APM4034N

APM4034NU N-Channel Enhancement Mode MOSFET Features • 40V/20A, RDS(ON)= 29mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 5V Pin Description • • • G D S Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 (2) D1 Applications • Inventer Application in LCM and LCD TV (1) G1 S1 (3) N-Channel MOSFET Ordering and Marking Information APM4034N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device APM4034N U : APM4034N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 1 www.anpec.com.tw APM4034NU Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDP ID PD RθJC RθJA Notes： * Current limited by bond wire. Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 40 ±20 150 -55 to 150 20* 40 20 20* 10 50 20 2.5 50 Unit Common Ratings (TA = 25°C Unless Otherwise Noted) V °C °C A A A W °C/W °C/W Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4034NU Min. Typ. Max. 40 1 30 1.5 2 29 45 0.8 16 8 3 ±100 37 62 1.1 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a VGS=0V, IDS=250µA VDS=32V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=10A VGS=5V, IDS=5A ISD=2A, VGS=0V ISD=10A, dISD/dt =100A/µs V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge V ns nC C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 2 www.anpec.com.tw APM4034NU Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM4034NU Min. Typ. Max. 2 500 70 50 4 8 21 32 6 14 11 17 3 Unit Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.0MHz VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=6Ω b Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Notes： 10 VDS=20V, VGS=10V, IDS=10A 1.8 2 Gate-Source Charge Gate-Drain Charge nC a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 3 www.anpec.com.tw APM4034NU Typical Characteristics Power Dissipation 60 25 Drain Current 50 20 40 ID - Drain Current (A) Ptot - Power (W) 15 30 10 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 o 5 TC=25 C,VG=10V 0 0 20 40 60 80 100 120 140 160 o 0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 0.05 0.02 ID - Drain Current (A) Lim it 300us 1ms 10ms 100ms 1s 10 Rd s(o n) 0.1 0.01 1 DC Single Pulse 0.1 0.01 TC=25 C O 0.1 1 10 100 0.01 1E-4 Mounted on 1in pad o RθJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 4 www.anpec.com.tw APM4034NU Typical Characteristics (Cont.) Output Characteristics 40 VGS= 7,8,9,10V 35 6V 30 Drain-Source On Resistance 70 65 VGS=5V RDS(ON) - On - Resistance (mΩ) 60 55 50 45 40 35 30 25 20 15 ID - Drain Current (A) 25 20 15 10 5 0 0.0 5.5V 5V VGS=10V 4.5V 4V 3.5V 0.5 1.0 1.5 2.0 2.5 3.0 10 0 5 10 15 20 25 30 35 40 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance 65 ID=10A Gate Threshold Voltage 1.6 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RDS(ON) - On - Resistance (mΩ) 55 50 45 40 35 30 25 20 Normalized Threshold Vlotage 60 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 5 www.anpec.com.tw APM4034NU Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 1.8 VGS = 10V IDS = 10A 10 40 Source-Drain Diode Forward Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 RON@Tj=25 C: 29mΩ 50 75 100 125 150 o IS - Source Current (A) 1.4 Tj=150 C Tj=25 C 1 o o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 700 Frequency=1MHz 600 9 10 VDS= 20V ID= 10A Gate Charge VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 C - Capacitance (pF) 500 400 300 200 100 Crss 0 0 5 10 15 20 25 Ciss Coss 30 35 40 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 6 www.anpec.com.tw APM4034NU Package Information TO252-3 E b3 L3 A c2 E1 D L4 c b e SEE VIEW A H GAUGE PLANE 0.25 SEATING PLANE A1 L VIEW A S Y M B O L A A1 b b3 c c2 D D1 E E1 e H L L3 L4 0 TO252 MILLIMETERS MIN. 2.18 MAX. 2.39 0.13 0.50 4.95 0.46 0.46 5.33 4.57 6.35 3.81 2.29 BSC 9.40 0.90 0.89 10.41 1.78 2.03 1.02 0° 8° 0° 0.370 0.035 0.035 6.73 0.89 5.46 0.61 0.89 6.22 0.020 0.195 0.018 0.018 0.210 0.180 0.250 0.150 0.090 BSC 0.410 0.070 0.080 0.040 8° 0.265 MIN. 0.086 INCHES MAX. 0.094 0.005 0.035 0.215 0.024 0.035 0.245 C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 7 www.anpec.com.tw D1 0 APM4034NU Carrier Tape t P P1 D Po E F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.5 +0.1 C 13 ± 0. 5 D1 J 2 ± 0.5 Po T1 16.4 + 0.3 -0.2 P1 2.0 ± 0.1 T2 2.5± 0.5 Ao W 16+ 0.3 - 0.1 Bo P 8 ± 0.1 Ko 2.5± 0.1 E 1.75± 0.1 t 0.3±0.05 TO-252 F 7.5 ± 0.1 1.5± 0.25 4.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 8 www.anpec.com.tw APM4034NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsm in Ramp-down ts Preheat 25 t 2 5 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. C opyright © A NPEC Electronics Corp. Rev. A.1 - Mar., 2007 9 www.anpec.com.tw APM4034NU Classification Reflow Profiles (Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volume mm Volume mm