APM3020P

APM3020P P-Channel Enhancement Mode MOSFET Features • • • • -30V/-11A, RDS(ON) = 17mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -5V Super High Density Cell Design Reliable and Rugged TO-252 Package Pin Description G D S Applications Top View of TO-252 • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Ordering and Marking Information APM 3020P H a n d lin g C o d e T e m p. R a ng e P a c ka g e C o d e P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 3020P U : APM 3020P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -30 ±20 -40 -70 50 20 Unit V A W Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation TA=25 ºC TA=100 ºC ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 1 www.anpec.com.tw APM3020P Absolute Maximum Ratings Symbol TJ TSTG RθJC Parameter Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Case (TA = 25°C unless otherwise noted) Rating 150 -55 to 150 2.5 Unit ºC ºC ºC/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM3020P Min. -30 -1 -1 17 24 -1.3 23 10 9 VDD=-15V , IDS=-6A , VGEN=-10 V , RG=1Ω RL=2.5Ω VGS=0V VDS=-25V Frequency=1.0MHz 16 22 75 31 3720 580 245 pF 30 30 120 80 ns -3 ±100 20 30 -1.3 30 nC Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage VGS=0V , IDS=-250A Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V VGS=-10V , IDS=-11A VGS=-5V , IDS=-7A ISD=-11A, VGS=0V VDS=-15V , VGS=-4.5V, IDS=-4.6A V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Notes a b Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 2 www.anpec.com.tw APM3020P Typical Characteristics Output Characteristics 50 VGS=4,5,6,7,8,9,10V Transfer Characteristics 50 -IDS-Drain Current (A) 30 20 -IDS-Drain Current (A) 40 40 30 V GS=3V 20 TJ=125°C TJ=25°C TJ=-55°C 10 VGS=2.5V 10 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -VDS-Drain-to-Source Voltage (V) -VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250µA On-Resistance vs. Drain Current 0.035 -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.030 -VGS=5V 0.025 0.020 0.015 0.010 0.005 -VGS=10V -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 Tj-Junction Temperature (°C) -IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 3 www.anpec.com.tw APM3020P Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.15 -IDS=7A On-Resistaence vs. Junction Temperature 0.030 -V GS=10V -IDS=11A RDS (ON)-On-Resistance (Ω) 0.12 RDS(ON)-On-Resistance (Ω) (Normalized) 0.025 0.020 0.015 0.010 0.005 0.000 -50 0.09 0.06 0.03 0.00 0 2 4 6 8 10 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 3000 -VDS =15V -IDS=4.6A Capacitance Characteristics -VGS-Gate-to-Source Voltage (V) C-Capacitance (pF) 8 2500 Ciss 2000 1500 1000 500 0 Coss Crss 6 4 2 0 0 10 20 30 40 0 5 10 15 20 25 30 QG-Total Gate Charge (nC) -VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 4 www.anpec.com.tw APM3020P Typical Characteristics Cont. Source-Drain Diode Forward Voltage 50 Single Pulse Power 3000 2500 2000 10 -ISD-Source Current (A) Power (W) 1 TJ=150°C TJ=25°C 1500 1000 500 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 5 www.anpec.com.tw APM3020P Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 7 APM3020P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape Po E P P1 D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 1.5± 0.25 J 2 ± 0.5 Po 4.0 ± 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T2 2.5± 0.5 Ao 6.8 ± 0.1 W 16+ 0.3 - 0.1 Bo 10.4± 0.1 P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 8 www.anpec.com.tw APM3020P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - July., 2002 9 www.anpec.com.tw