APM2312

APM2312 N-Channel Enhancement Mode MOSFET Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V Pin Description D 3 RDS(ON)=45mΩ(typ.) @ VGS=2.5V  RDS(ON)=60mΩ(typ.) @ VGS=1.8V • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G S 1 2 SOT-23 Package Top View of SOT-23 D Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information APM2312 Handling Code Temp. Range Package Code S N-Channel MOSFET Package Code A : SOT-23 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM2312 A : M12X X - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 16 ±8 5 15 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM2312 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.25 W 0.5 150 -55 to 150 100 °C °C °C/W Unit Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON)a V SDa b (TA = 25°C unless otherwise noted) APM2312 Min. Ty p. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250 µ A V DS =16V , VGS =0V V DS =V GS , IDS=250 µ A V GS = ± 8V , VDS=0V V GS =4.5V , IDS =5A V GS =2.5V , IDS =4.5A V GS =1.8V , IDS =4A ISD=1.7A , VGS =0V V DS =10V , IDS = 1A V GS =4.5V , 16 1 0.5 0.7 35 45 60 0.7 10 1.9 1.8 17 33 70 80 45 1 ± 100 45 55 70 1.3 12 V µA V nA mΩ V Dynamic Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC V DD=10V , IDS =1A , V GEN =4.5V , R G =0.2 Ω V GS =0V 40 45 25 580 170 100 ns V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 2 www.anpec.com.tw APM2312 Typical Characteristics Output Characteristics 12 10 VGS=2,3,4,5,6,7,8,9,10V Transfer Characteristics 12 10 ID-Drain Current (A) 8 6 4 2 VGS=1V ID-Drain Current (A) 8 6 4 2 0 0.0 TJ=125°C TJ=25°C TJ=-55°C VGS=1.5V 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 IDS=250uA On-Resistance vs. Drain Current 0.08 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 3 6 9 12 VGS=2.5V VGS=4.5V -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 3 www.anpec.com.tw APM2312 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.10 ID=5A On-Resistance vs. Junction Temperature 2.25 VGS=4.5V ID=5A RDS(ON)-On-Resistance (Ω) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 2 3 4 5 6 7 8 RDS(ON)-On-Resistance (Ω) (Normalized) 0.09 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 1000 VDS=10V ID=1A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 4 800 Capacitance (pF) 3 600 Ciss 2 400 Coss Crss 1 200 0 0 2 4 6 8 10 12 0 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 4 www.anpec.com.tw APM2312 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 12 10 10 8 6 4 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 Single Pulse Power IS-Source Current (A) TJ=150°C TJ=25°C Power (W) 0.1 1 10 100 600 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.T JM-T A=P DMZ thJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 600 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 5 www.anpec.com.tw APM2312 Packaging Information SOT-23 D B 3 E 1 2 H S e A A1 L C Dim A A1 B C D E e H L M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55 Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 118 Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 6 www.anpec.com.tw APM2312 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 7 APM2312 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 178±1 B 60 ± 1.0 D 1.5 +0.1 C 12.0 D1 F0.1MIN J T1 T2 1.4 Ao 3.1 2.5 ± 0.15 9.0 ± 0.5 Po 4.0 P1 2.0 ± 0.05 W 8.0+ 0.3 - 0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.2±0.03 (mm) SOT-23 F 3.5 ± 0.05 Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 8 www.anpec.com.tw APM2312 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - July., 2003 9 www.anpec.com.tw