APM2512N

APM2512N N-Channel Enhancement Mode MOSFET Features • • • • 25V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description 1 2 3 G D S Top View of TO-252 D Applications • Power Management in Computer, Portable Equipment and Battery Powered Systems. G S N-Channel MOSFET Ordering and Marking Information APM2512N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 C ° Handling Code TR : Tape & Reel L : Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2512N U : APM2512N XXXXX Absolute Maximum Ratings Symbol VDSS VGSS  Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 25 ±20 Unit V ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 1 www.anpec.com.tw APM2512N Absolute Maximum Ratings (Cont.) Symbol ID IDM PD TJ,TSTG * RθJA (TC= 25°C unless otherwise noted) Rating 40 90 50 20 -55 to 150 50 2.5 °C °C/W A W Unit Parameter Maximum Drain Current – Continuous Maximum Pulsed Drain Current ( pulse width ≤ 300µs) Tc=25°C Maximum Power Dissipation Tc=100°C Maximum Operating and Storage Junction Temperature Thermal Resistance – Junction to Ambient Thermal Resistance – Junction to Case 2 RθJC  * Mounted on 1in pad area of PCB. Electrical Characteristics S ymbol S tatic B V DSS IDSS V GS(th) IGSS R DS(ON) V SD a b a (TA = 25°C unless otherwise noted) APM2512N Typ. Max. Parameter Test Condition Min. Unit D rain-Source Breakdown Voltage Z ero Gate Voltage Drain Current G ate Threshold Voltage G ate Leakage Current D rain-Source On-state Resistance D iode Forward Voltage V GS =0V , IDS=250 µA V DS =20V , V GS=0V V DS =V GS , IDS=250 µA V GS = ± 20V , V DS=0V V GS =10V , IDS=20A V GS =4.5V , IDS=10A ISD =10A , VGS=0V V DS =15V , IDS= 10A V GS =10V ,  V DD =10V , IDS=10A , V GEN =10V , R G=6 Ω  V GS =0V 25 1 1 1.5 9 13 0.9  28 3.6 8 .4        10 15 35 15 1560 345 245 20 25 50 20    2 ± 100 12 20 1.3 38 V µA V nA mΩ V D ynamic Q g Total Gate Charge Q gs Q gd td(ON) T r td(OFF) T f C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC ns V DS =15V Reverse Transfer Capacitance Fre q uenc y=1.0MHz pF  Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing 2 www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 APM2512N Typical Characteristics Output Characteristics 40 35 VGS=5,6,7,8,9,10V VGS=4V 40 35 Transfer Characteristics ID-Drain Current (A) ID-Drain Current (A) 30 25 20 15 10 5 0 0 1 2 3 VGS=2.5V 4 5 6 7 8 9 10 VGS=3V VGS=3.5V 30 25 20 15 10 5 Tj=125 C Tj=25 C o o Tj=-55 C o 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.8 1.6 IDS =250µA 0.024 0.022 On-Resistance vs. Drain Current RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 5 10 15 20 25 30 35 40 VGS=10V VGS=4.5V Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 3 www.anpec.com.tw APM2512N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.016 0.015 ID=20A On-Resistance vs. Junction Temperature 1.8 1.6 VGS = 10V IDS = 20A 1.4 1.2 1.0 0.8 0.6 0.4 RON@Tj = 25°C: 9mΩ -25 0 25 50 75 100 125 150 RDS(ON)-On-Resistance (Ω) 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Normalized) 0.2 -50 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 3000 VDS= 15 V 8 IDS = 10A 2500 Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) Capacitance (pF) 2000 1500 1000 500 0 Crss 0 5 10 15 20 25 Coss Ciss 6 4 2 0 0 5 10 15 20 25 30 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 4 www.anpec.com.tw APM2512N Typical Characteristics Source-Drain Diode Forward Voltage 40 700 600 Single Pulse Power Mounted on 1in pad o TA=25 C 2 IS-Source Current (A) 10 500 Power (W) 1.2 1.4 400 300 200 100 Tj=150 C 1 o Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1E-4 1E-3 0.01 0.1 1 10 100300 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 PDM t 1 t 2 0.01 SINGLE PULSE 1.Duty Cycle, D= t1/t2 2.Per Unit Base=RthJA=50 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted on 1in pad 2 o 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 300 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 5 www.anpec.com.tw APM2512N Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 APM2512N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 7 APM2512N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 8 www.anpec.com.tw APM2512N Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 9 www.anpec.com.tw