APM2315AC-TU

APM2315A P-Channel Enhancement Mode MOSFET Features • -20V/-4A, RDS(ON)=35mΩ (typ.) @ VGS=-4.5V RDS(ON)=45mΩ (typ.) @ VGS=-2.5V RDS(ON)=60mΩ (typ.) @ VGS=-1.8V Pin Description • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 S Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D G P-Channel MOSFET Ordering and Marking Information APM2315 Lead Free Code Handling Code Temp. Range Package Code APM2315 A : M15X Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device X - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 1 www.anpec.com.tw APM2315A Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V Rating -20 ±12 -4 -16 -1.5 150 -55 to 150 0.83 0.3 150 Unit V A A °C W °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition APM2315A Min. T yp. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, I DS=-250 µA VDS=-16V, VGS=0V T J=85°C VDS=VGS , IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, I DS =-4A -20 -1 - 30 -0.5 -0.7 35 45 60 -0.75 -1 ±100 55 72 100 -1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=-2.5V, I DS =-2.5A VGS=-1.8V, I DS =-2A ISD =-0.5A, VGS =0V Diode Forward Voltage Gate Charge Characteristics b Qg Total Gate Charge Q gs Q gd Gate-Source Charge Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-4A 12 2.1 2.9 16 nC Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 2 www.anpec.com.tw APM2315A Electrical Characteristics (Cont.) (T A = 25°C unless otherwise noted) Symbol Parameter Test Condition APM2315A Min. Typ. Max. Unit Dynamic Characteristics b RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz 8 1135 200 110 6 12 14 131 82 7 72 45 Ω pF VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω ns Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 3 www.anpec.com.tw APM2315A Typical Characteristics Power Dissipation 1.0 0.9 0.8 0.7 5.0 4.5 4.0 Drain Current -ID - Drain Current (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 o Ptot - Power (W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 0.0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 30 10 Rd s(o n) Lim it Thermal Transient Impedance 2 1 Duty = 0.5 -ID - Drain Current (A) 300µs 1ms 0.2 0.1 1 10ms 0.1 0.05 0.02 0.01 100ms 0.1 1s DC 0.01 Single Pulse Mounted on 1in pad o RθJA : 150 C/W 2 T =25 C 0.01 A 0.01 0.1 o 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 4 www.anpec.com.tw APM2315A Typical Characteristics (Cont.) Output Characteristics 16 VGS= -3,-4,-5,-6,-7,-8,-9,-10V 14 12 -2V 140 160 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 120 100 80 60 40 20 0 -ID - Drain Current (A) VGS= -1.8V 10 8 6 4 2 0 0.0 VGS= -2.5V VGS= -4.5V -1.5V 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 16 14 1.8 Gate Threshold Voltage IDS = -250µA 1.6 Normalized Threshold Voltage 12 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 -ID - Drain Current (A) 10 8 6 4 Tj=25 C 2 0 0.0 o Tj=125 C o o Tj=-55 C 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 5 www.anpec.com.tw APM2315A Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -4A Source-Drain Diode Forward 20 10 o Normalized On Resistance Tj=150 C 1.2 1.0 0.8 0.6 RON@Tj=25 C: 35m Ω 0.4 -50 -25 0 25 50 75 100 125 150 o -IS - Source Current (A) 1.4 Tj=25 C 1 o 0.1 0.0 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 1800 Frequency=1MHz 1600 10 VDS= -10V 9 I = -4A D Gate Charge -VGS - Gate - source Voltage (V) 1400 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 C - Capacitance (pF) 1200 1000 800 600 400 Coss 200 Crss 0 0 4 8 12 Ciss 16 20 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 6 www.anpec.com.tw APM2315A Packaging Information SOT-23 D B 3 E 1 2 H e A A1 L C Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 1.90/2.1 BSC. 2.40 0.37 3.00 Max. 1.30 0.10 0.51 0.25 3.10 1.80 Inches Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 7 www.anpec.com.tw APM2315A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 8 www.anpec.com.tw APM2315A Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – Package Peak Reflow Temperature s P ackage Thickness Volume mm 3 Volume mm 3 < 350 ≥ 350 < 2.5 mm °C 240 +0/-5 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures P ackage Thickness Volume mm 3 Volume mm 3 Volume mm 3 < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 9 www.anpec.com.tw APM2315A Carrier Tape & Reel Dimensions T2 J C A B T1 Application A 178±1 B 60 ± 1.0 D 1.5 +0.1 C 12.0 D1 φ0.1MIN J T1 T2 1.4 Ao 3.1 2.5 ± 0.15 9.0 ± 0.5 Po 4.0 P1 2.0 ± 0.05 W 8.0+ 0.3 - 0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.2±0.03 (mm) SOT-23 F 3.5 ± 0.05 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 10 www.anpec.com.tw