UTCHLB124

UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage * High Reliability TO-220 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: HLB124L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (PULSE) Base Current (DC) Base Current (PULSE) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic ICP IB IBP Pc TJ TSTG RATINGS 600 400 8 2 4 1 2 35 150 -40 ~ +150 UNIT V V V A A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO *VCE (sat) 1 C-E Saturation Voltage *VCE (sat) 2 *VBE (sat) 1 B-E Saturation Voltage *VBE (sat) 2 *hFE1 DC Current Gain *hFE2 *hFE3 Gain-Bandwidth Product fT *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2% TEST CONDITIONS IC = 1mA IC = 10mA IE = 1mA VCB = 600V VEB = 9V, IC = 0 IC = 0.1A, IB = 10mA IC = 0.3A, IB = 30mA IC = 0.1A, IB = 10mA IC = 0.3A, IB = 30mA VCE = 5V, IC = 0.3A VCE = 5V, IC = 0.5A VCE = 5V, IC = 1A VCE = 10V, IC = 0.3A, f=1MHz MIN 600 400 8 TYP MAX UNIT V V V 10 µA 10 µA 0.3 V 0.8 V 0.9 V 1.2 V 40 10 10 6 15 MHz CLASSIFICATION OF HFE1 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R203-029,A www.unisonic.com.tw UTC HLB124 RANK Range NPN EPITAXIAL SILICON TRANSISTOR B1 10 ~ 17 B2 13 ~ 22 B3 18 ~ 27 B4 23 ~ 32 B5 28 ~ 37 B6 33 ~ 40 CHARACTERISTICS CURVE Current Gain & Collector Current 100 100000 Saturation Voltage & Collector Current Saturation Voltage (mV) 125℃ 25℃ hFE 10 75℃ 10000 100 0 75℃ 100 125℃ 25℃ VCE(sat) @ IC = 10IB 1 1 10 100 hFE @ V CE = 5V 1000 C 10 1 10 10000 100 1000 C 10000 Collector Current, I (mA) Collector Current, I (mA) Saturation Voltage & Collector Current 10000 1000 On Voltage & Collector Current Saturation Voltage (mV) VCE = 5V 75℃ 25℃ On Voltage (mV) 100 1 10 100 1000 10000 10000 1000 125℃ VBE(sat) @ IC = 10IB 1 10 100 1000 100 Collector Current, I C (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 10 Swithing Time & Collector Current VCC = 100V, IC = 5IB1 = 5IB2 Switching Time (µs) Capacitance (Pf) 10 Cob Ton 1 TSTG Tf 1 1 10 100 0.1 0.1 1 10 Reverse Biased Voltage (V) Collector Current (A) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R203-029,A www.unisonic.com.tw UTC HLB124 10000 NPN EPITAXIAL SILICON TRANSISTOR Safe operating Area Collector Current (mA) 1000 PT = 1ms PT = 100ms PT = 1s 100 10 1 1 10 100 1000 Forward Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R203-029,A www.unisonic.com.tw