APM4430

APM4430 N-Channel Enhancement Mode MOSFET Features • • • • 30V/23A , RDS(ON)=4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description 4 3 2 1 5 6 7 8 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems . SO − 8 Ordering and Marking Information APM 4430 H a n d lin g C o d e Tem p. R ange P ackage C ode P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 4430 K : APM 4430 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Parameter (TA = 25°C unless otherwise noted) Rating 30 V ±20 23 A ± 60 Unit ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 1 www.anpec.com.tw APM4430 Absolute Maximum Ratings Symbol PD TJ TSTG RthJA Parameter Maximum Power Dissipation* Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA = 25°C TA = 70°C (TA = 25°C unless otherwise noted) Rating 1.6 W 0.625 150 °C -55 to 150 80 °C/W Unit * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS Drain-Source Breakdown IDSS Zero Gate Voltage Drain Current Parameter (TA=25°C unless otherwise noted) Test Condition APM4430 Min. Typ. Max. Unit VGS=0V, ID=250µA VDS=24V, VGS=0V VDS =24V, VGS =0V, T j = 55°C VDS=VGS, ID=250µA VGS=±20V, VDS=0V VGS=10V, ID=23A VGS=5V, ID=17A IS=6A, VGS=0V 30 1 5 1 3 V µA µA V VGS(th) Gate Threshold Voltage IGSS RDS(ON) VSD Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage ±100 nA 4.5 7 0.6 5 8 1.1 mΩ V Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 2 VDS=15V, VGS=4.5V, ID=23A 40 17 14 30 55 nC nC nC 45 24 ns ns ns ns pF pF pF VDD=15V, ID=1A, VGEN=10V, RG=0.2Ω 16 100 150 55 4800 900 320 70 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 www.anpec.com.tw APM4430 Typical Characteristics Output Characteristics 80 70 VGS=5,6,7,8,9,10V VGS=4.5V V GS=4V Transfer Characteristics 60 48 36 TJ=25°C ID-Drain Current (A) 60 50 40 30 20 10 ID-Drain Current (A) 24 TJ=125°C TJ=-55°C 12 0 1.0 V GS=3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.5 2.0 2.5 3.0 3.5 4.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID=250uA On-Resistance vs. Drain Current 0.010 RDS(on)-On-Resistance(Ω) 0.2 VGS(th)-Variance (V) 0.008 0.006 V GS=5V 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 -25 0 25 50 75 100 125 150 VGS=10V 0.004 0.002 0.000 0 10 20 30 40 50 60 TJ-Junction Temperature (°C) ID-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 3 www.anpec.com.tw APM4430 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.016 ID=23A On-Resistance vs. Junction Temperature 0.008 V GS=10V ID = 23A RDS(on)-On Resistance (Ω) 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 2 4 6 8 10 RDS(on)-On Resistance (Ω) 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0.000 -50 -25 0 25 50 75 100 125 150 VGS-Gate-to-Source Voltage (V) TJ-Junction Temperature (°C ) On-Resistance vs. Junction Temperature 1.8 Gate Charge 10 VDS=15V ID = 23A 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 VGS-Gate-Source Voltage (V) 25 50 75 100 125 150 RDS(on)-On-Resistance(Ω) (Normalized) V GS=10V ID = 23A 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 0 TJ-Junction Temperature (°C) QG-Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 4 www.anpec.com.tw APM4430 Typical Characteristics Capacitance 7000 6000 70 Source-Drain Diode Forward Voltage Capacitance (pF) 5000 4000 3000 2000 1000 0 0 5 10 15 20 Ciss IS-Source Current (Α) 10 TJ=150°C TJ=25°C Coss Crss 25 30 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VDS-Drain-to-Source Voltage (V) VDS-Source-to-Drain Voltage (V ) Single Pulse Power 60 100 50 ID M ID Safe Operation Area ID-Drain Current (A) 10us Power (W) 40 30 20 10 0 -2 10 10 100us 1ms 1 10ms 100ms VG S =10V Single Pulse TC=25°C 0.1 DC 10 -1 10 0 10 1 10 2 0.01 0.01 0.1 1 10 100 Time (sec) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 5 www.anpec.com.tw APM4430 Typical Characteristics S 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 -4 10 10 -3 1.Duty Cycle,D=t1/t2 2.Per Unit Base=R thJA=80°C 3.TJM-TA=PD MZ t h J A 4.Surface Mounted 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 6 www.anpec.com.tw APM4430 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 7 www.anpec.com.tw APM4430 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 8 APM4430 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application SOP-8 Application SOP-8 A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 9 www.anpec.com.tw APM4430 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 10 www.anpec.com.tw