APM4532KC-TR

APM4532K Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V Pin Description D1 D1 D2 D2 • P-Channel -30V/-3.5A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V S1 G1 S2 G2 Top View of SOP − 8 (8) D1 (7) D1 (3) S2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 (4) G2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (1) D2 (5) D2 (6) N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4532 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4532 K : APM4532 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM4532K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation TA=25°C TA=100°C VGS=±10V N Channel 30 ±20 5 20 1.7 P Channel -30 ±20 -3.5 -14 -1.7 Unit V A A °C W °C/W 150 -55 to 150 2 0.8 62.5 Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4532K Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VGS=0V, IDS=-250µA VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VDS=-24V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250µA VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=10V, IDS=5A RDS(ON) a N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 30 -1 -30 1 -1 1.5 -1.5 2 -2 ±100 ±100 35 85 60 135 45 95 70 150 V µA V nA Drain-Source On-State Resistance VGS=-10V, IDS=-3.5A VGS=4.5V, IDS=4A VGS=-4.5V, IDS=-2.5A mΩ Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM4532K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4532K Min. Typ. Max. Test Condition Unit Diode Characteristics VSD a Diode Forward Voltage b ISD=1.7A, VGS=0V ISD=-1.7A, VGS=0V N-Ch P-Ch 0.7 -0.7 1.3 -1.3 V Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=25V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-25V, N-Channel VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω P-Channel VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω b N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3 13 440 530 90 90 40 40 10 8 8 7 20 15 5 7 15 15 20 20 28 28 15 18 Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time pF ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDS=15V, VGS=10V, IDS=5A P-Channel VDS=-15V, VGS=-10V, IDS=-3.5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 12.6 8 4.7 2 1.1 1 17 12 nC a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM4532K Typical Characteristics N-Channel Power Dissipation 2.5 6 Drain Current 2.0 5 ID - Drain Current (A) TA=25 C o Ptot - Power (W) 4 1.5 3 1.0 2 0.5 1 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o 0.0 0 20 40 60 80 100 120 140 160 0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 ID - Drain Current (A) 10 on )L im it Rd s( 300µs 1ms 0.1 0.05 0.02 0.01 0.1 1 10ms 100ms 1s 0.01 Single Pulse Mounted on 1in pad o RθJA : 62.5 C/W 2 0.1 DC 0.01 0.01 TA=25 C 0.1 1 10 100 O 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) N-Channel Output Characteristics 20 18 16 VGS=5,6,7,8,9,10V 100 90 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 80 70 60 50 40 30 20 10 VGS=10V VGS=4.5V ID - Drain Current (A) 14 12 10 8 6 4 3V 2 0 0 1 2 3 4 5 4V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 20 18 16 Gate Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 IDS=250µΑ ID - Drain Current (A) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Tj=25 C o Tj=125 C Tj=-55 C o o Normalized Threshold Voltage 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance 2.0 1.8 VGS = 10V IDS = 5A 20 10 Tj=150 C o Source-Drain Diode Forward Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 35mΩ 0 25 50 75 100 125 150 o IS - Source Current (A) 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 700 Frequency=1MHz 9 600 10 VDS=10V IDS= 5A Gate Charge VGS - Gate - source Voltage (V) 8 7 6 5 4 3 2 1 0 0 3 6 9 12 15 C - Capacitance (pF) 500 Ciss 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 30 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) P-Channel Power Dissipation 2.5 4 Drain Current 2.0 1.5 -ID - Drain Current (A) 3 Ptot - Power (W) 2 1.0 1 0.5 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 TA=25 C,VG=-10V 0 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 -ID - Drain Current (A) it 10 on )L im 300µs 1ms 10ms 100ms 1s Rd 0.1 0.05 0.02 0.01 1 s( 0.01 Single Pulse Mounted on 1in pad o RθJA : 62.5 C/W 2 0.1 DC 0.01 0.01 TA=25 C O 0.1 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) P-Channel Output Characteristics 14 VGS= -5,-6,-7,-8,-9,-10V 12 240 220 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 200 180 160 140 120 100 80 60 40 20 VGS= -4.5V -ID - Drain Current (A) 10 8 -4V 6 4 2 0 -3V VGS= -10V 0 1 2 3 4 5 0 0 2 4 6 8 10 12 14 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 14 12 1.8 1.6 Gate Threshold Voltage IDS= -250µΑ Normalized Threshold Voltage -ID - Drain Current (A) 10 8 6 4 2 0 Tj=-55 C Tj=25 C o o 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 Tj=125 C o 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance 1.8 VGS = -10V 1.6 IDS = -3.5A Source-Drain Diode Forward 20 10 o Normalized On Resistance -IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 R ON@Tj=25 C: 85mΩ 0 25 50 75 100 125 150 o Tj=150 C o Tj=25 C 1 0.1 0.04 0.0 0.0 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 800 Frequency=1MHz 700 9 10 VDS= -10V IDS= -3.5A Gate Charge -VGS - Gate - source Voltage (V) 30 8 7 6 5 4 3 2 1 600 C - Capacitance (pF) Ciss 500 400 300 200 100 Crss 0 0 5 10 15 20 25 Coss 0 0 1 2 3 4 5 6 7 8 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM4532K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw APM4532K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw APM4532K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 12 www.anpec.com.tw APM4532K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 (mm) Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 13 www.anpec.com.tw