APM2317AC-TR

APM2317A P-Channel Enhancement Mode MOSFET Features • -20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V Pin Description • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 S Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D G P-Channel MOSFET Ordering and Marking Information APM2317 Lead Free Code Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2317A : M17X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 1 www.anpec.com.tw APM2317A Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in2 pad area, t (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V Rating -20 ±12 -4.5 -18 -1 150 -55 to 150 0.83 0.3 150 Unit V A A °C W °C/W ≤ 10sec. (TA = 25°C unless otherwise noted) Electrical Characteristics Symbol Parameter Test Condition APM2317A Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) VSD a a -20 -1 -30 -0.5 -0.7 -1 ±100 28 38 55 -0.7 14 35 50 75 -1.3 20 V µA V nA Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±12V, VDS=0V VGS=-4.5V, IDS=-4.5A VGS=-2.5V, IDS=-2.5A VGS=-1.8V, IDS=-2A ISD=-1A, VGS=0V mΩ V Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge Gate-Source Charge VDS=-10V, VGS=-4.5V, IDS=-4.5A 2.1 4.7 nC Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 2 www.anpec.com.tw APM2317A Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM2317A Min. Typ. Max. Test Condition Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf trr qrr Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω 7 1520 225 165 6 13 86 42 21 9 12 24 156 77 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge ns ISD=-4.5A, dlSD/dt =100A/µs ns nC a : Pulse test ; pulse width≤300 µs, duty cycle ≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 3 www.anpec.com.tw APM2317A Typical Characteristics Power Dissipation 1.0 0.9 0.8 5.0 4.5 4.0 Drain Current -ID - Drain Current (A) 0.7 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TA=25 C,VG=-4.5V 0 20 40 60 80 100 120 140 160 o Ptot - Power (W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 0.0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 50 Thermal Transient Impedance 2 Normalized Transient Thermal Resistance 1 Duty = 0.5 0.2 0.1 -ID - Drain Current (A) Rd s(o n) Lim it 10 300µs 1ms 0.1 0.05 0.02 0.01 1 10ms 0.1 100ms 1s DC 0.01 Single Pulse T =25 C 0.01 A 0.01 0.1 o 1 10 100 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA : 150 C/W 2 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 4 www.anpec.com.tw APM2317A Typical Characteristics (Cont.) Output Characteristics 18 16 14 VGS= -3, -4, -5, -6, -7, -8, -9, -10V 100 90 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) -2V 80 70 60 50 40 30 20 10 0 VGS=1.8V -ID - Drain Current (A) 12 10 8 6 4 2 0 0.0 -1.5V VGS=2.5V VGS=4.5V 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance 80 ID= -4.5A 70 Gate Threshold Voltage 1.8 IDS = -250µA 1.6 RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage 0 1 2 3 4 5 6 7 8 9 10 60 50 40 30 20 10 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 5 www.anpec.com.tw APM2317A Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -4.5A Source-Drain Diode Forward 20 10 Tj=150 C o Normalized On Resistance 1.2 1.0 0.8 0.6 RON@Tj=25 C: 28mΩ 0.4 -50 -25 0 25 50 75 100 125 150 o -IS - Source Current (A) 1.4 Tj=25 C 1 o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 2100 1800 Frequency=1MHz Gate Charge 5.0 4.5 VDS= -10V ID = -4.5A -VGS - Gate-source Voltage (V) 20 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 C - Capacitance (pF) 1500 1200 900 600 300 Crss 0 0 4 8 12 Ciss Coss 16 0.0 0 2 4 6 8 10 12 14 16 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 6 www.anpec.com.tw APM2317A Packaging Information SOT-23 D B 3 E 1 2 H e A A1 L C Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 1.90/2.1 BSC. 2.40 0.37 3.00 Max. 1.30 0.10 0.51 0.25 3.10 1.80 Min. 0.039 0.000 0.014 0.004 0.106 0.055 Inches Max. 0.051 0.004 0.020 0.010 0.122 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 7 www.anpec.com.tw APM2317A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 8 www.anpec.com.tw APM2317A Classification Reflow Profiles (Cont.) T able 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 P ackage Thickness Volume mm Volume mm < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volum e m m Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2.5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 9 www.anpec.com.tw APM2317A Carrier Tape & Reel Dimensions T2 J C A B T1 Application A 178±1 B 60 ± 1.0 D 1.5 +0.1 C 12.0 D1 φ0.1MIN J T1 T2 1.4 Ao 3.1 2.5 ± 0.15 9.0 ± 0.5 Po 4.0 P1 2.0 ± 0.05 W 8.0+ 0.3 - 0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.2±0.03 (mm) SOT-23 F 3.5 ± 0.05 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.1 - May., 2006 10 www.anpec.com.tw