AAT8401IGY-T1

20V P-Channel Power MOSFET General Description The AAT8401 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™’s ultra high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size. AAT8401 Features • • • VDS(MAX) = -20V ID(MAX) 1 = -2.4A @ 25°C Low RDS(ON): • 100 mΩ @ VGS = -4.5V • 175 mΩ @ VGS = -2.5V Applications • • • Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment SC59 Package Top View D 3 Preliminary Information 1 G 2 S Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value -20 ±12 ±2.4 ±2.0 ±9 -0.9 1.0 0.6 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25°C TA = 70°C W °C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RθJA RθJA2 RθJF Description Typical Junction-to-Ambient steady state 1 Maximum Junction-to-Ambient t