APM2322

APM2322 N-Channel Enhancement Mode MOSFET Features • • • • 20V/1.5A , RDS(ON)=195mΩ(typ.) @ VGS=4.5V RDS(ON)=295mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package Pin Description D G D S Top View of SOT-23 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G S N-Channel MOSFET Ordering and Marking Information A P M 23 22 H andling C ode T em p. R an ge Package Code Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel A P M 2322 A : M 22X X - D ate C ode Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25°C unless otherwise noted) Rating 20 ±8 1.5 5.6 A V Unit Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed(Pulse width ≤ 300µs) IDM * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 1 www.anpec.com.tw APM2322 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG * RθJA (TA = 25°C unless otherwise noted) Rating 0.8 W 0.3 150 -55 to 150 150 °C °C °C/W Unit Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Dynamic Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss b (TA = 25°C unless otherwise noted) APM2322 Typ. Max. Min. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance VGS=0V , IDS=250µA VDS=16V , VGS=0V VDS=VGS , IDS=250µA VGS=±8V , VDS=0V VGS=4.5V , IDS=1.5A VGS=2.5V , IDS=0.8A ISD=0.5A , VGS=0V VDS=10V , IDS= 1.5A VGS=4.5V VDD=10V , IDS=1.5A, VGEN=4.5V , RG=6Ω 20 1 0.6 0.75 195 295 0.8 1.4 0.22 0.33 6 5 12 6 152 48 32 15 11 24 15 1.5 ±10 260 350 1.3 1.8 V µA V µA mΩ V nC ns VGS=0V VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 2 www.anpec.com.tw APM2322 Typical Characteristics Output Characteristics 6 5 Transfer Characteristics 6 5 ID-Drain Current (A) ID-Drain Current (A) VGS=3,4,5,6,7,8,9,10V 4 3 2 VGS=2V 4 3 2 1 0 Tj=-55 C o o Tj=125 C 1 0 Tj=25 C o 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.4 IDS=250µA On-Resistance vs. Drain Current 0.36 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.2 0.32 0.28 0.24 VGS=2.5V 1.0 0.8 VGS=4.5V 0.20 0.16 0.12 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 3 www.anpec.com.tw APM2322 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.40 IDs=1.5A On-Resistance vs. Junction Temperature 1.75 VGS=4.5V IDs=1.5A RDS(ON)-On-Resistance (Ω) RDS(ON)-On-Resistance (Normalized) 0.35 0.30 0.25 0.20 0.15 0.10 1.50 1.25 1.00 0.75 RON@Tj=25°C :195mΩ 1 2 3 4 5 6 7 8 0.50 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 200 VDS=10 V 4 IDS= 1.5A 160 Capacitance Frequency=1MHz Ciss VGS-Gate-Source Voltage (V) 3 Capacitance (pF) 120 2 80 Coss 1 40 Crss 0 0.0 0.3 0.6 0.9 1.2 1.5 0 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 4 www.anpec.com.tw APM2322 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 6 14 Single Pulse Power TA=25°C 12 IS-Source Current (A) 1 10 Power (W) 1.2 1.6 TJ=150°C TJ=25°C 8 6 4 2 0.1 0.01 0.0 0.4 0.8 0 0.01 0.1 1 10 100 500 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=150°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 500 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 5 www.anpec.com.tw APM2322 Packaging Information SOT-23 D B 3 E 1 2 H S e A A1 L C Dim A A1 B C D E e H L M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55 Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 11 8 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 6 www.anpec.com.tw APM2322 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw 7 APM2322 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 178±1 B 72 ± 1.0 D 1.5 +0.1 C J T1 8.4 ± 2 P1 T2 1.5± 0.3 Ao 13.0 + 0.2 2.5 ± 0.15 D1 1.5 +0.1 Po 4.0 ± 0.1 W 8.0+ 0.3 - 0.3 Bo 3.2± 0.1 P 4 ± 0.1 Ko 1.4± 0.1 E 1.75± 0.1 t 0.2±0.03 SOT-23 F 3.5 ± 0.05 2.0 ± 0.1 3.15 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 8 www.anpec.com.tw APM2322 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 9 www.anpec.com.tw