APM2055NUC-TU

APM2055NU N-Channel Enhancement Mode MOSFET Features • 20V/10A , RDS(ON)=55mΩ (typ.) @ VGS=10V RDS(ON)=75mΩ (typ.) @ VGS=4.5V RDS(ON)=140mΩ (typ.) @ VGS=2.5V Pin Description G D S • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 D Applications • G Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Ordering and Marking Information APM2055N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2055N U : APM2055N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 1 www.anpec.com.tw APM2055NU Absolute Maximum Ratings Symbol Parameter Rating 20 ±16 150 -55 to 150 TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 3.5 30 15 10* 6 50 20 2.5 W °C/W V °C °C A Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 30 15 2 1 2.5 1 50 30 15 2 1 1.6 0.6 75 W °C/W W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Note: * Current limited by bond wire. 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 2 www.anpec.com.tw APM2055NU Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) a (TA = 25°C unless otherwise noted) APM2055NU Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=6A VGS=2.5V, IDS=2A 20 1 30 0.6 0.9 55 75 140 1.5 ±100 70 90 160 V µA V nA mΩ Diode Characteristics VSD a Diode Forward Voltage ISD=2A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 0.7 1.3 V Ω pF Dynamic Characteristics b RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd Notes: Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time 2.5 380 120 75 5 13 16 3 8 23 24 5 ns Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 5.4 VDS=10V, VGS=4.5V, IDS=12A 1.4 1.7 7 nC Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 3 www.anpec.com.tw APM2055NU Typical Characteristics Power Dissipation 60 12 Drain Current 50 10 40 ID - Drain Current (A) o Ptot - Power (W) 8 30 6 20 4 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 2 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 o 0 0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 0.05 ID - Drain Current (A) Rd s(o n) Lim it 1ms 10ms 100ms 1s DC 10 0.1 0.02 0.01 1 Single Pulse 2 0.1 0.1 TC=25 C 1 10 60 o 0.01 1E-4 1E-3 Mounted on 1in pad o RθJA :50 C/W 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 4 www.anpec.com.tw APM2055NU Typical Characteristics (Cont.) Output Characteristics 30 VGS=5,6,7,8,9,10V Drain-Source On Resistance 200 180 VGS=2.5V RDS(ON) - On - Resistance (mΩ) 25 4V 160 140 120 100 80 60 40 20 VGS=10V VGS=4.5V ID - Drain Current (A) 20 15 3V 10 5 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 5 10 15 20 25 30 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 30 Gate Threshold Voltage 1.8 IDS =250µA 1.6 25 Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ID - Drain Current (A) 20 15 10 Tj=125 C Tj=-55 C o o 5 Tj=25 C o 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 5 www.anpec.com.tw APM2055NU Typical Characteristics (Cont.) Drain-Source On Resistance 2.2 2.0 VGS = 10V IDS = 12A Source-Drain Diode Forward 30 Normalized On Resistance 1.8 IS - Source Current (A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 RON@Tj=25 C: 55mΩ 50 75 100 125 150 o 10 Tj=150 C o Tj=25 C o 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 700 Frequency=1MHz 600 Gate Charge 10 VDS=15V 9 ID = 12A VGS - Gate-source Voltage (V) 20 8 7 6 5 4 3 2 1 C - Capacitance (pF) 500 400 300 200 Coss 100 Crss 0 Ciss 0 4 8 12 16 0 0 2 4 6 8 10 12 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 6 www.anpec.com.tw APM2055NU Package Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 D1 C A1 E1 Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032 7 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080 www.anpec.com.tw Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 APM2055NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 8 www.anpec.com.tw APM2055NU Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – Package Peak Reflow Temperature s P ackage Thickness Volume mm 3 Volume mm 3 < 350 ≥ 350 < 2.5 mm °C 240 +0/-5 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures P ackage Thickness Volume mm 3 Volume mm 3 Volume mm 3 < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 9 www.anpec.com.tw APM2055NU Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 10 www.anpec.com.tw