APM4532

APM4532 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/5A, RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -30V/-3.5A, RDS(ON)=85mΩ(typ.) @ VGS=-10V RDS(ON)=135mΩ(typ.) @ VGS=-4.5V SO-8 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package G2 G1 D1 D1 S2 Applications S1 D2 D2 • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4532 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM4532 K : APM4532 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM4532 Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25°C unless otherwise noted) N-Channel 30 ±25 5 20 P-Channel -30 ±25 -3.5 -20 2 0.8 150 -55 to 150 62.5 °C °C °C/W A V Unit Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C IDM PD TJ TSTG RθjA 2 0.8 W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter (TA = 25°C unless otherwise noted) APM4532 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 35 60 85 135 0.7 -0.7 1 -1 1.5 -1.5 30 -30 1 -1 2 -2 ±100 ±100 45 70 95 150 1.3 -1.3 V mΩ nA Test Condition VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=-24V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±25V , VDS=0V VGS=10V , IDS=5A V µA V Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance VGS=4.5V , IDS=4A VGS=-10V , IDS=-3.5A VGS=-4.5V , IDS=-2.5A VSD a Diode Forward Voltage ISD=1.7A , VGS=0V ISD=-1.7A , VGS=0V Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 2 www.anpec.com.tw APM4532 Electrical Characteristics (Cont.) Symbol Dynamic Q g Qgs Qgd td(ON) T r td(OFF) T f Ciss Coss Crss a (TA = 25°C unless otherwise noted) APM4532 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 8 4.7 2 1.1 1 10 8 8 7 20 15 5 7 376 495 115 130 58 60 pF 15 15 20 20 28 28 15 18 ns 15 15 nC Parameter Test Condition Total Gate Charge N-Channel VDS=10V , IDS= 5A VGS=4.5V  P-Channel VDS=-10V , IDS=-3.5A VGS=-4.5V  N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=10Ω P-Channel Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=10Ω  Turn-off Fall Time Input Capacitance VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz Notes a : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 3 www.anpec.com.tw APM4532 Typical Characteristics N-Channel Output Characteristics 20 20.0 17.5 VGS=5,6,7,8,9,10V Transfer Characteristics ID-Drain Current (A) 15 V GS =4V ID-Drain Current (A) 15.0 12.5 10.0 7.5 5.0 2.5 TJ=25°C TJ=125°C TJ=-55°C 10 5 V GS =3V 0 0 1 2 3 4 5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.10 0.09 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.08 VGS=4.5V 0.07 0.06 0.05 0.04 0.03 0.02 0.01 V GS=10V -25 0 25 50 75 100 125 150 0.00 0 2 4 6 8 10 12 14 16 18 20 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 4 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.20 0.18 ID=5A On-Resistance vs. Junction Temperature 2.0 VGS=10V 1.8 ID=5A RDS(ON)-On-Resistance (Ω) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 700 VDS=10 V 8 IDS= 5 A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 600 6 Capacitance (pF) 500 400 300 200 Ciss 4 2 100 0 0 2 4 6 8 10 12 14 0 Coss Crss 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 5 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage 20 10 25 30 Single Pulse Power IS-Source Current (A) 1 TJ=150°C TJ=25°C Power (W) 1.2 1.4 20 15 10 0.1 5 0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 30 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 6 www.anpec.com.tw APM4532 Typical Characteristics P-Channel Output Characteristics 20 20 18 Transfer Characteristics -ID-Drain Current (A) 16 14 12 10 8 6 4 -ID-Drain Current (A) 15 -VGS=6,7,8,9,10V -V GS=5V TJ=25°C TJ=125°C TJ=-55°C 10 -V GS=4V 5 -V GS=3V 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 0 1 2 3 4 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250uA On-Resistance vs. Drain Current 0.250 0.225 0.200 0.175 0.150 0.125 0.100 0.075 0.050 0.025 -VGS=10V -VGS=4.5V -VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) -25 0 25 50 75 100 125 150 0.000 0 1 2 3 4 5 6 7 8 9 10 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 7 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage 0.30 -ID=3.5A On-Resistance vs. Junction Temperature 1.8 -VGS=10V -ID=3.5A RDS(ON)-On-Resistance (Ω) 0.25 0.20 0.15 0.10 0.05 0.00 RDS(ON)-On-Resistance (Ω) (Normalized) 2 3 4 5 6 7 8 9 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 800 Capacitance Frequency=1MHz -VGS-Gate-Source Voltage (V) 9 8 7 6 5 4 3 2 1 0 0 -VDS=10 V -IDS= 3.5 A 700 Capacitance (pF) 600 500 400 300 200 100 0 Ciss Coss Crss 1 2 3 4 5 6 7 8 0 5 10 15 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 8 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage 20 10 30 25 20 15 10 0.1 5 0 0.01 Single Pulse Power -IS-Source Current (A) 1 TJ=150°C TJ=25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Power (W) 0.1 1 10 30 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 9 www.anpec.com.tw APM4532 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 10 www.anpec.com.tw APM4532 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 11 APM4532 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 12 www.anpec.com.tw APM4532 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 13 www.anpec.com.tw