APM4461

APM4461 P-Channel Enhancement Mode MOSFET Features • -20V/-7A, RDS(ON) = 25mΩ(typ.) @ VGS = -10V RDS(ON) = 35mΩ(typ.) @ VGS = -4.5V RDS(ON) = 55mΩ(typ.) @ VGS = -2.5V Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D • • • Super High Density Cell Design Reliable and Rugged SOP-8 Package SO − 8 S SS Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems DD DD G P-Channel MOSFET Ordering and Marking Information APM 4461 H a n d lin g C o d e Tem p. Range Package Code Package Code K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel AP M 4461 K : AP M 4461 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -20 ±20 -7 Unit V A Maximum Drain Current – Continuous ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM4461 Absolute Maximum Ratings (Cont.) Symbol IDM PD TJ TSTG R θJA Parameter Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25 ºC TA=100 ºC (TA = 25°C unless otherwise noted) Rating -25 2.5 1.0 150 -55 to 150 50 Unit A W ºC ºC ºC/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) V a SD b a (TA = 25°C unless otherwise noted) APM4461 Min. -20 -1 -0.6 25 35 55 -0.7 17.8 4 5.2 10 VDD=-10V , IDS=-2A , VGEN=-4.5 V , RG=0.2Ω VGS=0V VDS=-15V Frequency=1.0MHz 15 32 15 1240 340 216 pF 15 20 26 25 ns -1.5 ±100 35 50 65 -1.3 21 nC V m[ Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage VGS=0V , IDS=-250A Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V VGS=-10V , IDS=-7A VGS=-4.5V , IDS=-4A VGS=-2.5V , IDS=-2A ISD=-2A, VGS=0V VDS=-10V , VGS=-4.5V, IDS=-2A V µA V nA Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Notes a b Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% 2 www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 APM4461 Typical Characteristics Output Characteristics 25 25 Transfer Characteristics -ID-Drain Current (A) 20 -VGS=3,4,5,6,7,8,9,10V 20 15 10 -V GS=2V -ID-Drain Current (A) TJ=25°C 15 10 TJ=125°C TJ=-55°C 5 5 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -VDS-Drain-to-Source Voltage (V) -VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 0.06 -IDS=250µA On-Resistance vs. Drain Current -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 0.05 0.04 0.03 0.02 0.01 0.00 -VGS=4.5V -V GS=10V 100 125 150 0 5 10 15 20 25 Tj-Junction Temperature (°C) -IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 3 www.anpec.com.tw APM4461 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.30 -IDS=7A On-Resistaence vs. Junction Temperature 1.8 -VGS=10V -IDS=7A RDS (ON)-On-Resistance (Ω) 0.25 0.20 0.15 0.10 0.05 0.00 RDS(ON)-On Resistance (Ω) (Normalized) 1 2 3 4 5 6 7 8 9 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 -VGSj-Gate-to-Source Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 1800 -VDS=10V -IDS=2A Capacitance Characteristics Frequency=1MHz -VGS-Gate-to-Source Voltage (V) 1600 1400 8 C-Capacitance (pF) Ciss 1200 1000 800 600 400 200 Coss Crss 6 4 2 0 0 5 10 15 20 25 30 35 0 0 5 10 15 20 QG-Total Gate Charge (nC) -VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 4 www.anpec.com.tw APM4461 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 25 10 50 60 Single Pulse Power -IS-Source Current (A) 1 TJ=150°C TJ=25°C Power (W) 1.2 1.4 40 30 20 10 0 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 30 -VSD-Source to Drain Voltage Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 5 www.anpec.com.tw APM4461 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 6 www.anpec.com.tw APM4461 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 7 APM4461 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape Po E P P1 D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 8 www.anpec.com.tw APM4461 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 9 www.anpec.com.tw