APM2306

APM2306 N-Channel Enhancement Mode MOSFET Features • • • • 30V/3.5A, RDS(ON)=70mΩ(typ.) @ VGS=5V RDS(ON)=42mΩ(typ.) @ VGS=10V Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package Pin Description D 3 1 2 Applications • • Switching Regulators Switching Converters G S Top View of SOT-23 Ordering and Marking Information A P M 23 06 H andling C ode T em p. R an ge Package Code Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel A P M 2306 A : M 06X X - D ate C ode Absolute Maximum Ratings Symbol VDSS VGSS ID IDM PD TJ TSTG Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 3.5 16 TA=25°C TA=100°C 1.25 0.5 150 -55 to 150 Unit V A W W °C °C Maximum Pulsed Drain Current ( pulse width ≤ 300µs) Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw APM2306 Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0V VDS =15V Frequency=1.0MHz VDD=15V,ID=1A, VGS =10V, RG=6Ω VDS =15V, VGS=5V, ID=3.5A 12.5 3.7 2.4 10 8 19 6.2 410 80 45 nC nC nC ns ns ns ns pF pF pF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS =0V, IDS=250µ A VDS =24V, VGS=0V VDS =VGS, IDS=250µ A VGS =±20V, VDS=0V VGS =5V, IDS=2.8A VGS =10V, IDS=3.5A ISD=1.25A, VGS=0V 70 42 1.1 1 1.5 ±100 90 65 1.5 mΩ V 30 1 V µA V nA Parameter (TA= 25°C unless otherwise noted) APM2306 Typ. Max. Test Condition Min. Unit Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 2 www.anpec.com.tw APM2306 Typical Characteristics Output Characteristics 12 VGS=5,6,7,8,9,10V Transfer Characteristics 16 TJ=-55°C 10 ID-Drain Current (A) ID-Drain Current (A) 12 TJ=25°C 8 6 4 2 V GS=3V V GS=4V 8 TJ=125°C 4 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Temperature 2.25 IDS=250µΑ On-Resistance vs. Drain Current 120 RDS(on)-On-Resistance (mΩ) VGS(th)-Threshold Voltage (V) 2.00 100 80 60 VGS=10V V GS=5V 1.75 1.50 40 20 0 0 2 4 6 8 10 1.25 1.00 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 3 www.anpec.com.tw APM2306 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 120 On-Resistance vs. Junction Temperature 70 RDS(on)-On-Resistance (mΩ) RDS(on)-On Resistance (mΩ) V GS=10V ID=3.5A 100 80 ID=3.5A 60 50 40 30 20 10 -50 60 40 20 0 2 4 6 8 10 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 750 V D=15V ID=3.5A Capacitance VGS-Gate-Source Voltage (V) 8 625 Capacitance (pF) 500 Ciss 375 250 125 0 0 5 10 15 20 25 30 6 4 2 Coss Crss 0 0 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 4 www.anpec.com.tw APM2306 Typical Characteristics Source-Drain Diode Forward Voltage 30 Single Pulse Power 14 12 IS-Source Current (A) Power (W) TJ=150°C TJ=25°C 10 10 8 6 4 2 0 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 SINGLE PULSE 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 5 www.anpec.com.tw APM2306 Packaging Information SOT-23 D B 3 E 1 2 H S e A A1 L C Dim A A1 B C D E e H L M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55 Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 11 8 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 6 www.anpec.com.tw APM2306 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 7 APM2306 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 178±1 B 72 ± 1.0 D 1.5 +0.1 C J T1 8.4 ± 2 P1 T2 1.5± 0.3 Ao 13.0 + 0.2 2.5 ± 0.15 D1 1.5 +0.1 Po 4.0 ± 0.1 W 8.0+ 0.3 - 0.3 Bo 3.2± 0.1 P 4 ± 0.1 Ko 1.4± 0.1 E 1.75± 0.1 t 0.2±0.03 SOT-23 F 3.5 ± 0.05 2.0 ± 0.1 3.15 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 8 www.anpec.com.tw APM2306 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 9 www.anpec.com.tw