AMA460N-TI-PF

Analog Power AMA460N N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 27 @ VGS = 10V 33 @ VGS = 4.5V ID (A) 8.7 7.8 Typical Applications: • DC/DC Conversion Circuits • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TA=25°C 8.7 ID Continuous Drain Current a TA=70°C 6.9 b IDM Pulsed Drain Current 40 a I 4.1 Continuous Source Current (Diode Conduction) S T =25°C 3 A PD Power Dissipation a TA=70°C 1.9 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t