APM2506NUBC-PB

APM2506NUB N-Channel Enhancement Mode MOSFET Features • 25V/60A , RDS(ON)=4.8mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=4.5V Pin Description 1 2 3 • • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) G D D S Top View of TO-251 Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information APM2506N Lead Free Code Handling Code Temp. Range Package Code Package Code UB : TO-251 Operating Junction Temp. Range C : -55 to 150° C Handling Code PB : Plastic Bag Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2506N UB : APM2506N XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 1 www.anpec.com.tw APM2506NUB Absolute Maximum Ratings Symbol Parameter Rating 25 ±20 150 -55 to 150 TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 40 150 80 60 50 50 20 2.5 W °C/W * Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Note: * Current limited by bond wire. 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient 150 80 12 5.5 1.25 0.25 100 W °C/W A A Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 2 www.anpec.com.tw APM2506NUB Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM2506NUB Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a ID=20A, L=0.5mH VGS=0V, IDS=250 µA VDS=20V, VGS=0V VDS=VGS, IDS=250µA VGS=±20V, V DS=0V VGS=10V, IDS=40A VGS=4.5V, IDS=20A ISD=20A, VGS=0V ISD=10A, dISD/dt =100A/µs 4.8 7 1.3 1.8 25 100 mJ V 1 2.5 ±100 6 9 µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage trr b b 0.7 30 14 1.1 V ns nC Ω pF Reverse Recovery Time Reverse Recovery Charge b Qrr Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 1.0 3100 680 520 19 20 62 43 2.1 ns Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 37.5 VDS=15V, VGS=4.5V, IDS=40A 9.4 21 56 nC Gate-Source Charge Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 3 www.anpec.com.tw APM2506NUB Typical Characteristics Power Dissipation 60 70 60 50 40 30 20 10 Drain Current 50 40 30 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 o ID - Drain Current (A) Ptot - Power (W) 0 0 TC=25 C, VG=10V 0 20 40 60 80 100 120 140 160 180 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 300 100 it Lim n) s(o Rd Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 1ms 10ms 100ms ID - Drain Current (A) 10 1s DC 0.1 0.05 0.02 0.01 1 0.01 Single Pulse 0.1 0.1 TC=25 C 1 10 70 o Mounted on minimum pad o RθJA :100 C/W 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 4 www.anpec.com.tw APM2506NUB Typical Characteristics (Cont.) Output Characteristics 100 VGS=3.5,4,5,6,7,8,9,10V 80 12 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 10 ID - Drain Current (A) 8 60 3V 40 VGS=4.5V 6 VGS=10V 4 20 2.5V 2 0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance 14 ID= 40A Gate Threshold Voltage 1.6 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RDS(ON) - On - Resistance (mΩ) 12 10 8 6 4 2 Normalized Threshold Vlotage 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 5 www.anpec.com.tw APM2506NUB Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 40A 100 Source-Drain Diode Forward Normalized On Resistance 1.50 IS - Source Current (A) Tj=150 C 10 Tj=25 C o o 1.25 1.00 0.75 0.50 0.25 RON@Tj=25 C: 4.8mΩ 0.00 -50 -25 0 25 50 75 100 125 150 o 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 5000 Frequency=1MHz 10 9 VDS=15V ID = 40A Gate Charge VGS - Gate-source Voltage (V) 4000 8 7 6 5 4 3 2 1 0 C - Capacitance (pF) Ciss 3000 2000 1000 Crss 0 Coss 0 5 10 15 20 25 0 10 20 30 40 50 60 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 6 www.anpec.com.tw APM2506NUB Avalanche Test Circuit and Waveforms V DS L DUT tp V DSX(SUS) V DS IAS RG V DD V DD tp IL 0.01 Ω EAS t AV Switching Time Test Circuit and Waveforms V DS RD DUT V GS RG V DD 10% tp V DS 90% V GS t d (on) t r t d (off) t f Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 7 www.anpec.com.tw APM2506NUB Packaging Information TO-251 E b2 A C1 E1 E1 D1 H D b e1 C A1 Dim A A1 b b2 C C1 D D1 E E1 e1 H Min. 2.20 1.02 0.50 5.20 0.40 0.40 5.40 5.30 6.35 4.40 4.50 12.90 Millimeters Max. 2.40 1.27 0.88 5.46 0.60 0.60 6.20 -6.70 5.40 4.70 15.25 Min. 0.087 0.040 0.020 0.205 0.016 0.016 0.213 0.209 0.250 0.173 0.177 0.508 Inches Max. 0.094 0.050 0.035 0.215 0.024 0.024 0.244 -0.264 0.213 0.185 0.600 Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 8 www.anpec.com.tw D1 APM2506NUB Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 9 www.anpec.com.tw APM2506NUB Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 P ackage Thickness Volum e m m Volume mm < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2.5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 10 www.anpec.com.tw