APM2095PUC-TR

APM2095P P-Channel Enhancement Mode MOSFET Features • • • • -20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description G D S Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Top View of TO-252 Ordering and Marking Information APM 2095P H a n d lin g C o d e Tem p. R ange P ackage C ode P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 2095P U : A P M 2095P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM  Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -20 ±10 -3.6 -20 A V Unit Maximum Drain Current – Continuous Maximum Pulsed Drain Current (pulse width ≤ 300µs) ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 1 www.anpec.com.tw APM2095P Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation T C=25°C T C=100°C TJ T STG RθJA * (TA = 25°C unless otherwise noted) Rating 50 W 20 150 -55 to 150 50 2.5 °C °C/W Unit Maximum Junction Temperature Storage Temperature Range T hermal Resistance – Junction to Ambient T hermal Resistance – Junction to Case 2 RθJC *Mounted on 1in pad area of PCB. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) a a (TA = 25°C unless otherwise noted) APM2095P Typ. Max. Min. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V , IDS=-250µA VDS=-16V , VGS=0V VDS=VGS , IDS=-250µA VGS=±10V , VDS=0V VGS=-4.5V , IDS=-3.6A VGS=-2.5V , IDS=-2A ISD=-1A , VGS=0V VDS=-10V , IDS=-3.6A VGS=-4.5V -20 -1 -0.5 -0.7 70 100 -0.7 11 2 1.5 13 22 56 70 58 -1 ±100 95 125 -1.3 15 V µA V nA mΩ V VSD Diode Forward Voltage b Dynamic Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC VDD=-10V , IDS=-3.6A , VGEN=-4.5V , RG=6Ω VGS=0V VDS=-15V 36 45 37 550 170 120 ns pF Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing 2 www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 APM2095P Typical Characteristics Output Characteristics 20 20 Transfer Characteristics -ID-Drain Current (A) -VGS=3,4,5,6,7,8V 12 -ID-Drain Current (A) 16 16 12 8 -2V 8 Tj=125 C Tj=25 C o o 4 -1.5V 4 Tj=-55 C 1.5 2.0 2.5 3.0 3.5 o 0 0 2 4 6 8 10 0 0.0 0.5 1.0 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.8 1.6 IDS =250µA 0.16 On-Resistance vs. Drain Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (Normalized) 0.14 0.12 -VGS=2.5V 0.10 0.08 0.06 0.04 0.02 -VGS=4.5V 0 2 4 6 8 10 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 3 www.anpec.com.tw APM2095P Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.10 -ID= 3.6A On-Resistance vs. Junction Temperature 1.5 1.4 -VGS = 4.5V -IDS = 3.6A RDS(ON)-On-Resistance (Ω) RDS(ON)-On-Resistance (Normalized) 0.09 0.08 0.07 0.06 0.05 0.04 1.3 1.2 1.1 1.0 0.9 0.8 0.7 RON@Tj=25 C:70 mΩ -25 0 25 50 75 100 125 150 O 1 2 3 4 5 6 7 8 9 10 0.6 -50 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 1000 -VDS= 10 V 4 -ID= 3.5 A 800 Capacitance Frequency=1MHz -VGS-Gate-Source Voltage (V) 3 Capacitance (pF) 600 Ciss 2 400 1 200 Crss Coss 0 0 2 4 6 8 10 12 14 0 4 8 12 16 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 4 www.anpec.com.tw APM2095P Typical Characteristics Source-Drain Diode Forward Voltage 20 10 300 250 200 Tj=25 C 1 o Single Pulse Power Mounted on 1 in pad O TA=25 C 2 -IS-Source Current (A) Tj=150 C Power (W) 1.2 1.4 1.6 o 150 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1E-4 1E-3 0.01 0.1 1 10 100300 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE PDM t 1 t 2 0.01 1.Duty Cycle, D= t1/t2 o 2.Per Unit Base=RthJA=50 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 300 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 5 www.anpec.com.tw APM2095P Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 APM2095P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. 60 seconds 215~ 219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 7 APM2095P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 1.5± 0.25 J 2 ± 0.5 Po 4.0 ± 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T2 2.5± 0.5 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 8 www.anpec.com.tw APM2095P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Nov., 2003 9 www.anpec.com.tw