APM4350KPC-TUL

APM4350KP N-Channel Enhancement Mode MOSFET Features • 30V/60A, RDS(ON) =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V Pin Description D D D D S S S G • • • • Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) DD D D Applications • Power Management in Notebook Computer, or Decktop Computer. G SSS N-Channel MOSFET Ordering and Marking Information APM4350 Lead Free Code Handling Code Temp. Range Package Code Package Code KP : KPAK Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4350 KP : APM4350 XXXXX Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM4350KP Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDP (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 30 ±20 150 -55 to 150 50 140 80 60 35 50 20 2.5 TA=25°C TA=100°C TA=25°C TA=100°C Unit Common Ratings (TA=25°C Unless Otherwise Noted) V °C °C A A Mounted on Large Heat Sink ID PD RθJC Continuous Drain Current A Maximum Power Dissipation Thermal Resistance-Junction to Case 2 W °C/W Mounted on PCB of 1in pad area ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°°C TA=25°C TA=100°C 13.5 8.5 2.5 1 50 10 6 1.5 0.5 75 W °C/W W °C/W A Mounted on PCB of Minimum Footprint ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM4350KP Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Condition APM4350KP Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a VGS=0V, IDS=250µA VDS=24V, VGS=0V Tj=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=30A VGS=4.5V, IDS=15A ISD=15A, VGS=0V IDS=15A, dlSD/dt=100A/µs 30 1 30 1.3 1.8 7.5 11.5 2.5 ±100 9 14.5 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics VSD trr Qrr a Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge b 0.75 11 3 1.1 V ns nC Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge b 28 VDS=15V, VGS=10V, IDS=30A 4 9 39 nC Gate-Source Charge Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Note： VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 1.6 1660 260 170 18 15 47 22 33 28 86 41 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM4350KP Typical Characteristics Power Dissipation 60 Drain Current 70 60 50 Ptot - Power (W) 40 ID - Drain Current (A) 50 40 30 20 10 30 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 o 0 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 400 2 1 Thermal Transient Impedance 100 ID - Drain Current (A) it im )L on s( Rd Duty = 0.5 0.2 0.1 0.05 1ms 10ms 100ms 1s DC 10 0.1 0.02 0.01 1 0.1 0.1 TC=25 C 1 10 80 o Single Pulse 0.01 1E-4 1E-3 0.01 0.1 Mounted on 1in pad o RθJA :50 C/W 2 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Output Characteristics 120 VGS= 6,7,8,9,10V 5.5V 100 4.5V 5V Drain-Source On Resistance 20 18 RDS(ON) - On - Resistance (mΩ) 16 14 12 10 8 6 4 VGS=4.5V ID - Drain Current (A) 80 60 4V 40 3.5V 20 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS=10V 2 0 20 40 60 80 100 120 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance 18 ID=30A 16 Gate Threshold Voltage 1.8 1.6 IDS =250µA RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 14 12 10 8 6 4 1 2 3 4 5 6 7 8 9 10 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 1.6 VGS = 10V IDS = 30A Source-Drain Diode Forward 100 Normalized On Resistance 1.4 IS - Source Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 7.5mΩ 0 25 50 75 100 125 150 o 10 Tj=150 C Tj=25 C o o 1 0.2 0.0 0.3 0.6 0.9 1.2 1.5 1.8 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 2500 Frequency=1MHz 10 VDS= 15V IDS= 30A Gate Charge 2000 VGS - Gate - source Voltage (V) 8 C - Capacitance (pF) Ciss 1500 6 1000 4 500 Coss Crss 0 0 5 10 15 20 25 30 2 0 0 5 10 15 20 25 30 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 6 www.anpec.com.tw APM4350KP Avalanche Test Circuit and Waveforms VDS L DUT RG VDD IL tp 0.01Ω Switching Time Test Circuit and Waveforms VDS RD VDS DUT VGS RG VDD 10% tp 90% VGS td(on) tr td(off) tf C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM4350KP Packaging Information KPAP (Reference JEDEC Registration MS-012) 8 8 7 6 5 F F1 E1 E 1 2 3 4 1 G 2 3 4 G1 D a 7 6 5 Dim A B C D E E1 e F F1 G G1 H K a Millimeters Min. Max. 1.00 1.20 0.38 0.51 0.19 0.25 4.80 5.00 5.90 6.10 5.696 5.796 1.27 BSC 0.052 0.152 0.352 0.452 0.052 0.152 0.352 0.452 3.491 3.691 1.60 0° 12° C e B A K Inches Min. Max. 0.039 0.047 0.015 0.020 0.007 0.010 0.189 0.197 0.232 0.240 0.224 0.228 0.050 BSC 0.002 0.006 0.014 0.018 0.002 0.006 0.014 0.018 0.137 0.145 0.063 0° 12° Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 8 www.anpec.com.tw C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 H APM4350KP Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone TL to TP Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25° to Peak C Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Time 25°C to Peak Temperature Sn-Pb Eutectic Assembly Large Body Small Body 3°C/second max. 100°C 150°C 60-120 seconds Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 183°C 60-150 seconds 225 +0/-5°C 10-30 seconds 240 +0/-5°C 10-30 seconds 217°C 60-150 seconds 245 +0/-5°C 10-30 seconds 250 +0/-5°C 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface. C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM4350KP Package Refolw Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0° C VPR 215-219° C IR/Convection 220 +5/-0° C pkg. thickness < 2.5mm and 3 pkg. volume ≥ 350mm pkg. thickness < 2.5mm and pkg. 3 volume < 350mm Convection 235 +5/-0° C VPR 235 +5/-0° C IR/Convection 220 +5/-0° C Reliability test program Test Item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko T2 J C A B T1 C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw APM4350KP Carrier Tape & Reel Dimensions(Cont.) Application A 330±1 SOP- 8 F 5.5±1 B 62+1.5 D C 12.75+ 0.15 D1 J 2±0.5 Po 4.0±0.1 T1 12.4±0.2 P1 2.0±0.1 T2 2±0.2 Ao 6.4±0.1 W 12±0. 3 Bo 5.2±0. 1 P 8±0.1 Ko E 1.75±0.1 t 1.55+0.1 1.55+0.25 2.1±0.1 0.3±0.013 Cover Tape Dimensions Application SOP-8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 C opyright © A NPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw