APM3011NUC-TR

APM3011NU N-Channel Enhancement Mode MOSFET Features • 30V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V Pin Description G D S • • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 (2) D1 Applications • Power Management in Desktop Computer or DC/DC Converters S1 (3) (1) G1 N-Channel MOSFET Ordering and Marking Information A PM 3011N L e a d F re e C o d e H a n d lin g C o d e Tem p. Range P ackage C ode P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube T R : T ape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e A PM 3011N U : A PM 3011N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM3011NU Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 30 ±20 150 -55 to 150 100 65 40 22 50 20 2.5 W °C/W V °C °C Unit Common Ratings (TA=25°C Unless Otherwise Noted) Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in pad area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C 100 65 10 6 2.5 1 50 100 65 7 4 1.5 0.5 75 W °C/W W °C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 www.anpec.com.tw APM3011NU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM3011NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy ID=20A, VDD=20V 30 100 mJ Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) IGSS RDS(ON) a V 1 30 µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A , VGS=0V 9 13 1 1.5 2 ±100 11 17 Diode Characteristics a VSD Diode Forward Voltage b IS b 0.9 1.3 20 V A Diode continuous forward current TC=25°C 1560 345 245 10 VDD=15V, RL=15Ω, IDS=1A, VGEN=4.5V, RG=6Ω b Dynamic Characteristics Ciss Input Capacitance Coss Crss td(ON) Tr td(OFF) Tf Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V, VDS=15V, Frequency=1.0MHz pF 20 25 50 20 ns 15 35 15 Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge 17.8 VDS=15V, VGS=4.5V, IDS=20A 4.6 10 24 nC Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM3011NU Typical Characteristics Power Dissipation 60 50 Drain Current 50 40 40 ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 180 Ptot - Power (W) 30 30 20 20 10 10 0 0 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 300 100 2 1 Thermal Transient Impedance ID - Drain Current (A) it im )L (on s Rd Duty = 0.5 0.2 10ms 100ms 10 1s 0.1 0.05 0.02 0.01 0.1 DC 1 0.01 Single Pulse 0.1 0.1 Tc=25 C o 1 10 70 1E-3 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 4 www.anpec.com.tw APM3011NU Typical Characteristics (Cont.) Output Characteristics 40 VGS=5,6,7,8,9,10V 35 30 4V 24 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 20 ID - Drain Current (A) 16 25 20 15 10 5 0 3V 3.5V VGS=4.5V 12 VGS=10V 8 4 2.5V 0 2 4 6 8 10 0 0 5 10 15 20 25 30 35 40 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 40 36 32 1.6 Gate Threshold Voltage IDS =250µA Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 ID - Drain Current (A) 28 24 20 16 12 8 4 0 0 1 Tj=125 C Tj=-55 C o o Tj=25 C o 2 3 4 5 0.2 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 5 www.anpec.com.tw APM3011NU Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 20A 10 40 Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 RON@Tj=25 C: 9mΩ 0.4 -50 -25 0 25 50 75 100 125 150 o Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 2500 Frequency=1MHz 10 V 9 DS Gate Charge =15 V ID = 2 0 A VGS - Gate-source Voltage (V) 25 2000 8 7 6 5 4 3 2 1 C - Capacitance (pF) Ciss 1500 1000 500 Crss 0 0 5 10 Coss 15 20 0 0 5 10 15 20 25 30 35 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 6 www.anpec.com.tw APM3011NU Avalanche Test Circuit and Waveforms V DS L DUT tp V D SX( SU S) V DS IA S RG V DD V DD tp IL 0.0 1 Ω EA S tAV Switching Time Test Circuit and Waveforms V DS RD DUT V RG V DD 10% tp V DS 90% GS V GS t d (on) t r t d (off) t f Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 www.anpec.com.tw APM3011NU Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 8 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 APM3011NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw APM3011NU Classification Reflow Profiles(Cont.) T able 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw APM3011NU Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 11 www.anpec.com.tw