APM4435KC-TRL

APM4435K P-Channel Enhancement Mode MOSFET Features • -30V/-8A , RDS(ON)=16mΩ(typ.) @ VGS=-10V RDS(ON)=24m Ω(typ.) @ VGS=-4.5V Pin Description • • • • Super High Dense Cell Design Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) Top View of SOP − 8 (1, 2, 3) S SS Applications (4) G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems DD DD (5, 6, 7, 8) P-Channel MOSFET Ordering and Marking Information APM4435 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4435 K : APM4435 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 1 www.anpec.com.tw APM4435K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=-10V Rating -30 ±25 -8 -30 -3 150 -55 to 150 2 0.8 62.5 Unit V A A °C W °C/W Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4435K Min. -30 -1 -30 -1 -1.5 16 24 -0.8 10 3200 560 250 16 VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω, 17 75 31 2 Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=-250µA VDS=-24V, VGS=0V TA=25°C VDS=VGS, IDS=-250µA VGS=±25V, VDS=0V VGS=-10V, IDS=-8A VGS=-4.5V, IDS=-5A ISD=-3A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz V µA V nA mΩ V Ω pF 30 32 136 57 www.anpec.com.tw Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b -2 ±100 20 30 -1.3 Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 APM4435K Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM4435K Min. Typ. 48 Max. 60 nC Test Condition Unit Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Notes: Gate-Source Charge Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-8A 10 9 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 3 www.anpec.com.tw APM4435K Typical Characteristics Power Dissipation 2.5 10 Drain Current 2.0 8 1.5 -ID - Drain Current (A) Ptot - Power (W) 6 1.0 4 0.5 o 2 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 -ID - Drain Current (A) 10 Rd s(o n) Lim it 1ms 0.1 0.1 0.05 0.02 0.01 10ms 1 100ms 1s 0.01 Single Pulse Mounted on 1in pad o RθJA : 62.5 C/W 2 0.1 DC 0.01 0.01 TA=25 C 0.1 1 10 100 O 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 4 www.anpec.com.tw APM4435K Typical Characteristics (Cont.) Output Characteristics 30 VGS= -4, -5, -6, -7, -8, -9, -10V Drain-Source On Resistance 40 35 RDS(ON) - On - Resistance (mΩ) 25 30 VGS= -4.5V 25 20 VGS= -10V 15 10 5 0 -ID - Drain Current (A) 20 VGS= -3V 15 10 5 0 0 2 4 6 8 10 0 5 10 15 20 25 30 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 30 2.0 1.8 Gate Threshold Voltage IDS = -250µA Normalized Threshold Voltage 5 25 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -ID - Drain Current (A) 20 15 Tj=125 C Tj=-55 C o o 10 5 Tj=25 C o 0 0 1 2 3 4 0.0 -50 -25 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 5 www.anpec.com.tw APM4435K Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 VGS = -10V 1.75 IDS = -8A Source-Drain Diode Forward 30 Normalized On Resistance 10 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 16mΩ 0 25 50 75 100 125 150 o Tj=150 C o -IS - Source Current (A) Tj=25 C 1 o 0.1 0.0 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 5000 4500 Frequency=1MHz Gate Charge 10 VD= -15V 9 I = -8A D -VGS - Gate-source Voltage (V) 4000 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 C - Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 Crss 0 5 10 15 20 Coss Ciss 25 30 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 6 www.anpec.com.tw APM4435K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8° Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45 Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8° Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 7 www.anpec.com.tw APM4435K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 8 www.anpec.com.tw APM4435K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 P ackage Thickness Volum e m m Volume mm < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2.5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 9 www.anpec.com.tw APM4435K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 10 www.anpec.com.tw