APM4410KC-TU

APM4410 N-Channel Enhancement Mode MOSFET Features • • • • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SO − 8 D G Ordering and Marking Information APM 4410 H a n d lin g C o d e Tem p. R ange P ackage C ode S N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 4410 K : APM 4410 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM PD Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 11.5 50 TA=25°C TA=100°C 2.5 1.0 W Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 1 www.anpec.com.tw APM4410 Thermal Characteristics Symbol TJ T STG R θJA Parameter Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient Rating 150 -55 to 150 50 Unit °C °C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Dynamica Qg Q gs Q gd td(ON) tr td(OFF) tf Ciss Coss Crss Notes a b (TA=25°C unless otherwise noted) Test Condition APM4410 Unit Min. Typa. Max. 30 1 1 9 14.5 0.6 45 10 8 16 VDD=15V, RL=15Ω, ID=1A , V GEN=10V, RG=6Ω, VGS =0V, VDS=25V Frequency = 1.0MHZ 24 78 42 2000 400 220 pF 25 35 110 80 ns 3 ±100 11 16 1.2 60 nC V uA V nA mΩ V Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance b Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance b VGS =0V, ID=250µ A VDS =24V, VGS =0V VDS =VGS, ID=250µA VGS =±20V, VDS =0V VGS =10V, ID=11.5A VGS =4.5V, ID=5A ISD=2.3A, VGS =0V VDS =15V, VGS =10V, ID=10A : G uaranteed by design, not subject to production testing : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 2 www.anpec.com.tw APM4410 Typical Characteristics Output Characteristics 50 VGS=5,6,7,8,9,10V Transfer Characteristics 50 IDS-Drain Current (A) 40 VGS=4V 40 30 20 IDS-Drain Current (A) 30 20 TJ=25°C TJ=125°C TJ=-55°C 10 V GS=3V 10 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.4 IDS=250µA On-Resistance vs. Drain Current 0.020 VGS(th)-Threshold Voltage (V) (Normalized) 1.2 1.0 0.8 0.6 0.4 0.2 -50 RDS(ON)-On-Resistance (Ω) 0.016 VGS=4.5V 0.012 0.008 V GS=10V 0.004 -25 0 25 50 75 100 125 150 0.000 0 5 10 15 20 25 30 35 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 3 www.anpec.com.tw APM4410 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.10 IDS=11.5A On-Resistaence vs. Junction Temperature 2.00 VGS=10V IDS=11.5A RDS (ON)-On-Resistance (Ω) 0.08 RDS(ON)-On-Resistance (Ω) (Normalized) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.06 0.04 0.02 0.00 0 2 4 6 8 10 0.00 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 3000 VDS=15V IDS=11.5A Capacitance Characteristics VGS-Gate-to-Source Voltage (V) C-Capacitance (pF) 8 2500 Ciss 2000 1500 1000 500 0 Coss Crss 6 4 2 0 0 9 18 27 36 45 0 5 10 15 20 25 30 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 4 www.anpec.com.tw APM4410 Typical Characteristics Cont. Source-Drain Diode Forward Voltage 50 80 Single Pulse Power ISD-Source Current (A) 60 10 Power (W) 1.2 1.4 40 TJ=150°C TJ=25°C 20 1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 VSD-Source to Drain Voltage Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 5 www.anpec.com.tw APM4410 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 6 www.anpec.com.tw APM4410 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 7 APM4410 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D W F Bo Ao D1 T2 Ko J C A B T1 A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Application SOP-8 Application SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 8 www.anpec.com.tw APM4410 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.5 - July., 2002 9 www.anpec.com.tw