APM4429KTU-CK

APM4429 P-Channel Enhancement Mode MOSFET Features • -30V/-13A, RDS(ON) = 8mΩ(typ.) @ VGS = -20V RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V Pin Description 5 5 5  & % , , , , ! " $ # • • • Super High Density Cell Design Reliable and Rugged SO-8 Package / SO − 8 S SS Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G Ordering and Marking Information APM 4429 L e a d F re e C o d e H a n d lin g C o d e Tem p. R ange P ackage C ode DD DD P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n d : O rg in a l D e v ic e X X X X X - D a te C o d e APM 4429 K : APM 4429 XXXXX Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25°C unless otherwise noted) Rating -30 ±20 TA = 25°C -13 -50 Unit V A Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed IDM * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  A NPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM4429 Absolute Maximum Ratings Symbol PD TJ)TSTG * RθJA (TA = 25°C unless otherwise noted) Rating TA = 25°C TA = 100°C 2.5 1.0 -55 to 150 62.5 Unit W °C °C/W Parameter Maximum Power Dissipation Maximum Operating and Storage Junction Temperature Thermal Resistance - Junction to Ambient Electrical Characteristics S ym b o l S tatic B V DSS ID S S V G S (th) IG S S R D S (O N ) V SD D yn am ic = Qg Q gs Q gd t d (O N ) Tr t d (O F F ) Tf C iss C o ss C rss Total G ate C harge G ate-S ource C harge G ate-D rain C harge T urn-on D ela y Tim e T urn-on R ise Tim e T urn-off D ela y Tim e T urn-off F all Tim e I nput C apacitance O utput C apacitance D rain-S ource B reak dow n Voltage Z ero G ate Voltage D rain C urren t G ate T hreshold Volta ge G ate Le ak age C urren t D rain-S ource O n-state R esista nce > (TA = 25°C unless otherwise noted) Test C o n d itio n AP M 44 29 Typ = . M ax. M in . -30 -1 -1 -1.5 8 9 13 -0.7 105 10.8 13.6 15 20 55 40 4730 800 240 pF 30 30 85 65 ns -2 ± 100 11 12 17 -1.3 135 nC V mΩ U n it P aram eter V G S =0V , I D S =-250 µ A V D S =-24V , V G S =0V V D S =V G S , I D S =-250 µ A V G S = ± 20V , V D S =0V V G S =-20V , I D S =-13A V G S =-10V , I D S =-13A V G S =-4.5V , I D =-12A V µA V nA D iode F orw ard Voltag e > I S D =-3A , V G S =0V V D S =-15V , V G S = -10V l D = -13A V D D =-15V , I D =-1A , V G E N =-10V , R G =6 Ω R L =15 Ω V G S =0V V D S =-25V R evers e Transfer C a pacitance F requen cy=1.0M H z    Notesa  b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2 www.anpec.com.tw APM4429 Typical Characteristics 50 Output Characteristics  -VGS= 4,5,6,7,8,9,10V 50 Transfer Characteristics  -ID-Drain Current (A) 40 -VGS=3V 30 40 -ID-Drain Current (A) 30 Tj=125 C  20 -VGS=2.5V 10 -VGS=2V 0 2 4 6 8 10 20 10 Tj=25 C Tj=-55 C o o 0 0 -VDS - Drain-to-Source Voltage (V) 0 -VGS - Gate-to-Source Voltage (V) 1 2 3 4 Threshold Voltage vs. Junction Temperature 1.75  On-Resistance vs. Drain Current 0.030  -VGS(th)-Threshold Voltage (V) (Normalized) -IDS =250µA 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 RDS(on)-On-Resistance (Ω)  1.50 0.025 0.020 0.015 0.010 0.005 0.000 -VGS=4.5V -VGS=10V -VGS=20V  0 20 40 60 80 100 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 3 www.anpec.com.tw  o APM4429 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage  0.08 -ID= 13A On-Resistance vs. Junction Temperature 1.75  RDS(on)-On-Resistance (Ω)  RDS(on)-On-Resistance (Ω)  (Normalized) 0.06 1.50 1.25 1.00 0.75 0.50 -50 -VGS = 10V -ID = 13A 0.04  0.02 0.00 0 5 10 15 20 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V)   TJ - Junction Temperature (°C) Gate Charge 10 -VDS= 15 V -ID= 13 A 7000 6000 Capacitance  Frequency=1MHz -VGS-Gate-Source Voltage (V) 8 6 Capacitance (pF) 5000 4000 3000 2000 1000 Ciss 4 2 Coss Crss 0 5 10 15 20 25 30 0 0 30 60 90 120 0 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 4 www.anpec.com.tw   APM4429 Typical Characteristics Source-Drain Diode Forward Voltage 50  Single Pulse Power 120  -IS-Source Current (A) 10 Tj=150 C o 90 Power (W)  1 Tj=25 C o 30 0.1 0.0 0.4 0.8 1.2 1.6 2.0 0 0.01 0.1 1 10 30 -VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient  Normalized Effective Transient Thermal Impedance 2 1 0.1 Duty Cycle=0.5 D=0.2 D=0.1 0.01 D=0.05 1.Duty Cycle, D= t1/t2 D=0.02 SINGLE PULSE 1E-3 1E-4 2.Per Unit Base=RthJA=62.5 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted o 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 5 www.anpec.com.tw   60 APM4429 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27BSC 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50BSC 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 6 www.anpec.com.tw APM4429 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 7 APM4429 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 Bo D t W F Ao D1 T2 Ko J A C B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 T2 2 ± 0.2 Ao W 12± 0. 3 Bo 5.2± 0. 1 P 8± 0.1 Ko E 1.75±0.1 t SOP- 8 F 5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 2.1± 0.1 0.3±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 8 www.anpec.com.tw APM4429 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 9 www.anpec.com.tw