AAT9125IAS-B1

AAT9125 30V N-Channel Power MOSFET General Description The AAT9125 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. Features • • • PWMSwitch™ VDS(MAX) = 30V ID(MAX) = 12.5A @ 25°C Low RDS(ON): • 9 mΩ @VGS = 10V • 14 mΩ @ VGS = 4.5V Applications • • • • DC-DC converters for mobile CPUs Battery-powered portable equipment High power density switch-mode supplies Point-of-use Power Supplies SOP8 Package Preliminary Information Top View D 8 D 7 D 6 D 5 1 S 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value 30 ±20 ±12.5 ±10 ±52 2.25 2.5 1.6 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range A W °C Thermal Characteristics Symbol RθJA RθJC Description Typical Junction-to-Ambient Typical Junction-to-Case 1 Value 50 25 Units °C/W °C/W Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width 9125.2001.12.0.9 1 AAT9125 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions Min 30 7.5 11.5 52 1.0 ±100 1 5 30 31 60 10 9 20 14 100 38 50 100 9 14 Typ Max Units V mΩ A V nA µA S nC nC nC nC ns ns ns ns V A DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA VGS=10V, ID=12A RDS(ON) Drain-Source ON-Resistance 2 VGS=4.5V, ID=10A ID(ON) On-State Drain Current 2 VGS=10V ,VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=250µA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V VGS=0V,VDS=30V IDSS Drain Source Leakage Current VGS=0V,VDS=30V, TJ=55°C gfs Forward Transconductance 2 VDS=15V, ID=12.5A 3 Dynamic Characteristics QG Total Gate Charge VDS=15V, ID=12.5A, VGS=5V QGT Total Gate Charge VDS=15V, ID=12.5A, VGS=10V QGS Gate-Source Charge VDS=15V, ID=12.5A, VGS=10V QGD Gate-Drain Charge VDS=15V, ID=12.5A, VGS=10V tD(ON) Turn-ON Delay VDD=15V, VGS=10V, RD=1.2Ω, RG=6Ω tR Turn-ON Rise Time VDD=15V, VGS=10V, RD=1.2Ω, RG=6Ω tD(OFF) Turn-OFF Delay VDD=15V, VGS=10V, RD=1.2Ω, RG=6Ω tF Turn-OFF Fall Time VDD=15V, VGS=10V, RD=1.2Ω, RG=6Ω Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=2.25A IS Continuous Diode Current TA=25ºC Note 2: Pulse test: Pulse Width = 300µs Note 3: Guaranteed by design. Not subjected to production testing. 35 30 160 80 1.1 2.25 2 9125.2001.12.0.9 AAT9125 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Forward Characteristics 50 Normalized RDS(ON) RDS(ON) / RDS(ON) at gate = 10 V 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 4.5V 40 30 20 10 0 0 1 2 3 4 4V 3.5 V 4V 4.5 V ID (A) 6V 5V 10V 3.5V 2V 3V 5V 6V 10 V 5 VD (V) ID (A) RDS(ON) vs. VG 50 50 Transfer 5A 40 15A 10A ID (A) 40 RDS(ON) (mW) VG=VD 30 20 10 0 30 20 10 0 0 2 4 6 8 10 0 1 2 3 4 5 VG (V) VG (V) Source to Drain Voltage 100 10 8 10 Gate Charge Characteristics Gate Voltage (V) 0.6 0.8 1 1.2 ISD (A) 6 1 4 2 0 0 10 20 30 40 50 60 0.1 0.4 VSD (V) Gate Charge (nC) 9125.2001.12.0.9 3 AAT9125 30V N-Channel Power MOSFET Ordering Information Part Number Package SOP-8 Marking Bulk AAT9125IAS-B1 Tape and Reel AAT9125IAS-T1 Package Information SOP-8 Dim A A1 A2 B C D E e H L Y θ1 EH D 7 (4x) A A2 Q c Millimeters Min Max 1.35 1.75 0.10 0.25 1.45 0.33 0.51 0.19 0.25 4.80 5.00 3.80 4.00 1.27 5.80 6.20 0.40 1.27 0.00 0.10 0° 8° Inches Min Max 0.053 0.069 0.004 0.010 0.057 0.013 0.020 0.007 0.010 0.189 0.197 0.150 0.157 0.050 0.228 0.244 0.016 0.050 0.000 0.004 0° 8° b y e A1 L Note: 1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2. TOLERANCE 0.1000mm (4mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY: 0.1000mm 4. DIMENSION L IS MEASURED IN GAGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER; CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. Advanced Analogic Technologies, Inc. 1250 Oakmead Parkway, Suite 310, Sunnyvale, CA 94086 Phone (408) 524-9684 Fax (408) 524-9689 4 9125.2001.12.0.9