APM4500KC-TR

APM4500 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V SO-8 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package G1 G2 D1 D1 S2 Applications S1 D2 D2 • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4500 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM4500 K : APM4500 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw APM4500 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RθjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C (TA = 25°C unless otherwise noted) N-Channel 20 ±12 8 35 2.5 1.0 150 -55 to 150 62.5 P-Channel -20 ±12 -4.3 -17 2.5 1.0 Unit V A W °C °C °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Parameter (TA = 25°C unless otherwise noted) APM4500 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 22 30 80 105 0.8 -0.7 0.5 0.7 P-Ch -0.45 20 -20 1 -1 1 -1 ±100 ±100 26 36 90 115 1.3 -1.3 V mΩ nA Test Condition VGS=0V , IDS=250µA VDS=16V , VGS=0V VDS=-16V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±12V , VDS=0V VGS=±12V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=5.2A VGS=-4.5V , IDS=-4.3A VGS=-2.5V , IDS=-2A ISD=1.7A , VGS=0V ISD=-1.25A , VGS=0V V µA V RDS(ON)a Drain-Source On-state Resistance VSDa Diode Forward Voltage Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 2 www.anpec.com.tw APM4500 Electrical Characteristics (Cont.) Symbol Dynamicb Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz N-Channel VDS=10V , IDS= 8A VGS=4.5V P-Channel VDS=-10V , IDS=-3A VGS=-4.5V N-Channel VDD=10V , IDS=1A , VGEN =4.5V , RG=0.2Ω P-Channel VDD=-10V , IDS=-1A , VGEN =-4.5V , RG=6Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 9 3 3 2.5 1 16 13 40 36 42 45 20 37 675 510 178 270 105 120 pF 32 21.5 75 56 78 69.5 35 57.5 ns 13 12 nC Parameter (TA = 25°C unless otherwise noted) APM4500 Unit Min. Typ. Max. Test Condition Notes b : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 3 www.anpec.com.tw APM4500 Typical Characteristics N-Channel MOSFET Output Characteristics 20 VGS=3,4,5,6,7,8,9,10V VGS=2.5V Transfer Characteristics 20 ID-Drain Current (A) ID-Drain Current (A) 16 16 12 12 8 VGS=2V 8 TJ=125°C TJ=25°C TJ=-55°C 4 VGS=1.5V 4 0 0 1 2 3 4 5 6 7 8 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 0.06 IDS=250µA On-Resistance vs. Drain Current VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.05 0.04 VGS=2.5V 0.03 VGS=4.5V 0.02 0.01 0.00 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 4 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.10 0.09 ID=8A On-Resistance vs. Junction Temperature 2.00 VGS=4.5V ID=8A RDS(ON)-On-Resistance (Ω) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 VDS=10V ID=1A Capacitance 1000 Frequency=1MHz VGS-Gate-Source Voltage (V) 8 800 6 Capacitance (pF) Ciss 600 4 400 Coss Crss 2 200 0 0 4 8 12 16 20 0 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 5 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 10 60 Single Pulse Power IS-Source Current (A) 48 Power (W) 1.2 1.4 36 1 TJ=150°C TJ=25°C 24 12 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 100 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5°C/W 3.T JM -T A =P DM Z thJA 4.Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 6 www.anpec.com.tw APM4500 Typical Characteristics P-Channel MOSFET Output Characteristics 10 -VGS=3,4.5,6,7,8V Transfer Characteristics 10 -ID-Drain Current (A) 6 -ID-Drain Current (A) 8 -VGS=2V 8 6 4 -VGS=1.5V 4 TJ=25°C TJ=-55°C 2 -VGS=1V 2 TJ=125°C 0 0 1 2 3 4 5 6 7 8 9 10 0 0.0 0.5 1.0 1.5 2.0 2.5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 0.16 -IDS=250µA On-Resistance vs. Drain Current -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.14 0.12 0.10 -VGS=4.5V -VGS=2.5V 0.08 0.06 0.04 0.02 0 2 4 6 8 10 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 7 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.20 -ID=4.3A On-Resistance vs. Junction Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -VGS=4.5V -ID=4.3A RDS(ON)-On-Resistance (Ω) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 1 2 3 4 5 6 7 8 RDS(ON)-On-Resistance (Ω) (Normalized) 0.18 0.2 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 Capacitance 800 700 Frequency=1MHz -VGS-Gate-Source Voltage (V) -VDS=10V -ID=3A 4 Capacitance (pF) 600 Ciss 3 500 400 300 200 Coss 2 1 Crss 0 0 2 4 6 8 10 100 0 5 10 15 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 8 www.anpec.com.tw APM4500 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 10 14 12 Single Pulse Power -IS-Source Current (A) 10 Power (W) 1.4 1.6 8 6 4 2 TJ=150°C TJ=25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 0.1 1 10 100 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=62.5°C/W 3.T JM-T A=P DMZ thJA SINGLE PULSE D=0.01 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 9 www.anpec.com.tw APM4500 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 10 www.anpec.com.tw APM4500 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 11 APM4500 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t W F Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 12 www.anpec.com.tw APM4500 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - May., 2003 13 www.anpec.com.tw