APM4412K

APM4412K N-Channel Enhancement Mode MOSFET Features • 30V/12A, RDS(ON) = 9mΩ (typ.) @ VGS = 10V RDS(ON) =12mΩ (typ.) @ VGS = 4.5V Pin Description • • • • Super High Dense Cell Design Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) ( 5,6,7,8 ) D D DD Top View of SOP − 8 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (4) G SS S (1, 2, 3) N-Channel MOSFET Ordering and Marking Information APM4412 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4412 K : APM4412 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 1 www.anpec.com.tw APM4412K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Rating 30 ±20 VGS=10V 12 45 2 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 W °C/W A °C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4412K Min. 30 1 30 1.3 1.7 9 12 0.75 24.5 VDS=15V, VGS=10V, IDS=12A 4 8 2.5 ±100 12 16 1.3 32 nC Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSDa a VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=8A ISD=2.3A, VGS=0V V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge Gate-Source Charge Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 2 www.anpec.com.tw APM4412K Electrical Characteristics (Cont.) Symbol Parameter (T A = 25°C unless otherwise noted) APM4412K Min. Typ. 2.3 1470 233 157 13 24 17 66 23 ns nC ns 9 36 12 14 5 pF Max. Test Condition Unit Dynamic Characteristicsb RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf trr Qrr Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω ISD=12A, dISD/dt =100A/µs Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 3 www.anpec.com.tw APM4412K Typical Characteristics Power Dissipation 2.5 14 12 Drain Current 2.0 1.5 ID - Drain Current (A) 10 8 6 4 2 Ptot - Power (W) 1.0 0.5 o o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 ID - Drain Current (A) 10 Rd s(o n) Lim it 300us 1ms 0.1 0.05 0.02 0.01 1 10ms 100ms 0.01 Single Pulse 0.1 1s DC o T =25 C 0.01 A 0.01 0.1 1 10 100 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 4 www.anpec.com.tw APM4412K Typical Characteristics (Cont.) Output Characteristics 45 40 35 VGS= 4,5,6,7,8,9,10V 20 18 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 16 14 12 10 8 6 4 2 VGS=10V VGS=4.5V ID - Drain Current (A) 30 25 20 15 10 5 0 0.0 3.5V 3V 0.5 1.0 1.5 2.0 2.5 3.0 0 9 18 27 36 45 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 45 40 Gate Threshold Voltage 2.0 1.8 IDS =250µA Normalized Threshold Voltage 35 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ID - Drain Current (A) 30 25 20 15 10 5 0 Tj=125 C Tj=25 C o o Tj=-55 C o 0 1 2 3 4 5 6 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 5 www.anpec.com.tw APM4412K Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 12A Tj=150 C 10 o o Source-Drain Diode Forward 50 Normalized On Resistance 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 9mΩ 0 25 50 75 100 125 150 o IS - Source Current (A) Tj=25 C 1 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 2400 2100 Frequency=1MHz 10 9 VDS= 15V ID = 12A Gate Charge VGS - Gate - source Voltage (V) 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 1800 C - Capacitance (pF) 1500 1200 900 600 300 Crss 0 0 5 10 15 20 Coss Ciss 25 30 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 6 www.anpec.com.tw APM4412K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8° Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45 Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8° Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 7 www.anpec.com.tw APM4412K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 8 www.anpec.com.tw APM4412K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 P ackage Thickness Volume mm Volume mm < 350 ≥ 350 < 2.5 mm 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 9 www.anpec.com.tw APM4412K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2 ± 0.1 P 8 ± 0.1 E 1.75± 0.1 SOP-8 D D1 Po 1.55 ±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1 ± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 10 www.anpec.com.tw