APM2103SG

APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • -20V/-2.5A RDS(ON)= 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V Pin Description • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET (7.8)D1 (5.6)D2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. (2)G1 (4)G2 (1)S1 (3)S2 P Channel MOSFET Ordering and Marking Information APM2103 Lead Free Code Handling Code Temp. Range Package Code Package Code SG : JSC70-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2103 : M2103 Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2103SG Absolute Maximum Ratings Symbol VDSS VGSS ID IS * * (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation TA =25°C TA =100°C VGS=-4.5V Rating -20 ±12 -2.5 -10 -1.3 150 -55 to 150 1.14 0.45 110 b Unit V A A °C W °C/W IDM * TJ TSTG PD * RθJA * Thermal Resistance-Junction to Ambient 2 Notes: *Surface Mounted on 1in pad area, t ≤ 5sec. Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) APM2103SG Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=250µA VDS=-16V, VGS=0V T J=85°C VDS= VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-2.5A RDS(ON) a -20 -1 -30 -0.5 -0.7 -1 ±10 88 120 160 -0.8 110 160 260 -1.3 V µA V µA Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A VGS=-1.8V, IDS=-1A mΩ VSD a Diode Forward Voltage b ISD=-1.3A, VGS=0V V Gate Charge Characteristics Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge 5.8 VDS=-10V, VGS=-4.5V, IDS=-2.5A 1.3 1.1 8 nC Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM2103SG Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM2103SG Min. Typ. Max. Unit Dynamic Characteristics Ciss Coss Crss td(ON) tr td(OFF) tf trr Qrr Notes: Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω 360 80 50 8 22 29 32 15 41 53 59 ns nc ns pF ISD=-2.5A dlSD/dt =100A/µs 14 6 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2103SG Typical Characteristics Power Dissipation 1.3 1.2 1.1 1.0 0.9 Drain Current 3.0 2.5 ID - Drain Current (A) Ptot - Power (W) 2.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 TA=25 C 20 40 60 80 100 120 140 160 o 1.5 1.0 0.5 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 o 0.0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 50 Thermal Transient Impedance 2 1 10 Normalized Effective Transient Duty = 0.5 ID - Drain Current (A) Rd s(o n) Lim it 300µs 1ms 0.2 0.1 1 10ms 100ms 1s DC o 0.1 0.05 0.02 0.01 2 0.1 Single Pulse 0.01 0.01 TA=25 C 0.1 1 10 100 0.01 1E-4 Mounted on 1in pad o RθJA : 110 C/W 1E-3 0.01 0.1 1 10 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM2103SG Typical Characteristics (Cont.) Output Characteristics 10 VGS= -3,-4, -5, -6, -7, -8, -9, -10V 9 8 -2.5V Drain-Source On Resistance 240 220 V = -1.8V GS RDS(ON) - On - Resistance (mΩ) 200 180 160 140 120 100 80 60 40 VGS= -4.5V VGS= -2.5V ID - Drain Current (A) 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -1.5V -2V 20 0 2 4 6 8 10 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance 180 ID= -2.5A 160 1.8 1.6 Gate Threshold Voltage IDS =-250µA RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 140 120 100 80 60 40 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 www.anpec.com.tw APM2103SG Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -2.5A Source-Drain Diode Forward 10 Normalized On Resistance 1.4 -IS - Source Current (A) Tj=150 C Tj=25 C o o 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 88mΩ 0 25 50 75 100 125 150 o 1 0.1 0.0 0.3 0.6 0.9 1.2 1.5 1.8 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 500 450 5.0 Gate Charge VDS= -10V IDS= -2.5A Frequency=1MHz 4.5 -VGS - Gate - Source Voltage (V) 400 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 C - Capacitance (nC) 350 300 250 200 150 100 50 Crss 0 0 4 8 12 Coss Ciss 16 20 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 6 www.anpec.com.tw APM2103SG Packaging Information A1 b e E1 0 E2 c D A2 A 01 Dim A A1 A2 b c D E E1 E2 e L Millimeters Min. 0.00 0.70 0.15 0.10 1.80 1.80 1.65 2.00 0.50 BSC 0.35 0 4° 0.55 8° 10° 0.014 0 4° Max. 1.10 0.10 1.00 0.30 0.20 2.20 2.40 1.85 2.40 Min. 0.000 0.028 0.006 0.004 0.071 0.071 0.065 0.079 L Inches Max. 0.043 0.004 0.039 0.012 0.008 0.087 0.094 0.073 0.094 0.020 BSC 0.022 8° 10° θ θ1 Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 E www.anpec.com.tw APM2103SG Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw