APM3095PUC-TRL

APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS(ON)=95mΩ (typ.) @ VGS=-10V RDS(ON)=140mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) S Applications • Power Management in Desktop Computer or G DC/DC Converters D P-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM3095P Lead Free Code Handling Code Temp. Range Package Code APM3095P U : APM3095P XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM3095PU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 150 °C -55 to 150 °C -2.5 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC TC=25°C -20 TC=100°C -10 TC=25°C -8 TC=100°C -4 TC=25°C 50 TC=100°C 20 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in Pad Area IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA TA=25°C -20 TA=100°C -10 TA=25°C -4 TA=100°C -2 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 TA=25°C -20 TA=100°C -10 TA=25°C -3 TA=100°C -2 TA=25°C 1.6 TA=100°C 0.6 75 A A W °C/W www.anpec.com.tw APM3095PU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM3095PU Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=-250µA V VDS=-24V, VGS=0V -1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±25V, VDS=0V RDS(ON) a Drain-Source On-state Resistance -30 -30 -1 -1.5 µA -2 V ±100 nA VGS=-10V, IDS=-6A 95 110 VGS=-4.5V, IDS=-3A 140 160 ISD=-2.5A, VGS=0V -0.7 -1.3 mΩ Diode Characteristics VSDa Diode Forward Voltage V Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time 13 Ω 550 pF 120 pF 75 pF 10 20 ns 8 20 ns 25 50 ns 5 15 ns 10 13 nC Gate Charge Characteristics b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDS=-15V, VGS=-10V, IDS=-6A 2 nC 1.2 nC a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM3095PU Typical Characteristics Drain Current Power Dissipation 60 10 8 -ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 6 4 2 10 o o 0 TC=25 C 0 20 40 0 60 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance -ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 10 TC=25 C, VG=-10V it im )L n o s( Rd 300us 1 1ms 10ms 100ms 1s 0.1 DC o T =25 C 0.01 C 0.1 1 10 Rev. B.2 - Oct., 2005 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1E-4 100 1E-3 0.01 2 Mounted on 1in pad o RθJA :50 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) Copyright  ANPEC Electronics Corp. 2 4 www.anpec.com.tw APM3095PU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 20 200 VGS=-7,-8,-9,-10V 18 -ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ) -6V 16 14 -5V 12 10 8 -4V 6 4 -3V 160 140 120 80 60 0 2 4 6 8 10 0 8 12 16 -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 20 1.6 IDS =-250µA Normalized Threshold Vlotage 18 16 -ID - Drain Current (A) 4 -VDS - Drain - Source Voltage (V) 20 14 12 10 8 o 6 Tj=125 C o Tj=-55 C 4 o Tj=25 C 2 0 VGS=-10V 100 2 0 VGS=-4.5V 180 0 1 2 1.2 1.0 0.8 0.6 0.4 0.2 3 4 5 0.0 -50 -25 6 Copyright  ANPEC Electronics Corp. 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) Rev. B.2 - Oct., 2005 1.4 5 www.anpec.com.tw APM3095PU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.4 20 VGS = -10V 10 o -IS - Source Current (A) Normalized On Resistance IDS = -6A 2.0 1.6 1.2 0.8 Tj=150 C o Tj=25 C 1 0.4 o 0.0 -50 -25 RON@Tj=25 C: 95mΩ 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 800 VDS=-10V Frequency=1MHz IDS= -6A C - Capacitance (pF) 600 -VGS - Gate-source Voltage (V) 700 Ciss 500 400 300 200 Coss Crss 100 0 0 5 10 15 20 25 Rev. B.2 - Oct., 2005 6 4 2 0 30 0 2 4 6 8 10 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright  ANPEC Electronics Corp. 8 6 www.anpec.com.tw APM3095PU Package Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 D1 A1 E1 Dim Millimeters Inches Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 D1 E 5.2 REF 6.35 E1 0.205 REF 6.73 0.250 5.3 REF 0.265 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 0.020 7 www.anpec.com.tw APM3095PU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 8 www.anpec.com.tw APM3095PU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3