APM2323A
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-1.5A , RDS(ON)=130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V
Pin Description
D
• • •
G S
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
Top View of SOT-23
S
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
D G
P-Channel MOSFET
Ordering and Marking Information
APM2323 Lead Free Code Handling Code Tem p. Range Package Code Package Code A : SOT-23 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code
APM2323A :
M23X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw
APM2323A
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in2 pad area, t
(TA = 25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-4.5V
Rating -20 ±10 -1.5 -6 -1 150 -55 to 150 0.83 0.3 150
Unit
V A A °C W °C/W
≤ 10sec.
(TA = 25°C unless otherwise noted)
APM2323A Min. Typ. Max.
Electrical Characteristics
Symbol Parameter
Test Condition
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS VGS(th) IGSS RDS(ON) VSD
a a
-20 -1 -30 -0.45 -0.7 130 170 -0.7 4 -1 ±100 170 220 -1.3 6
V µA V nA mΩ V
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-1.5A VGS=-2.5V, IDS=-1A ISD=-1A, VGS=0V
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
Gate-Source Charge
VDS=-10V, VGS=-4.5V, IDS=-1.5A
0.6 0.7
nC
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
APM2323A Min. Typ. Max.
Test Condition
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
Notes:
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-20V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω
12 255 70 45 6 8 9.8 5 10 12 15 10
Ω pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Typical Characteristics
Power Dissipation
1.0 2.0
Drain Current
0.8
1.6
0.6
-ID - Drain Current (A)
Ptot - Power (W)
1.2
0.4
0.8
0.2
o
0.4 TA=25 C, VG=4.5V 60 80 100 120 140 160 0.0 0 20 40 60 80 100 120 140 160
o
0.0
TA=25 C 0 20 40
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
20 10 2
Thermal Transient Impedance
Normalized Transient Thermal Resistance
1
Duty = 0.5
-ID - Drain Current (A)
Rd s( on )L im it
300µs 1ms 10ms 100ms 1s DC
1
0.2 0.1
0.1
0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RθJA : 150 C/W
2
0.1
TA=25 C 0.01 0.01 0.1
o
1
10
100
0.01 1E-4
1E-3
0.01
0.1
1
10 30
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Typical Characteristics (Cont.)
Output Characteristics
8 VGS= -3,-4,-5,-6,-7,-8,-9,-10V 7
0.25 0.30
Drain-Source On Resistance
6
RDS(ON) - On - Resistance (Ω)
-ID - Drain Current (A)
0.20
VGS= -2.5V
5 4 3 2 1 0 0.0
-2V
0.15
VGS= -4.5V
0.10
0.05
0.00
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
6 1.8 1.6 Tj=-55 C
o
Gate Threshold Voltage
IDS = -250µA
Normalized Threshold Voltage
5
1.4 1.2 1.0 0.8 0.6 0.4 0.2
-ID - Drain Current (A)
4
Tj=25 C Tj=125 C
o
o
3
2
1
0 0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0.0 -50 -25
0
25
50
75
100 125 150
-VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8 VGS = -4.5V 1.6 IDS = -1.5A Tj=150 C
o
Source-Drain Diode Forward
6
Normalized On Resistance
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 135mΩ 0 25 50 75 100 125 150
o
-IS - Source Current (A)
1
Tj=25 C
o
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
500 Frequency=1MHz 5 VDS=-10 V IDS=-1.5 A
Gate Charge
-VGS - Gate-source Voltage (V)
20
400
4
C - Capacitance (pF)
300 Ciss 200
3
2
100 Crss 0
Coss
1
0
4
8
12
16
0
0
1
2
3
4
5
-VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Packaging Information
SOT-23
D B
3 E 1 2 H
e
A
A1
L
C
Dim A A1 B C D E e H L
Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 1.90/2.1 BSC. 2.40 0.37 3.00 Max. 1.30 0.10 0.51 0.25 3.10 1.80
Inches Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 2 5 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max.
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Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8
Note: All temperatures refer to topside of the package. Measured on the body surface.
APM2323A
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 178±1
B 60 ± 1.0 D 1.5 +0.1
C 12.0 D1 φ 0.1MIN
J
T1
T2 1.4 Ao 3.1
W 8.0+ 0.3 - 0.3 Bo 3.0
P 4.0 Ko 1.3
E 1.75 t 0.2±0.03
2.5 ± 0.15 9.0 ± 0.5 Po 4.0 P1 2.0 ± 0.05
SOT- 23
F 3.5 ± 0.05
(mm)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM2323A
Cover Tape Dimensions
Application SOT-23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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