APM2504NUC-TUL

APM2504NU N-Channel Enhancement Mode MOSFET Features • 25V/75A , RDS(ON)=3.6mΩ(typ.) @ VGS=10V RDS(ON)=5.4mΩ(typ.) @ VGS=4.5V Pin Description G D S • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 D Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information A PM 2504N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e A PM 2504N U : A PM 2504N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 1 www.anpec.com.tw APM2504NU Absolute Maximum Ratings Symbol Common Ratings (TA = 25°C) VDSS VGSS IS TJ TSTG Drain-Source Voltage Gate-Source Voltage Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 25 ±20 20 150 -55 to 150 180 100 75 50 50 20 2.5 W °C/W * Parameter Rating Unit V A °C °C Mounted on Large Heat Sink IDP ID PD RθJC 300ìs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RθJA 300ìs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 180 100 19 12 2.5 1 50 180 100 15 9 1.6 0.6 75 W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Note: * Current limited by bond wire. 300ìs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A °C/W °C/W °C/W Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 2 www.anpec.com.tw APM2504NU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM2504NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a ID=35A, VDD=15V VGS=0V, IDS=250µA VDS=20V, VGS=0V VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=40A VGS=4.5V, IDS=20A ISD=20A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 3.6 5.4 1.3 1.8 25 100 mJ V 1 2.5 ±100 4.5 7 µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b b 0.8 1.3 V Ω pF pF pF 1 4350 920 670 18 21 85 25 34 39 130 40 ns ns ns ns Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Notes: 38.5 VDS=15V, VGS=4.5V, IDS=20A 13.6 17.2 50 nC nC nC Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 3 www.anpec.com.tw APM2504NU Typical Characteristics Power Dissipation 60 90 80 Drain Current 50 70 ID - Drain Current (A) o Ptot - Power (W) 40 60 50 40 30 20 30 20 10 10 0 TC=25 C 0 20 40 60 80 100 120 140 160 180 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 300 2 Thermal Transient Impedance Normalized Transient Thermal Resistance 100 ID - Drain Current (A) it m Li n) o s( Rd 1 Duty = 0.5 1ms 10ms 100ms 0.2 0.1 10 1s DC 0.1 0.05 0.02 0.01 1 0.01 Single Pulse T =25 C 0.1 C 0.1 o 1 10 70 1E-3 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 4 www.anpec.com.tw APM2504NU Typical Characteristics (Cont.) Output Characteristics 180 160 10 VGS= 6,7,8,9,10V 5V 9 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 140 8 7 6 5 4 3 2 1 VGS=4.5V ID - Drain Current (A) 120 100 80 60 40 4.5V 4V VGS=10V 3.5V 20 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 30 60 90 120 150 180 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 180 160 140 1.6 Gate Threshold Voltage IDS =250µA Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) 120 100 80 60 40 20 0 Tj=125 C o Tj=25 C Tj=-55 C o o 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 5 www.anpec.com.tw APM2504NU Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 40A 100 200 Source-Drain Diode Forward Normalized On Resistance Tj=150 C o 1.2 1.0 0.8 0.6 RON@Tj=25 C: 3.6mΩ 0.4 -50 -25 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 10 Tj=25 C o 1 0.0 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 8000 Frequency=1MHz 7000 10 VDS=10V ID =20A Gate Charge VGS - Gate-source Voltage (V) 25 8 6000 C - Capacitance (pF) 5000 Ciss 4000 3000 2000 Coss 1000 0 Crss 6 4 2 0 5 10 15 20 0 0 15 30 45 60 75 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 6 www.anpec.com.tw APM2504NU Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 7 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 APM2504NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 8 www.anpec.com.tw APM2504NU Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 9 www.anpec.com.tw APM2504NU Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - May., 2005 10 www.anpec.com.tw