APM2055N

APM2055N N-Channel Enhancement Mode MOSFET Features • 20V/12A, RDS(ON)=55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V Pin Description • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages 1 2 3 1 2 3 G D S G D S Top View of TO-252 D Top View of SOT-223 Applications • • Switching Regulators Switching Converters G Ordering and Marking Information A P M 2 055 N H a n d lin g C o d e Tem p. R ange Package C ode S N-Channel MOSFET Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel AP M 2055N U : AP M 2055N XXXXX XXXXX - D a te C o d e AP M 2055N V : AP M 2055N XXXXX XXXXX - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 12 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 1 www.anpec.com.tw APM2055N Absolute Maximum Ratings (Cont.) Symbol Parameter T A=25°C PD Maximum Power Dissipation T A=100°C TJ T STG R θjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TO-252 SOT-223 TO-252 SOT-223 (TA = 25°C unless otherwise noted) Rating 50 3 10 1.2 150 -55 to 150 50 °C °C °C/W W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance (TA = 25°C unless otherwise noted) APM2055N Typ. Max. Test Condition VGS =0V, ID=250µ A VDS =16V, VGS=0V VDS =VGS, ID =250µA VGS =±16V, VDS =0V VGS =10V, ID=12A VGS =4.5V, ID=6A VGS =2.5V, ID=2A Min. 20 Unit V 1 µA V nA 0.7 0.9 1.5 ±100 55 75 140 0.7 70 90 160 1.3 V mΩ VSD Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Diode Forward Voltage IS=2A, VGS =0V Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDS =15V, VGS=4.5V, ID=1.5A 7 2.5 1.5 8.5 nC VDD=15V, ID=2A, VGS =10V, RG=6Ω 9.2 14 31 16 18.6 27 58 21 ns Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 2 www.anpec.com.tw APM2055N Typical Characteristics Output Characteristics 20 VGS=4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) VGS=3V 12 ID-Drain Current (A) 16 16 12 8 8 TJ=125°C 4 VGS=2V 4 TJ=25°C TJ=-55°C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.125 VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.100 VGS=4.5V 0.075 VGS=10V 0.050 0.025 0.000 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 3 www.anpec.com.tw APM2055N Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.200 ID=5A On-Resistance vs. Junction Temperature 2.25 VGS=4.5V 2.00 ID=5A RDS(ON)-On-Resistance (Ω) 0.175 0.150 0.125 0.100 0.075 0.050 0.025 RDS(ON)-On-Resistance (Ω) (Normalized) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 8 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 VDS=15V ID=1.5A Capacitance 600 500 Frequency=1MHz VGS-Gate-Source Voltage (V) 4 Capacitance (pF) 400 300 200 Ciss 3 2 1 Coss 100 0 Crss 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 4 www.anpec.com.tw APM2055N Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 10 250 Single Pulse Power IS-Source Current (A) 200 Power (W) 1.2 1.4 1.6 150 1 TJ=150°C TJ=25°C 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1E-3 0.01 0.1 1 10 100 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM Z thJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 5 www.anpec.com.tw APM2055N Package Information SOT-223( Reference JEDEC Registration SOT-223) D B1 A c a H E L K e e1 b A1 B Dim A A1 B B1 c D E e e1 H L K α β Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° Min. 0.06 0.02 0.11 0.01 0.25 0.13 Inches Max. 0.07 0.03 0.12 0.01 0.26 0.15 0.09 BSC 0.18 BSC 0.29 0.04 0.08 10° 13° 13° Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 6 www.anpec.com.tw APM2055N Package Information (Cont.) TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 7 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 APM2055N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 8 APM2055N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330±1 B 62±1.5 D 1.5+ 0.1 B 100 ± 2 D 1.5 +0.1 C 12.75± 0.15 D1 1.5+ 0.1 C 13 ± 0. 5 D1 1.5± 0.25 J 2 ± 0.6 Po T1 12.4 +0.2 P1 T2 2± 0.2 Ao W 12 ± 0.3 Bo 7.5± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.1± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 E 1.75± 0.1 t 0.3±0.05 SOT-223 F 5.5 ± 0.05 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 J 2 ± 0.5 Po 4.0 ± 0.1 9 Application A 330 ±3 T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T2 2.5± 0.5 Ao 6.8 ± 0.1 TO-252 F 7.5 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 www.anpec.com.tw APM2055N Cover Tape Dimensions Application SOT- 223 TO- 252 Carrier Width 12 16 Cover Tape Width 9.3 13.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Feb., 2003 10 www.anpec.com.tw