APM1401SC-TRL

APM1401S P-Channel Enhancement Mode MOSFET Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V Pin Description • • • • Super High Dense Cell Design Reliable and Rugged SC-70 Package Lead Free Available (RoHS Compliant) S Top View of SC-70 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G D P-Channel MOSFET Ordering and Marking Information APM1401 Lead Free Code Handling Code Tem p. Range Package Code Package Code S : SC-70 Operating Junction Tem p. Range C : -55 to 150 ° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM1401 S : 01 Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM1401S Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in2 pad area, t (TA = 25°C unless otherwise noted) Rating -20 ±10 VGS=-4.5V -0.65 -2.1 -0.5 150 -55 to 150 TA=25°C TA=100°C 0.34 0.13 360 W °C/W A °C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient ≤ 10sec. (TA = 25°C unless otherwise noted) APM1401S Min. Typ. Max. Electrical Characteristics Symbol Parameter Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) gfs VSD a a -20 -1 -30 -0.5 -0.7 370 550 6.5 -0.8 -1.3 -1 ±100 480 720 V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Forward Transconductance Diode Forward Voltage b VDS=-16V,VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-0.65A VGS=-2.5V, IDS=-0.45A VDS=-10V, IDS=-0.65A ISD=-0.5A, VGS=0V V nA mΩ S V Dynamic Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz 136 38 26 pF Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 www.anpec.com.tw APM1401S Electrical Characteristics (Cont.) Symbol td(ON) Tr td(OFF) Tf Parameter Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b (TA = 25°C unless otherwise noted) APM1401S Min. Typ. 5 8 9.6 5 Max. 10 12 15 15 ns Test Condition Unit VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 7.4 VDS=-10V, VGS=-4.5V, IDS=-0.65A 1.1 1.2 9.6 nC Gate-Source Charge Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM1401S Typical Characteristics Power Dissipation 0.40 0.8 Drain Current 0.32 0.24 -ID - Drain Current (A) 0.6 Ptot - Power (W) 0.4 0.16 0.2 0.08 o 0.00 TA=25 C 0 20 40 60 80 100 120 140 160 TA=25 C, VG=4.5V 0.0 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 5 2 1 Thermal Transient Impedance n) L im it -ID - Drain Current (A) ds 1 (o Duty = 0.5 R 1ms 0.2 10ms 0.1 0.1 0.05 0.1 100ms 1s o 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 360 C/W 2 DC TA=25 C 0.01 0.1 1 10 50 0.01 1E-4 1E-3 0.01 0.1 10 100 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 4 www.anpec.com.tw APM1401S Typical Characteristics (Cont.) Output Characteristics 2 .5 V 2 .0 -2 .5 V = -3 th ru -1 0 V GS 0.9 0.8 VGS= -2.5V Drain-Source On Resistance RDS(ON) - On - Resistance (Ω) 0.7 0.6 0.5 VGS= -4.5V 0.4 0.3 0.2 0.1 0.0 -ID - Drain Current (A) 1 .5 1 .0 -2 V 0 .5 -1 .5 V 0 .0 0 1 2 3 4 5 0 1 2 3 4 5 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 2 .5 1.75 1.50 2 .0 Gate Threshold Voltage IDS = -250µA Normalized Threshold Voltage -ID - Drain Current (A) 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 1 .5 T j= 1 2 5 C 1 .0 T j= 2 5 C o o T j= - 5 5 C o 0 .5 0 .0 0 .0 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0 3 .5 4 .0 4 .5 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 5 www.anpec.com.tw APM1401S Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -0.8A 1 3 Source-Drain Diode Forward Normalized On Resistance -IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj = 25°C : 370m Ω 0 25 50 75 100 125 150 Tj=150 C o 0.1 Tj=25 C o 0.01 0.0 0.4 0.8 1.2 1.6 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 250 Frequency=1MHz 5 VDS= -10V IDS= -0.8A Gate Charge -VGS - Gate-source Voltage (V) 200 4 C - Capacitance (pF) 150 Ciss 3 100 2 50 Crss 0 0 2 4 6 8 Coss 1 0 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 6 www.anpec.com.tw APM1401S Packaging Information SC-70 D e1 e £c L E1 E L1 b 0.20 C A1 A2 A S ymbol A A1 A2 b c D E E1 e e1 L L1 θ Dimens ions In M illim et ers M in. M ax. 0 .900 1.100 0.000 0.900 0 .200 0 .080 2 .000 1 .150 2.150 0 .650T YP 1.200 0 .525RE F 0.260 0° 0.460 8° 7 Dimens ions In Inches M in. M ax. 0.035 0.043 0.000 0.035 0.008 0.003 0.079 0.045 0.085 0.026T YP 0.047 0.021PE F 0.010 0° 0.018 8° www.anpec.com.tw 0.100 1.000 0.400 0.150 2.200 1.350 2.450 1.400 0.004 0.039 0.016 0.006 0.087 0.053 0.096 0.055 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 APM1401S Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP R am p-up tp C ritical Zone T L to T P T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8 www.anpec.com.tw APM1401S Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw APM1401S Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 178±1 B C J T1 14.4 ± 0.4 13.0 + 0.2 1.15 ± 0.1 12. ±0.2 D D1 Po P1 W 8.0+ 0.3 2.8± 0.2 - 0.1 Ao Bo T2 P 4 ± 0.1 Ko E 1.75± 0.1 t SC-70 F 3.5 ± 0.05 1.55± 0.05 1.00 +0.25 4.0 ± 0.1 2.0 ± 0.05 2.4 ± 0.1 2.4± 0.1 1.19± 0.1 0.25±0.013 Cover Tape Dimensions Application SC- 70 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw