AAT8303ITS-T1

20V P-Channel Power MOSFET General Description The AAT8303 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's proprietary ultrahigh-density trench technology and space-saving, small-outline, J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOPJW-8 package. AAT8303 Features • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -10A @ 25°C Low On-Resistance: — 14mΩ @ VGS = -4.5V — 24mΩ @ VGS = -2.5V TSOPJW-8 Package Top View D 8 D 7 D 6 D 5 Applications • • • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Load Switches Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S 2 S 3 S 4 G Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C Value -20 ±12 ±10 ±8 ±48 -2.3 -55 to 150 -55 to 150 Units V A °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State Junction-to-Ambient t