n > 4), Fo  12.75 GHz MIN 1850 0 32 29.5 45 tYP 3.0 33 30.5 50 -37 -22 -28 -24 -30 MaX 1910 5 -33 -18 -10 -10 -10 uNIt MHz dBm dBm dBm % dBm dBm dBm dBm dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 5dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 5 dBm Over all output power levels Over all output power levels Over all output power levels COMMeNts VSWR = 8:1 All Phases , POUT < 32 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 32 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX =1930 to 1990 MHz, POUT < 32 dBm Over all output power levels No Permanent Degradation, VSWR 10:1, All Phase Angles -86 1.5:1 -80 2.5:1 dBm VSWR Data Sheet - Rev 2.0 11/2008 9 aWt6223r Table 11: Electrical Characteristics for DCS 8PSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VeN = LOW) ParaMeter Operating Frequency Input Power PAE ACPR 200 kHz 400 kHz 600 kHz 1800 kHz EVM ( FIN ) MIN 1710 1850 0 25 tYP 3 30 MaX 1785 1910 5 - uNIt MHz dBm % COMMeNts FIN = 1710 to 1785 MHz POUT set = +28.5 dBm - -38 -64 -77 -77 1 -34 -58 -64 -68 5 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz % All conditions under Polar operation POUT = +28.5 dBm All Conditions under Polar operation POUT = +28.5 dBm 10 Data Sheet - Rev 2.0 11/2008 aWt6223r Table 12: WCDMA Operating Conditions ParaMeter Case temperature (TC) Supply Voltage (VCC) WCDMA Enable Voltage (VEN) Mode Control Voltage (VMODE) RF Output Power (POUT) 3GPP HSDPA Case A HSDPA Case B HSDPA Case C MIN -20 +3.2 +2.2 0 +2.2 0 +28.0 (1) +27.0 (1) +26.0 (1) +25.5 (1) tYP +3.4 +2.4 +2.4 +28.5 +27.5 +26.5 +26.0 MaX uNIts 85 +4.2 +3.1 +0.5 +3.1 +0.5 °C V V V COMMeNts POUT < +28.5 dBm PA "on" PA "shut down" Low Bias Mode High Bias Mode dBm 1/15 < c/d < 12/15 13/15 < c/d < 15/8 15/7 < c/d < 15/0 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) WCDMA operation at VCC = +3.2 V, Pout is derated by 0.5 dB. (2) Do not apply a DC voltage to the WCDMA_IN RF input. table 13: WCDMa Bias Control aPPLICatION WCDMA - low power WCDMA - high power Shutdown POut LeveLs +16 dBm LOGIC Low High Shutdown veN +2.4 V +2.4 V 0V vMODe +2.4 V 0V 0V Notes: 1. For WCDMA operation set TX_EN = LOW. Data Sheet - Rev 2.0 11/2008 11 aWt6223r table 14: electrical Characteristics for WCDMa (Unless Otherwise Specified: TC = 25 °C, VBATT = +3.4 V, TX_EN = LOW, 50 Ω system, VeN = 2.4 v) ParaMeter Operating Frequency Gain ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset Power-Added Efficiency (1) Quiescent Current (Icq) Enable Current Battery Current Mode Control Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure MIN 1920 24.5 13.0 37 18 tYP 26.5 15.0 -40 -43 -56 -52 41 21 12 0.2 3 0.3 -138 -43 -50 MaX 1980 28.5 17.0 -38 -38 -48 -48 20 1 5 1 -135 -35 -35 2:1 uNIt MHz dB POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V VMODE = +2.4 V through VEN pin through VBATT pin, VMODE = +2.4 V through VMODE pin, VMODE = +2.4 V COMMeNts dBc dBc % mA mA mA mA dBm/Hz 2110 MHz to 2170 MHz dBc VSWR POUT < +28.5 dBm - - -70 dBc POUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range 10:1 - - VSWR Notes: (1) ACLR and Efficiency measured at 1950 MHz. 12 Data Sheet - Rev 2.0 11/2008 aWt6223r aPPLICatION INFOrMatION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The WCDMA power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to both the VEN and VMODE voltages. Bias Modes The WCDMA power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Two operating modes are recommended to optimize current consumption. High Bias operating mode is for POUT levels > 16 dBm. At or below +16 dBm, the PA should be “Mode Switched” to Low Bias Mode. BATTERY VOLTAGE 4.7uF ++ 10nF++ 22pF** 22 VBATT SUPPLY VOLTAGE FROM DC-DC CONVERTER*** IMT RF INPUT WCDMA BIAS MODE WCDMA ENABLE DCS/PCS RF INPUT BAND SELECT TX ENABLE BATTERY VOLTAGE 4.7uF ++ 27pF ++ 27pF ++ 2.7pF ** 22nF DAC OUTPUT GSM850/900 RF INPUT 10K * ** 1 2 27pF ++ WCDMA_IN VMODE VEN DCS/PCS_PIN BS TX_EN VBATT CEXT VRA MP GSM850/900_IN VCC2_GSM 11 V CC_WCDMA WCDMA_OUT GND DCS/PCS_OUT GND GND VCC_OUT GND GND GSM850/900_OUT 21 20 19 18 17 16 15 14 13 12 GSM850/900 RF OUTPUT 1nF** 10nF ++ 22pF** 3 4 5 6 7 8 9 10 WCDMA RF OUTPUT DCS/PCS RF OUTPUT 27pF ++ aWt6223r 27pF* * Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. *** If the final design uses a DC-DC Converter, otherwise connect Pin 21 directly to V BATT Pin 22. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 4: application Circuit Data Sheet - Rev 2.0 11/2008 13 aWt6223r PaCKaGe OutLINe Figure 5: Package Outline - 22 Pin 6 mm x 8 mm x 1 mm surface Mount Package Figure 6: Branding Specification 14 Data Sheet - Rev 2.0 11/2008 aWt6223r COMPONeNt PaCKaGING 8.00±.10 [.314±.004] Ø1.50±.10 [Ø.059±.004] 2.00±.10 [.079±.004] 4.00±.10 [.157±.004] 1.75±.10 [.069±.004] 6°MAX 16.00+.30/-.10 [.630+.012/-.004] 7.50±.10 [.295±.004] 8.36±.10 [.329±.004] Bo PIN#1 ORIENTATION t Ø1.50±.25 [Ø.059±.010] 1.78±.10 [.070±.004] .305±.02 [.0120±.0007] Ko Ao NOTES: 1. MATERIAL: 3000 (CARBON FILLED POLYCARBONATE) 100% RECYCLABLE. 6.35±.10 [.250±.004] 8°MAX Figure 7: tape & reel Packaging table 14: tape & reel Dimensions PaCKaGe tYPe 6 mm x 8 mm x 1 mm taPe WIDtH 16 mm POCKet PItCH 8 mm reeL CaPaCItY 2500 MaX reeL DIa 13" Data Sheet - Rev 2.0 11/2008 15 aWt6223r OrDerING INFOrMatION OrDer NuMBer teMPerature raNGe -20 oC to +85 oC PaCKaGe DesCrIPtION COMPONeNt PaCKaGING AWT6223RM26P8 RoHS Compliant 24 Pin 6 mm x 8 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module RoHS Compliant 24 Pin 6 mm x 8 mm x 1 mm Tape and Reel, Partial Reel Surface Mount Module AWT6223RM26P9 -20 oC to +85 oC ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPOrtaNt NOtICe ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. WarNING 16 Data Sheet - Rev 2.0 11/2008