APM2095PDC-TR

APM2095PD P-Channel Enhancement Mode MOSFET Features • -20V/-3A, RDS(ON)=75mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V Pin Description G D S • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-89 (3) S Applications • • Switching Regulators Switching Converters (1) G D (2) P-Channel MOSFET Ordering and Marking Information APM 2095P L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ackage C ode D : S O T -8 9 O p e r a tin g J u n c tio n T e m p . R a n g e C : - 5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e APM 2095P D: APM 2095 XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM2095PD Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V Rating -20 ±10 -3 -12 -1 150 -55 to 150 1.47 0.58 85 Unit V A A °C W °C/W Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2095PD Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=-250µA VDS=-12V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-3A VGS=-2.5V, IDS=-1.5A ISD=-0.5A , VGS=0V -20 -1 -30 -0.5 -0.7 75 100 -0.7 -1 ±100 100 130 -1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 11.5 VDS=-10V, VGS=-4.5V, IDS=-3A 1.7 1.8 15 nC Gate-Source Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 2 www.anpec.com.tw APM2095PD Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter b Test Condition APM2095PD Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω 12.5 1160 250 85 12 25 52 18 21 42 85 32 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM2095PD Typical Characteristics Power Dissipation 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o Drain Current 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 180 o Tj - Junction Temperature (°C) -ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature Safe Operation Area Normalized Transient Thermal Resistence 50 2 1 Thermal Transient Impedance Duty = 0.5 -ID - Drain Current (A) im it 10 on )L 0.2 0.1 Rd s( 300µs 0.1 0.02 0.01 0.05 1 1ms 10ms 100ms 1s 0.1 DC 0.01 Single Pulse 0.01 0.01 TA=25 C 0.1 1 10 100 o 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA : 85 C/W 2 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 4 www.anpec.com.tw APM2095PD Typical Characteristics (Cont.) Output Characteristics 12 VGS=-3,-4,-5,-6,-7,-8,-9,-10V 10 140 130 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 120 110 100 90 80 70 60 50 40 0 2 4 VGS=-2.5V -ID - Drain Current (A) 8 -2V 6 VGS=-4.5V 4 -1.5V 2 0 0 2 4 6 8 10 6 8 10 12 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 12 1.8 1.6 Gate Threshold Voltage IDS =-250µA Normalized Threshold Voltage 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 -ID - Drain Current (A) 8 6 4 Tj=125 C 2 Tj=25 C 0 0.0 o o Tj=-55 C o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 5 www.anpec.com.tw APM2095PD Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 1.8 VGS = -4.5V IDS = -3A Tj=150 C o Source-Drain Diode Forward 10 Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 RON@Tj=25 C: 75mΩ 50 75 100 125 150 0.1 0.0 0.2 o -IS - Source Current (A) Tj=25 C 1 o 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 2100 Frequency=1MHz 1800 5 VDS= -10V ID = -3A Gate Charge -VGS - Gate-source Voltage (V) 4 C - Capacitance (pF) 1500 1200 900 600 300 0 Coss Crss Ciss 3 2 1 0 4 8 12 16 20 0 0 3 6 9 12 15 -VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 6 www.anpec.com.tw APM2095PD Package Information SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62) D D1 a E H 1 2 3 L B1 B e e1 C A a D im A B B1 C D D1 e e1 E H L α M illim eters M in. 1.40 0.40 0.35 0.35 4.40 1.35 1.50 B SC 3.00 B SC 2.29 3.75 0.80 2.60 4.25 1.20 10 ° 0.090 0.148 0.031 M ax. 1.60 0.56 0.48 0.44 4.60 1.83 M in. 0.055 0.016 0.014 0.014 0.173 0.053 Inches M ax. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 B SC 0.102 0.167 0.047 10 ° Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 7 www.anpec.com.tw APM2095PD Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP R am p-up tp C ritical Zone T L to T P T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 8 www.anpec.com.tw APM2095PD Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability test program Test item S OLDERABILITY H OLT P CT T ST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 Description °C, 5 SEC 245 1000 Hrs Bias @125 °C 168 Hrs, 100 % RH, 121°C -65°C~150°C, 200 Cycles Carrier Tape & Reel Dimensions t P P1 D Po E F W Bo Ao Ko D1 Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw APM2095PD Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 178 ±1 B 70 ± 2 D 1.5± 0.1 C J T1 14 ± 2 P1 2.0 ± 0.1 T2 1.3 ± 0.3 Ao 4.8 ± 0.1 13.5 ± 0.15 3 ± 0.15 D1 1.5± 0.1 Po 4.0 ± 0.1 SOT-89 F 5.5 ± 0.05 W 12 + 0.3 12 - 0.1 Bo 4.5± 0.1 P 8 ± 0.1 Ko E 1.75± 0.1 t 1.80± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT-89 12 9.3 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 10 www.anpec.com.tw