APM2301CAC-TRL

APM2301CA P-Channel Enhancement Mode MOSFET Features • -20V/-2.8A RDS(ON)= 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 106mΩ (typ.) @ VGS= -1.8V Pin Description • • Super High Dense Cell Design Reliable and Rugged SOT-23 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. G S P Channel MOSFET Ordering and Marking Information APM2301CA Lead Free Code Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2301CA: C01X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2301CA Absolute Maximum Ratings Symbol VDSS VGSS ID IS * * (TA = 25°C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation TA =25°C TA =100°C VGS=-4.5V Rating -20 ±12 -2.8 -12 -1.3 150 -55 to 150 0.83 0.3 150 b Unit V A A °C W °C/W IDM * TJ TSTG PD * RθJA * Thermal Resistance-Junction to Ambient 2 Notes: *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Condition APM2301CA Min. -20 -1 -30 -0.5 -0.75 -1 ±10 56 85 106 -0.75 7 70 115 165 -1.3 10 Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=250µA VDS=-16V, VGS=0V TJ=85°C VDS= VGS, IDS=-250µA VGS=±12V, VDS=0V VGS=-4.5V, IDS=-2.8A RDS(ON) a V µA V µA Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A VGS=-1.8V, IDS=-1A mΩ VSD a Diode Forward Voltage b ISD=-1.3A, VGS=0V V Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-2.8A 1.9 1.9 nC Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM2301CA Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C Unless Otherwise Noted) Test Condition APM2301CA Min. Typ. Max. Unit Dynamic Characteristics Ciss Coss Crss td(ON) tr td(OFF) tf trr Qrr Notes: Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω 580 100 75 4 13 35 20 7 23 63 36 ns nC ns pF ISD=-2.8A, dlSD/dt =100A/µs 20 7 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2301CA Typical Characteristics Power Dissipation 1.0 0.9 0.8 0.7 Drain Current 3.0 2.5 -ID - Drain Current (A) o Ptot - Power (W) 2.0 0.6 0.5 0.4 0.3 0.2 1.5 1.0 0.5 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0.0 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 50 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 10 n) s(o Rd it Lim 300µs 1ms Normalized Effective Transient -ID - Drain Current (A) 0.1 0.05 0.02 0.01 1 10ms 100ms 1s DC TA=25 C o 0.1 0.01 Single Pulse 0.01 0.01 0.1 1 10 100 1E-3 1E-4 Mounted on 1in pad o RθJA : 150 C/W 2 1E-3 0.01 0.1 1 10 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM2301CA Typical Characteristics (Cont.) Output Characteristics 12 VGS= -3,-4, -5, -6, -7, -8, -9, -10V 160 180 Drain-Source On Resistance -2.5V RDS(ON) - On - Resistance (mΩ) 10 VGS= -1.8V 140 120 100 80 60 40 20 VGS= -4.5V VGS= -2.5V -ID - Drain Current (A) 8 6 -2V 4 2 -1.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance 100 ID= -2.8A 90 80 70 60 50 40 30 Gate Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 IDS= -250µA RDS(ON) - On - Resistance (mΩ) 1 2 3 4 5 6 7 8 9 10 Normalized Threshold Voltage 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 www.anpec.com.tw APM2301CA Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = -4.5V 1.8 IDS = -2.8A Source-Drain Diode Forward 10 Normalized On Resistance 1.6 -IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 56mΩ 0 25 50 75 100 125 150 o Tj=150 C Tj=25 C o o 1 0.1 0.0 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 800 700 4.5 Gate Charge VDS= -10V 4.0 IDS= -2.8A Frequency=1MHz -VGS - Gate - Source Voltage (V) 600 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Ciss C - Capacitance (nC) 500 400 300 200 100 Crss 0 0 4 8 Coss 12 16 20 0 1 2 3 4 5 6 7 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 6 www.anpec.com.tw APM2301CA Packaging Information SOT-23 D B 3 E 1 2 H S e1 e A A1 L C Dim Min. A A1 B C D E e1 H L 2.40 0.37 1.00 0.00 0.35 0.10 2.70 1.40 Parameter Max. 1.30 0.10 0.51 0.25 3.10 1.80 1.90 TYP 3.00 0.094 0.015 Min. 0.039 0.000 0.014 0.004 0.106 0.055 Inches Max. 0.051 0.004 0.020 0.010 0.122 0.071 0.075 TYP 0.118 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM2301CA Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone TL to TP Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25° to Peak C Time Reflow Condition Profile Feature Average ramp-up rate(TL to TP) Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (min to max) (ts) Tsmax to TL -Ramp-up Rate Time maintained above: -Temperature (TL) -Time (tL) Peak Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Time 25°C to Peak Temperature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 100°C 150°C 60-120 seconds 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 183°C 60-150 seconds 225 +0/-5°C 10-30 seconds 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 240 +0/-5°C 10-30 seconds 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max. 6°C/second max. 6 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw APM2301CA Reflow Condition pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0°C VPR 215-219°C IR/Convection 220 +5/-0°C pkg. thickness < 2.5mm and 3 pkg. volume ≥ 350mm pkg. thickness < 2.5mm and 3 pkg. volume < 350mm Convection 235 +5/-0°C VPR 235 +5/-0°C IR/Convection 220 +5/-0°C Reliability test program Test Item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM2301CA Carrier Tape & Reel Dimensions (Cont.) Application A 178±1 SOT-23 F 3.5±0.05 B 60±1.0 D 1.5±0.1 C 12.0 D1 ϕ0.1MIN J 2.5±0.15 Po 4.0 T1 9.0±0.5 P1 2.0±0.05 T2 1.4 Ao 3.1 W 8.0±0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.2±0.03 Cover Tape Dimensions Application SOT-23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw