APM2030NU

APM2030N N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description 1 2 3 G D S Applications • Power Management in Computer, Portable Equipment and Battery Powered Systems. Top View of TO-252 Ordering and Marking Information APM2030N Handling Code Temp. Range Package Code Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 °C Handling Code TR : Tape & Reel APM2030N U : APM2030N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±10 V Unit ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 1 www.anpec.com.tw APM2030N Absolute Maximum Ratings (Cont.) Symbol I * D (TA = 25°C unless otherwise noted) Rating 20 40 A Unit Parameter Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C IDM PD TJ TSTG RθjA 50 W 10 150 -55 to 150 50 °C °C °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics S y mbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a V SD a b (TA = 25°C unless otherwise noted) APM2030N Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250 µ A V DS =18V , V GS =0V V DS =V GS , IDS=250 µ A V GS = ± 10V , V DS =0V V GS =4.5V , IDS =6A V GS =2.5V , IDS =2A ISD =4A , V GS=0V V DS =10V , IDS = 5A V GS =4.5V , 20 1 0.5 35 38 0.6 9 3.6 1 17 1.5 ± 100 40 50 1.3 18 V µA V nA mΩ V Dynamic Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC V DD =10V , IDS =1A , V GEN =4.5V , R G =0.2 Ω V GS =0V 15 45 25 520 110 70 ns V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing 2 www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 APM2030N Typical Characteristics Output Characteristics 20 VGS=2.5,3,4,5,6,7,8,9,10V Transfer Characteristics 20 18 ID-Drain Current (A) 15 ID-Drain Current (A) 16 14 12 10 8 6 4 2 TJ=25°C TJ=-55°C TJ=125°C 10 2V 5 1.5V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.0500 0.0475 VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.0450 0.0425 0.0400 0.0375 0.0350 0.0325 0.0300 0.0275 VGS=4.5V VGS=2.5V -25 0 25 50 75 100 125 150 0.0250 0 1 2 3 4 5 6 7 8 9 10 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 3 www.anpec.com.tw APM2030N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.125 ID=6A On-Resistance vs. Junction Temperature 2.00 VGS=4.5V 1.75 ID=6A RDS(ON)-On-Resistance (Ω) 0.100 RDS(ON)-On-Resistance (Ω) (Normalized) 1 2 3 4 5 6 7 8 9 10 1.50 1.25 1.00 0.75 0.50 0.25 0.075 0.050 0.025 0.000 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 750 V DS =10V ID=5A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 8 625 Capacitance (pF) Ciss 500 375 250 Coss 6 4 2 125 0 Crss 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 4 www.anpec.com.tw APM2030N Typical Characteristics Source-Drain Diode Forward Voltage 20 10 250 Single Pulse Power IS-Source Current (A) 200 Power (W) TJ=150°C TJ=25°C 150 1 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1E-3 0.01 0.1 1 10 100 1000 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 5 www.anpec.com.tw APM2030N Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 APM2030N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 7 APM2030N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 8 www.anpec.com.tw APM2030N Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 9 www.anpec.com.tw