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APM2323A

APM2323A

  • 厂商:

    ANPEC(茂达电子)

  • 封装:

  • 描述:

    APM2323A - P-Channel Enhancement Mode MOSFET - Anpec Electronics Coropration

  • 数据手册
  • 价格&库存
APM2323A 数据手册
APM2323A P-Channel Enhancement Mode MOSFET Features • -20V/-1.5A , RDS(ON)=130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Pin Description D • • • G S Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 S Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D G P-Channel MOSFET Ordering and Marking Information APM2323 Lead Free Code Handling Code Tem p. Range Package Code Package Code A : SOT-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code APM2323A : M23X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM2323A Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in2 pad area, t (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V Rating -20 ±10 -1.5 -6 -1 150 -55 to 150 0.83 0.3 150 Unit V A A °C W °C/W ≤ 10sec. (TA = 25°C unless otherwise noted) APM2323A Min. Typ. Max. Electrical Characteristics Symbol Parameter Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) VSD a a -20 -1 -30 -0.45 -0.7 130 170 -0.7 4 -1 ±100 170 220 -1.3 6 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-1.5A VGS=-2.5V, IDS=-1A ISD=-1A, VGS=0V Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge Gate-Source Charge VDS=-10V, VGS=-4.5V, IDS=-1.5A 0.6 0.7 nC Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 www.anpec.com.tw APM2323A Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM2323A Min. Typ. Max. Test Condition Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-20V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω 12 255 70 45 6 8 9.8 5 10 12 15 10 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM2323A Typical Characteristics Power Dissipation 1.0 2.0 Drain Current 0.8 1.6 0.6 -ID - Drain Current (A) Ptot - Power (W) 1.2 0.4 0.8 0.2 o 0.4 TA=25 C, VG=4.5V 60 80 100 120 140 160 0.0 0 20 40 60 80 100 120 140 160 o 0.0 TA=25 C 0 20 40 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 20 10 2 Thermal Transient Impedance Normalized Transient Thermal Resistance 1 Duty = 0.5 -ID - Drain Current (A) Rd s( on )L im it 300µs 1ms 10ms 100ms 1s DC 1 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 150 C/W 2 0.1 TA=25 C 0.01 0.01 0.1 o 1 10 100 0.01 1E-4 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 4 www.anpec.com.tw APM2323A Typical Characteristics (Cont.) Output Characteristics 8 VGS= -3,-4,-5,-6,-7,-8,-9,-10V 7 0.25 0.30 Drain-Source On Resistance 6 RDS(ON) - On - Resistance (Ω) -ID - Drain Current (A) 0.20 VGS= -2.5V 5 4 3 2 1 0 0.0 -2V 0.15 VGS= -4.5V 0.10 0.05 0.00 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 6 1.8 1.6 Tj=-55 C o Gate Threshold Voltage IDS = -250µA Normalized Threshold Voltage 5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -ID - Drain Current (A) 4 Tj=25 C Tj=125 C o o 3 2 1 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.0 -50 -25 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 5 www.anpec.com.tw APM2323A Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -1.5A Tj=150 C o Source-Drain Diode Forward 6 Normalized On Resistance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 135mΩ 0 25 50 75 100 125 150 o -IS - Source Current (A) 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 500 Frequency=1MHz 5 VDS=-10 V IDS=-1.5 A Gate Charge -VGS - Gate-source Voltage (V) 20 400 4 C - Capacitance (pF) 300 Ciss 200 3 2 100 Crss 0 Coss 1 0 4 8 12 16 0 0 1 2 3 4 5 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 6 www.anpec.com.tw APM2323A Packaging Information SOT-23 D B 3 E 1 2 H e A A1 L C Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 1.90/2.1 BSC. 2.40 0.37 3.00 Max. 1.30 0.10 0.51 0.25 3.10 1.80 Inches Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 www.anpec.com.tw APM2323A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max. www.anpec.com.tw Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8 Note: All temperatures refer to topside of the package. Measured on the body surface. APM2323A Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 178±1 B 60 ± 1.0 D 1.5 +0.1 C 12.0 D1 φ 0.1MIN J T1 T2 1.4 Ao 3.1 W 8.0+ 0.3 - 0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.2±0.03 2.5 ± 0.15 9.0 ± 0.5 Po 4.0 P1 2.0 ± 0.05 SOT- 23 F 3.5 ± 0.05 (mm) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw APM2323A Cover Tape Dimensions Application SOT-23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw
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