APM4416KCTR

APM4416 N-Channel Enhancement Mode MOSFET Features • • • • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description SO-8 S S S G 1 2 3 4 8 7 6 5 D D D D Top View Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G D Ordering and Marking Information APM 4416 H a n d lin g C o d e Tem p. R ange P ackage C ode S N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 4416 K : A P M 4416 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 8 32 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM4416 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 W °C °C °C/W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM4416 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA VGS=±20V , VDS=0V VGS=10V , IDS=4A VGS=4.5V , IDS=2A ISD=2A , VGS=0V VDS=15V , IDS= 10A VGS=5V 30 1 5 1 15 22 0.6 15 5.8 3.8 11 18 26 54 30 3 ±100 18 30 1.3 20 V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC VDD=15V , IDS=2A , VGEN=10V , RG=6Ω VGS=0V VDS=15V 17 37 20 1150 230 100 ns pF Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 2 www.anpec.com.tw APM4416 Typical Characteristics Output Characteristics 30 40 Transfer Characteristics VGS=5,6,7,8,9,10V 25 IDS-Drain Current (A) IDS-Drain Current (A) 30 20 V GS=4V 15 20 TJ=25°C 10 VGS=3.5V V GS=3V 10 TJ=125°C TJ=-55°C 5 0 0 2 4 6 8 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 On-Resistance vs. Drain Current 0.040 VGS(th)-Threshold Voltage (V) (Normalized) IDS=250µA 1.0 RDS(ON)-On-Resistance (Ω) 0.035 0.030 VGS=4.5V 0.025 0.020 0.8 VGS=10V 0.015 0.010 0.005 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.000 0 5 10 15 20 25 30 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 3 www.anpec.com.tw APM4416 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.045 On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) 1.6 IDS=4A RDS (ON)-On-Resistance (Ω) 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 10 VGS=10V IDS=4A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 2000 Capacitance Characteristics VGS-Gate-to-Source Voltage (V) VDS=15V IDS=10A C-Capacitance (pF) 8 1000 Ciss 500 6 Coss 4 2 100 Crss Frequency=1MHz 0 0 5 10 15 20 25 30 0.1 1 10 30 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 4 www.anpec.com.tw APM4416 Typical Characteristics Cont. Source-Drain Diode Forward Voltage 100 Single Pulse Power 60 50 ISD-Source Current (A) 10 40 Power (W) 1.2 1.4 30 1 TJ=125°C TJ=25°C TJ=-55°C 20 10 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 10 -2 10 -1 10 0 10 1 10 2 VSD-Source to Drain Voltage Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted -3 -2 -1 0 1 2 D=0.02 SINGLE PULSE 0.01 -4 10 10 10 10 10 10 10 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 5 www.anpec.com.tw APM4416 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 6 www.anpec.com.tw APM4416 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 7 APM4416 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t P P1 D Po E F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2± 0. 1 P 8± 0.1 Ko E 1.75±0.1 t SOP- 8 F 5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1± 0.1 0.3±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 8 www.anpec.com.tw 8 APM4416 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 9 www.anpec.com.tw