APM4542

APM4542 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -30V/-5.5A,RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V SO-8 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package G1 G2 D1 D1 S2 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. S1 D2 D2 N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4542 Lead Free Code Handling Code Temp. Range Package Code APM4542 XXXXX Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Orginal Device XXXXX - Date Code APM4542 K : ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 1 www.anpec.com.tw APM4542 Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25°C unless otherwise noted) N-Channel 30 ±20 7 28 P-Channel -30 ±20 -5 -20 2 0.8 150 -55 to 150 62.5 °C °C °C/W A V Unit Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C IDM PD TJ TSTG RθjA 2 0.8 W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter (TA = 25°C unless otherwise noted) APM4542 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch  17 22 35 51 0.7 -0.7 1 -1 1.5 -1.5 30 -30 1 -1 2 -2 ±100 ±100 24 30 56 78 1.3 -1.3 V mΩ nA Test Condition VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=-24V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V VGS=±20V , VDS=0V VGS=10V , IDS=7A VGS=4.5V , IDS=5A VGS=-10V , IDS=-5.5A VGS=-4.5V , IDS=-4A ISD=2A , VGS=0V ISD=-2.3A , VGS=0V V µA V IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance VSD  a Diode Forward Voltage Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 2 www.anpec.com.tw APM4542 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Dynamic Qg Qgs Qgd td(ON) T r td(OFF) Tf Ciss Coss Crss b Parameter Test Condition APM4542 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 19 28 1.6 5 3.6 4 11 12 17 15 36 35 20 15 835 950 145 160 15 110 pF 20 24 28 29 62 60 36 30 ns 28 36 nC Total Gate Charge N-Channel VDS=15V , IDS= 7A VGS=10V  P-Channel VDS=-15V , IDS=-5.5A VGS=-10V  N-Channel VDD=15V , IDS=2A , VGEN=10V , RG=6Ω , RL=7.5Ω P-Channel VDD=-15V , IDS=-2A , VGEN=-10V , RG=6Ω, RL=7.5Ω N-Channel VGS=0V, VDS=25V Frequency=1.0MHz P-Channel VGS=0V, VDS=-25V Frequency=1.0MHz Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes b : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 3 www.anpec.com.tw APM4542 Typical Characteristics N-Channel Output Characteristics 28 24 VGS= 4,5,6,7,8,9,10V 28 24 Transfer Characteristics ID-Drain Current (A) ID-Drain Current (A) 20 16 12 8 4 VGS=2V 0 0 1 2 3 4 5 VGS=3V 20 16 12 8 4 0 1.5 Tj=25 C o o Tj=125 C o Tj=-55 C 2.0 2.5 3.0 3.5 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.6 0.040 On-Resistance vs. Drain Current VGS(th)-Threshold Voltage (V) (Normalized) RDS(on)-On-Resistance (Ω) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 IDS =250µA 0.035 0.030 VGS=4.5V 0.025 0.020 0.015 0.010 0.005 0.000 0 4 8 12 16 20 24 28 VGS=10V -25 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 4 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.8 On-Resistaence vs. Junction Temperature 1.8 RDS(on)-On-Resistance (Ω) RDS(on)-On-Resistance (Ω) (Normalized) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 ID= 7A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 VGS = 10V IDS = 7A 8 10 -25 0 25 50 75 100 125 150 VGS-Gate-to-Source Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 1200 VDS=15V Capacitance Characteristics Frequency=1MHz VGS-Gate-to-Source Voltage (V) C-Capacitance (pF) 8 IDS =7A 1000 Ciss 800 600 400 200 0 Coss Crss 6 4 2 0 0 4 8 12 16 20 0 5 10 15 20 25 30 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 5 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage 30 75 Single Pulse Power IS-Source Current (A) 10 60 Power (W) 45 1 Tj=150 C o Tj=25 C o 30 15 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 0.1 1 10 30 VSD-Source-to-Drain Voltage Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 PDM t 0.1 D=0.1 D=0.05 D=0.02 SINGLE PULSE 1 1.Duty Cycle, 2D= t1/t2 2.Per Unit Base=RthJA=62.5 C/W 3.TJM-TA=PDMZthJA o t 0.01 1E-4 D=0.01 4.Surface Mounted 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 6 www.anpec.com.tw APM4542 Typical Characteristics P-Channel Output Characteristics 20 -VGS= 4,5,6,7,8,9,10V 20 Transfer Characteristics -ID-Drain Current (A) 15 -ID-Drain Current (A) 15 10 10 Tj=125 C o 5 -VGS=3V 5 Tj=25 C o Tj=-55 C o 0 0 0 2 4 6 8 10 0 1 2 3 4 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 -IDS=250µΑ 0.105 On-Resistance vs. Drain Current -VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(on)-On-Resistance (Ω) 1.50 0.090 0.075 VGS=-4.5V 0.060 0.045 0.030 0.015 0.000 VGS=-10V -25 0 25 50 75 100 125 150 0 5 10 15 20 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 7 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage 0.150 -ID= 5.5A 0.125 0.100 0.075 0.050 0.025 0.000 On-Resistance vs. Junction Temperature 1.8 -VGS = 10V -IDS = 5.5A RDS(on)-On-Resistance (Ω) RDS(on)-On-Resistance (Ω) (Normalized) 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 2 3 4 5 6 7 8 9 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 1500 Capacitance Frequency=1MHz 1250 -VGS-Gate-Source Voltage (V) -VDS=15 V 8 -IDS= 5.5 A Capacitance (pF) 1000 750 500 250 0 Ciss 6 4 2 Coss Crss 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 8 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage 20 10 75 Single Pulse Power -IS-Source Current (A) 60 1 Tj=150 C o Power (W) Tj=25 C o 45 30 0.1 15 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 0.1 1 10 30 -VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 PDM t 0.1 D=0.1 D=0.05 D=0.02 SINGLE PULSE 1 1.Duty Cycle, 2D= t1/t2 o 2.Per Unit Base=RthJA=62.5 C/W 3.TJM-TA=PDMZthJA t 0.01 1E-4 D=0.01 4.Surface Mounted 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 9 www.anpec.com.tw APM4542 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 10 www.anpec.com.tw APM4542 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 11 APM4542 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 12 www.anpec.com.tw APM4542 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 13 www.anpec.com.tw