APM2512NU

APM2512NU N-Channel Enhancement Mode MOSFET Features • 25V/40A, RDS(ON)=9mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=4.5V Pin Description • • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) D Top View of TO-252 Applications • G Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Ordering and Marking Information APM2512N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2512N U : APM2512N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM2512NU Absolute Maximum Ratings Symbol Parameter Rating 25 ±20 150 -55 to 150 TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 14 100 65 40 25 50 20 2.5 W °C/W V °C °C A Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 65 10 6 2.5 1 50 100 65 7 4 1.6 0.6 75 W °C/W W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 www.anpec.com.tw APM2512NU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM2512NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=20V VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 9 13 1.3 1.8 50 mJ Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current 25 1 30 2.5 ±100 12 20 V µA V nA mΩ RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSD a Diode Forward Voltage 0.9 1.3 V Ω pF Dynamic Characteristics b RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd Notes: Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b 1.1 1560 345 245 10 6 33 10 18 11 47 14 ns Gate Charge Characteristics Total Gate Charge 33 VDS=15V, VGS=10V, IDS=20A 4.6 10 43 nC Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM2512NU Typical Characteristics Power Dissipation 60 50 Drain Current 50 40 40 ID - Drain Current (A) Ptot - Power (W) 30 30 20 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 o 10 TC=25 C,VG=10V 0 0 20 40 60 80 100 120 140 160 180 o 0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 300 100 2 1 Thermal Transient Impedance Rd s(o n) Lim it Duty = 0.5 0.2 ID - Drain Current (A) 10ms 100ms 10 1s 0.1 0.02 0.01 0.1 0.05 DC 1 0.01 Single Pulse T =25 C 0.1 c 0.1 o 1 10 70 1E-3 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 4 www.anpec.com.tw APM2512NU Typical Characteristics (Cont.) Output Characteristics 100 VGS=6,7,8,9,10V 90 80 5V 22 20 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 18 16 14 12 10 8 6 4 VGS=4.5V ID - Drain Current (A) 70 60 50 4.5V 4V 40 30 3.5V 20 10 0 0 1 2 3 4 3V 2.5V 5 VGS=10V 2 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 100 90 80 1.6 Gate Threshold Voltage IDS =250µA 1.4 ID - Drain Current (A) 70 60 50 40 30 20 10 0 0 1 Tj=125 C o Normalized Threshold Voltage 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 Tj=25 C Tj=-55 C o o 2 3 4 5 6 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 5 www.anpec.com.tw APM2512NU Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 20A 10 40 Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 9mΩ 0 25 50 75 100 125 150 o Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 3000 Frequency=1MHz 10 VDS=15V 9 ID = 20A Gate Charge VGS - Gate-source Voltage (V) 25 2500 8 7 6 5 4 3 2 1 C - Capacitance (pF) 2000 Ciss 1500 1000 500 Crss 0 0 5 Coss 10 15 20 0 0 5 10 15 20 25 30 35 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 6 www.anpec.com.tw APM2512NU Avalanche Test Circuit and Waveforms V DS L DUT tp V DSX(SUS) V DS IA S RG V DD V DD tp IL 0.01 Ω EA S tA V Switching Time Test Circuit and Waveforms V DS RD DUT V GS RG V DD 10% tp V DS 90% V GS t d (on) t r t d (off) t f Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 7 www.anpec.com.tw APM2512NU Package Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 D1 C A1 E1 Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032 8 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080 www.anpec.com.tw Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 APM2512NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 9 www.anpec.com.tw APM2512NU Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 P ackage Thickness Volume mm Volume mm < 350 ≥ 350 < 2.5 mm 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 10 www.anpec.com.tw APM2512NU Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © A NPEC Electronics Corp. Rev. B.2 - Oct., 2005 11 www.anpec.com.tw