APM2070P

APM2070P P-Channel Enhancement Mode MOSFET Features • • • • -20V/-5A , RDS(ON)=78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description G D S Top View of TO-252 5 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. / , , Ordering and Marking Information APM 2070P L e a d F re e C o d e H a n dlin g C o d e Tem p. R ange P ackage C ode P-Channel MOSFET P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rg in a l D e v ic e X X X X X - D a te C o d e A P M 2070P U : A P M 2070P XXXXX Absolute Maximum Ratings Symbol VDSS VGSS ID  * (TA = 25°C unless otherwise noted) Rating -20 ±16 -5 -20 Unit V A Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed IDM ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM2070P Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG * RθJA (TA = 25°C unless otherwise noted) Rating Unit W °C °C °C/W Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C 50 10 150 -55 to 150 50 * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD = > = (TA = 25°C unless otherwise noted) APM2070P Typ. Max. Min. -20 -1 -0.7 -0.9 78 113 -0.7 17 4 5.2 13 36 45 37 504 147 118 pF 25 67 83 69 -1.5 ±100 102 150 -1.3 22 nC Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Test Condition Unit VGS=0V , IDS=-250µA VDS=-16V , VGS=0V VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V VGS=-10V , IDS=-5A VGS=-4.5V , IDS=-2.8A IS=-0.5A , VGS=0V VDS=-10V , IDS=-5A VGS=-4.5V VDD=-10V , IDS=-5A , VGEN=-4.5V , RG=6Ω V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance ns VGS=0V Output Capacitance VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2 www.anpec.com.tw APM2070P Typical Characteristics 20 Output Characteristics  20 Transfer Characteristics  -VGS= 5,6,7,8,9,10V -ID-Drain Current (A) -VGS=4V 12 -ID-Drain Current (A) 16 16 Tj=125 C Tj=25 C 8 Tj=-55 C 4 o o o 12 8 -VGS=3V 4 -VGS=2V 0 0 2 4 6 8 10  0 0 1 2 3 4 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75  On-Resistance vs. Drain Current 0.150  -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω)  1.50 1.25 1.00 0.135 0.120 0.105 0.090 0.075 0.060 0.045 0 4 8 12 16 20 -VGS=10V -VGS=4.5V 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C)  -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 3 www.anpec.com.tw  APM2070P Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.24  1.8 -ID= 5A On-Resistance vs. Junction Temperature  -VGS = 4.5V -IDS = 5A RDS(ON)-On-Resistance (Ω)  0.20 0.16 0.12 RDS(ON)-On-Resistance (Ω) (Normalized)  1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50  0.08 0.04 0.00 1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 150  -VGS - Gate-to-Source Voltage (V)  TJ - Junction Temperature (°C) Gate Charge 10 700 -VDS= 10 V -IDS= 5 A 600 Capacitance  Frequency=1MHz Ciss -VGS-Gate-Source Voltage (V) 8 Capacitance (pF) 480 360 240 120 6 4 Coss Crss 0 4 8 12 16 20 2  0 0 5 10 15 20 25 30 35 QG - Total-Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 4 www.anpec.com.tw   APM2070P Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 10  Single Pulse Power 200 160 120 80 40 0 1E-4  -IS-Source Current (A) Tj=150 C 1 o 0.1 0.0  Tj=25 C o Power (W) 0.4 0.8 1.2 1.6 1E-3 0.01 0.1 1 10 100 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance  1 Duty Cycle=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D= t1/t2 2.Per Unit Base=RthJA=50 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted o 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 5 www.anpec.com.tw   APM2070P Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 b e1 C A1 L Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 APM2070P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. 60 seconds 215~ 219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 7 APM2070P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 Bo D W F Ao D1 T2 Ko J A C B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 1.5± 0.25 J 2 ± 0.5 Po 4.0 ± 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T2 2.5± 0.5 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 8 www.anpec.com.tw APM2070P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 9 www.anpec.com.tw