APM1402S
N-Channel Enhancement Mode MOSFET
Features
•
20V/0.8A , RDS(ON)=190mΩ(typ.) @ VGS=4.5V RDS(ON)=310mΩ(typ.) @ VGS=2.5V
Pin Description
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
D
Top View of SC-70
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S G
N-Channel MOSFET
Ordering and Marking Information
APM1402 Lead Free Code Handling Code Tem p. Range Package Code Package Code S : SC-70 Operating Junction Tem p. Range C : -55 to 150 ° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device
APM1402 S :
02
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw
APM1402S
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
2
(TA = 25°C unless otherwise noted)
Rating 20 ±8 VGS=4.5V 0.8 3 0.3 150 -55 to 150 TA=25°C TA=100°C 0.34 0.13 360 W °C/W A °C V A Unit
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
APM1402S Min. Typ. Max.
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD
a a
VGS=0V, IDS=250µA VDS=16V, VGS=0V VDS=VGS, IDS=250µA VGS=±8V, VDS=0V VGS=4.5V, IDS=1.2A VGS=2.5V, IDS=0.6A ISD=0.3A, VGS=0V
20 1 0.5 0.75 190 310 0.8 1.2 ±10 250 410 1.3
V µA V µA mΩ V
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
Dynamic Characteristics Ciss Input Capacitance Coss Crss td(ON) Tr td(OFF) Tf Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
131 30 15 5 8 9.6 5 10 12 15 15 ns pF
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM1402S
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
Test Condition
APM1402S Min. Typ. Max.
Unit
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
5.5 VDS=10V, VGS=4.5V, IDS=0.8A 0.6 0.84
7.2 nC
Gate-Source Charge
Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM1402S
Typical Characteristics
Power Dissipation
0.40 1.0
Drain Current
0.32
0.8
0.24
ID - Drain Current (A)
o
Ptot - Power (W)
0.6
0.16
0.4
0.08
0.2
0.00
TA=25 C 0 20 40 60 80 100 120 140 160
0.0
TA=25 C, VG=4.5V 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
5
im it
Thermal Transient Impedance
2 1
Duty = 0.5
on )L
ID - Drain Current (A)
1
Rd
s(
300µs 1ms
0.2 0.1
10ms
0.1
0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 360 C/W
2
0.1
100ms
1s
o
DC
T =25 C 0.01 A 0.1
1
10
50
0.01 1E-4 1E-3 0.01
0.1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM1402S
Typical Characteristics (Cont.)
Output Characteristics
5 VGS= 4, 5, 6, 7, 8, 9, 10V 0.40 VGS=2.5V 0.45
Drain-Source On Resistance
RDS(ON) - On - Resistance (Ω)
4
ID - Drain Current (A)
3V 3 2.5V 2 2V 1 1.5V 0 0 1 2 3 4 5
0.35 0.30 0.25 VGS=4.5V 0.20 0.15 0.10 0.05
0
1
2
3
4
5
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
5 1.8
Gate Threshold Voltage
IDS =250µA 1.6
4
Normalized Threshold Voltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
ID - Drain Current (A)
3
2 Tj=125 C 1 Tj=25 C 0 0.0
o o
Tj=-55 C
o
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM1402S
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0 1.8 VGS = 4.5V IDS = 0.8A Tj=150 C
o
Source-Drain Diode Forward
5
Normalized On Resistance
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj = 25°C : 190m Ω 0 25 50 75 100 125 150 0.1 0.0
IS - Source Current (A)
1
Tj=25 C
o
0.4
0.8
1.2
1.6
2.0
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
250 Frequency=1MHz 5 VDS= 10V IDS= 0.8A
Gate Charge
VGS - Gate-source Voltage (V)
20
200
4
C - Capacitance (pF)
150 Ciss
3
100
2
50
Coss Crss
1
0
0
4
8
12
16
0
0
1
2
3
4
5
6
7
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM1402S
Packaging Information
SC-70
D e1 e
£c
L
E1
E
L1 b 0.20 C A1
A2
A
S ymbol A A1 A2 b c D E E1 e e1 L L1 θ
Dimens ions In M illim et ers M in. M ax. 0 .900 1.100 0.000 0.900 0 .200 0 .080 2 .000 1 .150 2.150 0 .650T YP 1.200 0 .525RE F 0.260 0° 0.460 8°
7
Dimens ions In Inches M in. M ax. 0.035 0.043 0.000 0.035 0.008 0.003 0.079 0.045 0.085 0.026T YP 0.047 0.021PE F 0.010 0° 0.018 8°
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0.100 1.000 0.400 0.150 2.200 1.350 2.450 1.400
0.004 0.039 0.016 0.006 0.087 0.053 0.096 0.055
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
APM1402S
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 2 5 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max.
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Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8
Note: All temperatures refer to topside of the package. Measured on the body surface.
APM1402S
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 178±1
B
C
J
T1
T2 2.8± 0.2 Ao
14.4 ± 0.4 13.0 + 0.2 1.15 ± 0.1 12. ±0.2 D D1 Po P1
W 8.0+ 0.3 - 0.1 Bo
P 4 ± 0.1 Ko
E 1.75± 0.1 t
SC-70
F
3.5 ± 0.05 1.55± 0.05 1.00 +0.25 4.0 ± 0.1 2.0 ± 0.05 2.4 ± 0.1 2.4± 0.1 1.19± 0.1 0.25±0.013
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM1402S
Cover Tape Dimensions
Application SC- 70 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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