APM3023NFC-TR

APM3023N N-Channel Enhancement Mode MOSFET Features • • • • 30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Super High Dense Cell Design Pin Description 1 2 3 1 2 3 High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages G D S G D S Top View of TO-252 Top View of SOT-223 Applications • • Switching Regulators Switching Converters 3 2 1 S D G TO-220 Package Ordering and Marking Information A P M 3 023 N H a n d lin g C o d e Tem p. R ange Package C ode Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel F : T O -2 2 0 A P M 3 0 2 3 N U /F : : AP M 3023N XXXXX XXXXX - D a te C o d e AP M 3023N V : AP M 3023N XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 30 70 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 1 www.anpec.com.tw APM3023N Absolute Maximum Ratings (Cont.) Symbol Parameter TO-252/TO-220 TA=25°C PD Maximum Power Dissipation TA=100°C TJ TSTG Maximum Junction Temperature Storage Temperature Range SOT-223 TO-252/TO220 SOT-223 (TA = 25°C unless otherwise noted) Rating 62.5 Unit W 3 25 W 1.2 150 -55 to 150 °C °C Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) Test Condition APM3023N Min. Typ. Max. Unit Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA VGS=±20V , VDS=0V VGS=10V , IDS=20A VGS=5V , IDSs=10A ISD=15A , VGS=0V VDS=15V , IDS= 10A VGS=5V , 30 1 5 1 1.5 15 22 0.7 15 5.8 3.8 11 18 26 54 30 2 ±100 20 28 1.3 20 V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC VDD=15V , IDS=2A , VGEN=10V , RG=6Ω VGS=0V 17 37 20 1200 220 100 ns VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 2 www.anpec.com.tw APM3023N Typical Characteristics Output Characteristics 30 VGS=5,6,7,8,9,10V 40 Transfer Characteristics VDS=10V IDS-Drain Current (A) 25 IDS-Drain Current (A) 30 20 VGS=4V 15 10 5 VGS=3V 20 TJ=25°C 10 TJ=125°C TJ=-55°C 0 0 2 4 6 8 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 On-Resistance vs. Drain Current 0.040 IDS=250µA VGS(th)-Threshold Voltage (V) (Normalized) 1.0 RDS(ON)-On-Resistance (Ω) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 VGS=5V 0.8 VGS=10V 0.6 0. 4 -50 -25 0 25 50 75 100 125 150 0.000 0 5 10 15 20 25 30 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 3 www.anpec.com.tw APM3023N Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 45 IDS=20A On-Resistaence vs. Junction Temperature 1.6 RDS (ON)-On-Resistance (Ω) RDS(ON)-On-Resistance (Ω) (Normalized) 40 35 30 25 20 15 10 5 0 3 4 5 6 7 8 V GS=10V ID=12A 1.4 1.2 1.0 0.8 9 10 0.6 -50 -25 0 25 50 75 10 0 12 5 15 0 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 2000 Capacitance Characteristics Ciss 1000 VGS-Gate-to-Source Voltage (V) VDS=15V IDS=10A C-Capacitance (pF) 8 6 500 Coss 4 Crss 2 1 00 Frequency=1MHz 0 0 5 10 15 20 25 30 0.1 1 10 30 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 4 www.anpec.com.tw APM3023N Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 100 3000 2500 Single Pulse Power TO-252 / TO-220 ISD-Source Current (A) Power (W) 10 2000 1500 1000 500 0 -5 10 1 TJ=125°C TJ=25°C TJ=-55°C 0.1 0 .0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -4 10 -3 10 -2 10 -1 10 0 10 1 VSD-Source to Drain Voltage Time (sec) Single Pulse Power SOT-223 3000 2500 2000 1500 1000 500 0 -5 10 Power (W) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Time (sec) Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 5 www.anpec.com.tw APM3023N Typical Characteristics (Cont.) Normalized Thermal Transient Impedence, Junction to Ambient TO-252 / TO-220 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 SOT-223 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=42°C/W 3.TJM-TA=PDMZthJA 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 6 www.anpec.com.tw APM3023N Package Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 7 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 APM3023N Package Information SOT-223( Reference JEDEC Registration SOT-223) D B1 A c a H E L K e e1 b A1 B Dim A A1 B B1 c D E e e1 H L K α β Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° Min. 0.06 0.02 0.11 0.01 0.25 0.13 Inches Max. 0.07 0.03 0.12 0.01 0.26 0.15 0.09 BSC 0.18 BSC 0.29 0.04 0.08 10° 13° 13° Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 8 www.anpec.com.tw APM3023N TO-220 ( Reference JEDEC Registration TO-220) D Q R b E e b1 e1 L1 H1 L A F c J1 Millimeters Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Inches Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 9 www.anpec.com.tw APM3023N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 10 APM3023N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 A pp lication A 330 ± 3 B 100 ± 2 D C 13 ± 0 . 5 D1 T1 T2 16.4 + 0.3 2.5 ± 0 .5 2 ± 0 .5 -0.2 Po P1 Ao J W 16+ 0.3 - 0.1 Bo P 8 ± 0 .1 Ko E 1.75 ± 0 .1 t TO-252 F 7.5 ± 0 .1 1.5 +0.1 1.5 ± 0 .25 4.0 ± 0 .1 2.0 ± 0 .1 6.8 ± 0 .1 10.4 ± 0 .1 2.5 ± 0 .1 0.3 ± 0.05 A pp lication A 330 ± 1 SOT-223 F B 62 ± 1.5 D C 12.75 ± 0.15 D1 J 2 ± 0 .6 Po T1 12.4 +0.2 P1 T2 2 ± 0 .2 Ao W 12 ± 0 .3 Bo P 8 ± 0 .1 Ko E 1.75 ± 0 .1 t 5.5 ± 0 .05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0 .1 2.0 ± 0 .05 6.9 ± 0 .1 7.5 ± 0 .1 2.1 ± 0 .1 0.3 ± 0.05 Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 11 www.anpec.com.tw APM3023N Cover Tape Dimensions Application TO- 252 SOT- 223 Carrier Width 16 12 Cover Tape Width 13.3 9.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 12 www.anpec.com.tw