APM2506N

APM2506NU N-Channel Enhancement Mode MOSFET Features 25V/60A, RDS(ON)= 5mΩ (typ.) @ VGS= 10V RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged 1 Pin Description Pin 3 D 3 Pin 1 G 2 S Pin 2 Applications Power Management in Desktop Computer or DC/DC Converters Ordering and Marking Information APM2506N Lead Free Code Handing Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2506N U: APM2506N XXXXX XXXXX – Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 1 www.anpec.com.tw APM2506NU Absolute Maximum Ratings Symbol Common Ratings (TA = 25°C) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C ±25 ±20 150 -55 to 150 150 80 60* 40 50 20 2.5 W °C/W V °C °C Parameter Rating Unit Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C A A Mounted on PCB of 1in2 pad area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 150 80 17 10 2.5 1 50 150 80 13 7 1.5 0.5 75 W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Notes： * Current limited by bond wire 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A °C/W °C/W °C/W Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 2 www.anpec.com.tw APM2506NU Electrical Characteristics Symbol Parameter (TA=25°C) APM2506NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current ID=45A, VDD=15V VGS=0V, IDS=250µA VDS=20V, VGS=0V VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=40A VGS=4.5V, IDS=20A ISD=20A , VGS=0V TA=25°C 3000 670 360 13 VDD=15V, RL=15Ω IDS=1A, VGEN=10V, RG=6Ω 9 43 14 5 7 1 1.5 25 100 mJ V 1 2 ±100 6 10 µA V nA mΩ RDS(ON) a Drain-Source On-state Resistance Diode VSDa IS Diode Forward Voltage Diode continuous forward current 0.7 1.3 40 V A Dynamicb Ciss Input Capacitance Coss Crss td(ON) Tr td(OFF) Tf Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b VGS=0V VDS=15V Frequency=1.0MHz pF pF pF 20 15 66 28 ns ns ns ns Gate Charge Qg Total Gate Charge Qgs Qgd Notes： a : Pulse test ; pulse width≤300µs, duty cycle≤2% b : Guaranteed by design, not subject to production testing 32 VDS=15V, VGS=4.5V, IDS=20A 6.6 12.4 42 nC nC nC Gate-Source Charge Gate-Drain Charge Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 3 www.anpec.com.tw APM2506NU Typical Characteristics Power Dissipation 60 70 60 Drain Current 50 ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 180 Ptot - Power (W) 50 40 30 20 10 0 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 300 Thermal Transient Impedance 1 100 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse ID - Drain Current (A) 100µs 300µs 10 1ms 10ms DC 1 0.1 0.1 TC=25 C O 1 10 70 1E-3 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 4 www.anpec.com.tw APM2506NU Typical Characteristics Output Characteristics 100 12 Drain-Source On Resistance RDS(ON) - On Resistance (mΩ) VGS=3.5,4,5,6,7,8,9,10V 80 10 ID - Drain Current (A) 8 VGS=4.5V 60 3V 6 VGS=10V 40 4 20 2.5V 2 2V 0 0 0 2 4 6 8 10 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 100 1.6 Gate Threshold Voltage IDS =250µA 80 Normalized Threshold Voltage 5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 ID - Drain Current (A) 60 Tj=125 C 40 Tj=-55 C o o 20 Tj=25 C o 0 0 1 2 3 4 0 25 50 75 100 125 150 VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 5 www.anpec.com.tw APM2506NU Typical Characteristics Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 40A 100 Source-Drain Diode Forward Normalized On Resistance 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 5mΩ 0 25 50 75 100 125 150 o IS - Source Current (A) Tj=150 C 10 Tj=25 C o o 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 6000 Frequency=1MHz 9 10 VDS=10 V Gate Charge 5000 VGS - Gate-Source Voltage (V) I D = 30 A 8 7 6 5 4 3 2 1 C - Capacitance (nC) 4000 Ciss 3000 2000 1000 Crss 0 0 5 10 15 Coss 0 20 25 0 10 20 30 40 50 60 70 VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 6 www.anpec.com.tw APM2506NU Avalanche Test Circuit and Waveforms VDS DUT RG L tp VDSX(SUS) VDS IAS VDD IL 0.01Ω VDD EAS tp tAV Switching Time Test Circuit and Waveforms VDS RD DUT RG VGS VDD 10% tp VDS 90% VGS td(on) tr td(off) tf Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 7 www.anpec.com.tw APM2506NU Package information E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 6.35 3.96 9.398 0.51 0.64 0.89 1.02 2.032 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.250 0.156 0.370 0.020 0.025 0.035 Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 0.040 0.080 Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 8 www.anpec.com.tw APM2506NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate (183°C to Peak) Preheat temperature (125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature 3°C/ second max. 120 seconds max. 60~150 seconds 10~20 seconds 220 + 5/-0°C or 235 +5°C/-0°C 6°C /second max. 6 minutes max. 60 seconds 215~ 219 °C or 235 +5°C/-0°C 10°C /second max. VPR 10°C /second max. Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 9 www.anpec.com.tw APM2506NU Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimension t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application TO-252 A 330±3 F 7.5±0.1 B 100±2 D 1.5±0.1 C 13±0.5 D1 1.5±0.25 J 2±0.5 Po 4.0±0.1 T1 16.4+0.3 -0.2 P1 2.0±0.1 T2 2.5±0.5 Ao 6.8±0.1 W 16+0.3 16-0.1 Bo 10.4±0.1 P 8±0.1 Ko 2.5±0.1 E 1.75±0.1 t 0.3±0.05 (mm) Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 10 www.anpec.com.tw APM2506NU Cover Tape Dimensions Application TO-252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003 11 www.anpec.com.tw