APM2509NUBC-PB

APM2509NUB N-Channel Enhancement Mode MOSFET Features • 25V/50A , RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V Pin Description 1 2 3 • • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) G D D S Applications • Power Management in Desktop Computer or DC/DC Converters Top View of TO-251 G S N-Channel MOSFET Ordering and Marking Information APM2509N Lead Free Code Handling Code Temp. Range Package Code Package Code UB : TO-251 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code PB : Plastic Bag Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2509N UB : APM2509N XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 1 www.anpec.com.tw APM2509NUB Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 25 ±20 150 -55 to 150 30 100 65 50* 38 50 20 2.5 W °C/W V °C °C A Unit Common Ratings (TA=25°C Unless Otherwise Noted) Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested A Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case A Mounted on PCB of Minimum Footprint IDP ID PD RθJA Note: * Current limited by bond wire. 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 65 9.5 4 1.25 0.25 100 W °C/W A A C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 2 www.anpec.com.tw APM2509NUB Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2509NUB Min. Typ. Max. Unit Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, L=0.5mH VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=30A VGS=4.5V, IDS=15A ISD=10A, VGS=0V ISD=10A, dISD/dt =100A/µs 7.5 13 1.3 1.8 50 mJ Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a 25 1 30 2.5 ±100 9 18 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage b trr b Qrr 0.9 17 6 1.1 V ns nC Ω pF Reverse Recovery Time Reverse Recovery Charge b Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 1.8 1560 345 245 17 18 41 16 ns Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Notes: 17.5 VDS=15V, VGS=4.5V, IDS=30A 5 11 26 nC Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 3 www.anpec.com.tw APM2509NUB Typical Characteristics Power Dissipation 60 60 Drain Current 50 50 ID - Drain Current (A) o Ptot - Power (W) 40 40 30 30 20 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 10 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 o 0 0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 300 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 Rd s(o n) Lim it ID - Drain Current (A) 10ms 100ms 10 1s 0.1 0.05 0.02 0.01 DC 1 0.01 Single Pulse 0.1 0.1 Tc=25 C 1 10 70 o 1E-3 1E-4 Mounted on minimum pad o RθJA :100 C/W 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 4 www.anpec.com.tw APM2509NUB Typical Characteristics (Cont.) Output Characteristics 100 90 80 VGS=4,5,6,7,8,9,10V Drain-Source On Resistance 22 20 RDS(ON) - On - Resistance (mΩ) 18 16 14 12 10 8 6 4 VGS=10V VGS=4.5V ID - Drain Current (A) 70 60 50 40 30 20 3.5V 3V 2.5V 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance 18 16 14 12 10 8 6 4 ID= 30A Gate Threshold Voltage 1.6 IDS =250µA 1.4 RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 5 www.anpec.com.tw APM2509NUB Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 30A 10 40 Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 RON@Tj=25 C: 7.5mΩ 0.4 -50 -25 0 25 50 75 100 125 150 o Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 3000 Frequency=1MHz Gate Charge 10 9 VDS=15V ID = 30A VGS - Gate-source Voltage (V) 25 2500 8 7 6 5 4 3 2 1 C - Capacitance (pF) 2000 Ciss 1500 1000 500 Crss 0 0 5 Coss 10 15 20 0 0 5 10 15 20 25 30 35 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 6 www.anpec.com.tw APM2509NUB Avalanche Test Circuit and Waveforms V DS L DUT tp V DSX(SUS) V DS IAS RG V DD V DD tp IL 0.01 Ω EAS t AV Switching Time Test Circuit and Waveforms V DS RD DUT V GS RG V DD 10% tp V DS 90% V GS t d (on) t r t d (off) t f C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 7 www.anpec.com.tw APM2509NUB Packaging Information TO-251 E b2 A C1 E1 E1 D1 H D b e1 C A1 Dim A A1 b b2 C C1 D D1 E E1 e1 H Min. 2.20 1.02 0.50 5.20 0.40 0.40 5.40 5.30 6.35 4.40 4.50 12.90 Millimeters Max. 2.40 1.27 0.88 5.46 0.60 0.60 6.20 -6.70 5.40 4.70 15.25 Min. 0.087 0.040 0.020 0.205 0.016 0.016 0.213 0.209 0.250 0.173 0.177 0.508 Inches Max. 0.094 0.050 0.035 0.215 0.024 0.024 0.244 -0.264 0.213 0.185 0.600 C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 8 www.anpec.com.tw D1 APM2509NUB Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 9 www.anpec.com.tw APM2509NUB Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 P ackage Thickness Volum e m m Volume mm < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2.5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 C opyright © A NPEC Electronics Corp. Rev. B.1 - Jun., 2006 10 www.anpec.com.tw