APM4408

APM4408 N-Channel Enhancement Mode MOSFET Features • 20V/21A, RDS(ON) = 3.5mΩ(typ.) @ VGS = 10V RDS(ON) = 5mΩ(typ.) @ VGS = 4.5V RDS(ON) = 8mΩ(typ.) @ VGS = 2.5V Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D • • • High Density Cell Design Reliable and Rugged SO-8 Package SO − 8 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G S Ordering and Marking Information APM 4408 H a n d lin g C o d e Tem p. R ange P ackage C ode N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 4408 K : APM 4408 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 21 60 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 1 www.anpec.com.tw APM4408 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθJA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.6 0.625 150 -55 to 150 80 W °C °C °C/W Unit Electrical Characteristics S y mbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a a (TA = 25°C unless otherwise noted) APM4408 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250 µ A V DS =18V , V GS =0V V DS =V GS , IDS=250 µ A V GS = ± 16V , V DS =0V V GS =10V , I DS =21A V GS =4.5V , IDS =17A V GS =2.5V , IDS =10A 20 1 0.8 3.5 5 8 0.6 45 20 17 35 19 110 60 5300 1000 300 1.5 ± 100 4.5 6 10 1.3 65 V µA V nA mΩ V V SD ISD=2.9A , V GS =0V V DS =10V , IDS = 21A V GS =4.5V , Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss N otes a b Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC 50 28 170 75 V DD=10V , IDS =1A , V GEN =4.5V , R G =6 Ω V GS =0V V DS =15V Frequency=1.0MHz ns pF : G uaranteed by design, not subject to production testing : P ulse test ; pulse width ≤ 300 µ s, duty cycle ≤ 2 % Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 2 www.anpec.com.tw APM4408 Typical Characteristics Output Characteristics 50 VGS=4,5,6,7,8,9,10V Transfer Characteristics 50 IDS-Drain Current (A) IDS-Drain Current (A) 40 40 30 30 20 V GS=3V 20 TJ=25°C TJ=-55°C TJ=125°C 10 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250µA On-Resistance vs. Drain Current 0.008 VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.007 0.006 VGS=4.5V 0.005 0.004 0.003 0.002 0.001 VGS=10V -25 0 25 50 75 100 125 150 0.000 0 10 20 30 40 50 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 3 www.anpec.com.tw APM4408 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.020 IDS=21A On-Resistaence vs. Junction Temperature 2.00 VGS=10V IDS=21A RDS (ON)-On-Resistance (Ω) 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 0.018 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 8000 VDS=10V IDS=21A Capacitance Characteristics Frequency=1MHz VGS-Gate-to-Source Voltage (V) 7000 C-Capacitance (pF) 8 6000 5000 4000 3000 2000 Ciss 6 4 2 1000 0 0 10 20 30 40 50 60 70 80 90 0 0 5 Coss Crss 10 15 20 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 4 www.anpec.com.tw APM4408 Typical Characteristics Cont. Source-Drain Diode Forward Voltage 50 100 Single Pulse Power ISD-Source Current (A) 10 80 Power (W) 1.2 1.4 1.6 60 TJ=150°C TJ=25°C 40 20 1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 VSD-Source to Drain Voltage Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 5 www.anpec.com.tw APM4408 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 6 www.anpec.com.tw APM4408 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) JEDEC Standard J-STD-020A APRIL 1999 Reference temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 7 APM4408 R e lia b ilit y te s t p r o g r a m Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 °C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 ° C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C -6 5 ° C ~ 1 5 0 ° C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A Carrier Tape Po E P1 P D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2± 0. 1 P 8± 0.1 Ko E 1.75±0.1 t SOP- 8 F 5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1± 0.1 0.3±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 8 www.anpec.com.tw APM4408 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 9 www.anpec.com.tw