APM2522NUC-TR

APM2522NU N-Channel Enhancement Mode MOSFET Features • 25V/30A, RDS(ON)=15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V Pin Description 3 1 2 • • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Pin 3 D Applications • Power Management in Desktop Computer or DC/DC Converters Pin 1 G S Pin 2 Ordering and Marking Information APM2522N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2522N U : APM2522N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2522NU Absolute Maximum Ratings Symbol Parameter Rating 25 ±20 150 -55 to 150 TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 20 100 70 30 * Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested V °C °C A A Mounted on Large Heat Sink ID PD RθJC Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 20 50 20 2.5 A W °C/W Mounted on PCB of 1in Pad Area ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 9 6 2.5 1 50 7 4 1.5 0.5 75 °C/W °C/W W °C/W A Mounted on PCB of Minimum Footprint ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A Notes ： * Current limited by bond wire. C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM2522NU Electrical Characteristics Symbol Parameter (TA = 25°C) Test Condition VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A, VGS=0V ISD=10A, dISD/dt =100A/µs Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a 25 1 30 1 1.5 15 22 0.7 50 3 2.5 ±100 20 28 1.1 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge b V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω b 2 825 125 85 13 19 31 5 24 35 57 10 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 17 VDS=15V, VGS=10V, IDS=20A 2 5 24 nC Gate-Source Charge Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2522NU Typical Characteristics Power Dissipation 60 Drain Current 35 30 25 20 15 10 5 50 40 30 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 o ID - Drain Current (A) Ptot - Power (W) 0 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 300 100 Thermal Transient Impedance 2 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.05 ID - Drain Current (A) n) s(o Rd it Lim 1ms 10ms 100ms 1s DC 10 0.1 0.01 0.02 1 Single Pulse 0.1 0.1 TC=25 C o 1 10 70 0.01 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM2522NU Typical Characteristics (Cont.) Output Characteristics 60 VGS= 5,6,7,8,9,10V 50 4V 35 Drain-Source On Resistance ID - Drain Current (A) 3.5V 40 RDS(ON) - On - Resistance (mΩ) 30 25 VGS= 4.5V 30 3V 20 20 VGS=10V 15 10 2.5V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance 30 28 ID=20A Gate Threshold Voltage 1.6 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RDS(ON) - On - Resistance (mΩ) 26 24 22 20 18 16 14 12 10 1 2 3 4 5 6 7 8 9 10 Normalized Threshold Vlotage 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 www.anpec.com.tw APM2522NU Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = 10V 1.8 IDS = 20A Source-Drain Diode Forward 100 Normalized On Resistance 1.6 Tj=150 C o IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 15mΩ 0 25 50 75 100 125 150 o 10 Tj=25 C o 1 0.3 0.0 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 1200 10 Gate Charge VDS=15V ID = 20A Frequency=1MHz 9 VGS - Gate-source Voltage (V) 1000 8 7 6 5 4 3 2 1 0 C - Capacitance (pF) 800 Ciss 600 400 200 Crss 0 0 5 10 Coss 15 20 25 30 0 3 6 9 12 15 18 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 6 www.anpec.com.tw APM2522NU Avalanche Test Circuit and Waveforms VDS L DUT tp VDSX(SUS) VDS IAS RG VDD VDD tp IL 0.01Ω EAS tAV Avalanche Test Circuit and Waveforms VDS RD DUT VGS RG VDD 10% VDS 90% tp VGS td(on) tr td(off) tf C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM2522NU Packaging Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 6.35 3.96 9.398 0.51 0.64 0.89 1.02 2.032 Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.250 0.156 0.370 0.020 0.025 0.035 Inches Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 0.040 0.080 C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw APM2522NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate (183°C to Peak) Preheat temperature (125 ± 5°C) 2 Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature 3°C/ second max. 120 seconds max. 60~150 seconds 10~20 seconds 6°C /second max. 6 minutes max. 60 seconds 10°C /second max. 220 + 5/-0°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C VPR 10°C /second max. Classification Reflow Profiles pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0° C VPR 215-219° C IR/Convection 220 +5/-0° C C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 pkg. thickness < 2.5mm and 3 pkg. volume ≥ 350mm pkg. thickness < 2.5mm and pkg. volume 3 < 350mm Convection 235 +5/-0° C VPR 235 +5/-0° C IR/Convection 220 +5/-0° C www.anpec.com.tw APM2522NU Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko T2 J C A B T1 Application A 330±3 B 100±2 D 1.5±0.1 C 13±0.5 D1 1.5±0.25 J 2±0.5 Po 4.0±0.1 T1 16.4+0.3 -0.2 P1 2.0±0.1 T2 2.5±0.5 Ao 6.8±0.1 W 16+0.3 16-0.1 Bo 10.4±0.1 P 8±0.1 Ko 2.5±0.1 E 1.75±0.1 t 0.3±0.05 TO-252 F 7.5±0.1 (mm) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw APM2522NU Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw