APM2301

APM2301 P-Channel Enhancement Mode MOSFET Features • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V Pin Description D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Top View of SOT-23 Ordering and Marking Information A P M 23 01 H andling C ode T em p. R an ge Package Code Package Code A : S O T -23 O peration Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel A P M 2301 A : M 01X X - D ate C ode Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -20 ±16 -2.8 -10 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM2301 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.25 0.5 150 -55 to 150 100 W °C °C °C/W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM2301 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=-250µA VDS=-16V , VGS=0V VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V VGS=-10V , IDS=-2.8A VGS=-4.5V , IDS=-2.5A ISD=-1.25A , VGS=0V VDS=-10V , IDS=-3A VGS=-4.5V VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=6Ω RL=6Ω VGS=0V 20 1 0.6 72 98 0.6 7.6 3.2 2 11 32 38 32 430 235 95 22 55 68 55 1.5 ±100 85 110 1.3 10 V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance nC ns Output Capacitance VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 2 www.anpec.com.tw APM2301 Typical Characteristics Output Characteristics 10 -VGS=3.5,4,4.5,5V Transfer Characteristics 10 8 -ID-Drain Current (A) 6 -V GS=3V -ID-Drain Current (A) 8 6 4 -VGS=2.5V 4 TJ=25°C TJ=-55°C 2 -V GS=2V 2 TJ=125°C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS =250uA On-Resistance vs. Drain Current 0.150 -VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.135 0.120 0.105 0.090 0.075 0.060 0.045 0.030 0 2 4 6 8 10 -VGS=10V -VGS=4.5V -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 3 www.anpec.com.tw APM2301 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.30 -ID=2.8A On-Resistance vs. Junction Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -VGS=10V -ID=2.8A RDS(ON)-On-Resistance (Ω) 0.25 0.20 0.15 0.10 0.05 0.00 RDS(ON)-On-Resistance (Ω) (Normalized) 1 2 3 4 5 6 7 8 9 10 0.2 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 -V DS =10V -ID=3A Capacitance 750 625 -VGS-Gate-Source Voltage (V) 8 Capacitance (pF) 500 375 250 125 0 Ciss 6 4 2 Coss Crss 0 0 3 6 9 12 15 0 5 10 15 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 4 www.anpec.com.tw APM2301 Typical Characteristics Source-Drain Diode Forward Voltage 10 14 12 Single Pulse Power -IS-Source Current (A) 10 Power (W) 1.4 1.6 8 6 4 2 TJ=150°C TJ=25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 0.1 1 10 100 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.01 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 5 www.anpec.com.tw APM2301 Packaging Information SOT-23 D B 3 E 1 2 H S e A A1 L C Dim A A1 B C D E e H L M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55 Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 11 8 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 6 www.anpec.com.tw APM2301 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. 60 seconds 215~ 219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 7 APM2301 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 178±1 B 72 ± 1.0 D 1.5 +0.1 C J T1 8.4 ± 2 P1 T2 1.5± 0.3 Ao 13.0 + 0.2 2.5 ± 0.15 D1 1.5 +0.1 Po 4.0 ± 0.1 W 8.0+ 0.3 - 0.3 Bo 3.2± 0.1 P 4 ± 0.1 Ko 1.4± 0.1 E 1.75± 0.1 t 0.2±0.03 SOT-23 F 3.5 ± 0.05 2.0 ± 0.1 3.15 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 8 www.anpec.com.tw APM2301 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 9 www.anpec.com.tw