APM4550KC-TRL

APM4550K Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 30V/7A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V Pin Description • P-Channel -30V/-5A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V RDS(ON) = 62mΩ (typ.) @ VGS = -4.5V Top View of SOP − 8 (7) (8) D1 D1 (3) S2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 (4) G2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (1) D2 (5) D2 (6) N-Channel P-Channel Ordering and Marking Information APM4550 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel TU : Tube Lead Free Code L : Lead Free Device XXXXX - Date Code APM4550K : APM4550 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 1 www.anpec.com.tw APM4550K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation TA=25°C TA=100°C VGS=±10V (TA = 25°C unless otherwise noted) N Channel 30 ±20 7 30 2.5 150 -55 to 150 2 0.8 62.5 W °C/W P Channel -30 ±20 -5 -20 -2 A °C V A Unit Thermal Resistance-Junction to Ambient 2 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4550K Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VGS=0V, IDS=-250µA VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VDS=-24V, VGS=0V TJ=85°C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current VDS=VGS, IDS=250µA VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=10V, IDS=7A RDS(ON) a N-Ch P-Ch N-Ch 30 -30 1 30 -1 V µA P-Ch -30 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 40 30 62 1 -1 1.5 -1.5 2 -2 ± 100 ± 100 27.5 50 40 80 mΩ nA V Drain-Source On-State Resistance VGS=-10V, IDS=-5A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 2 www.anpec.com.tw APM4550K Electrical Characteristics (Cont.) S ymbol Parameter (TA = 25°C unless otherwise noted) APM4550K Min. Typ. M ax. Unit Test Condition Diode Characteristics VSD trr Q rr a Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge b ISD=2.5A, V GS=0V ISD=-2A, V GS=0V N-Channel ISD=7A, dlSD/dt=100A/µs N-Channel ISD=-5A, dlSD/dt=100A/µs N-Ch P-Ch N -Ch P-Ch N -Ch P-Ch 0.8 -0.8 8 13 3 5 1.3 -1.3 V ns nC Dynamic Characteristics RG Gate Resistance VGS=0V,V DS=0V,F=1MHz N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz N-Channel VDD=15V, R L=15Ω , IDS=1A, V GEN=10V, R G=6Ω P-Channel VDD=-15V, R L=15Ω, IDS=-1A, V GEN=-10V, R G=6Ω b N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch 2 8.3 620 590 85 95 65 70 6 5 10 12 22 27 3 13 11 9 18 23 41 50 6 24 Ω C iss Input Capacitance C oss Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time pF C rss td(ON) Tr td(OFF) Tf ns Gate Charge Characteristics Qg Q gs Q gd Total Gate Charge N-Channel VDS=15V, V GS=10V, IDS=7A P-Channel VDS=-15V, V GS=-10V, IDS=-5A N -Ch P-Ch N -Ch P-Ch N -Ch P-Ch 14 11 1.4 1.3 2.6 2.7 19 15 nC Gate-Source Charge Gate-Drain Charge Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 3 www.anpec.com.tw APM4550K Typical Characteristics N-Channel Power Dissipation 2.5 Drain Current 8 7 2.0 6 ID - Drain Current (A) o Ptot - Power (W) 1.5 5 4 3 2 1 1.0 0.5 TA=25 C 0.0 0 20 40 60 80 100 120 140 160 o TA=25 C,VG=10V 0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 ID - Drain Current (A) 10 Rd s(o n) Lim it 300µs 1ms 10ms 100ms 0.1 0.05 0.02 0.01 1 0.01 Single Pulse 0.1 1s DC 0.01 0.01 TA=25 C O 0.1 1 10 100 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 4 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) N-Channel Output Characteristics 30 27 24 VGS= 4.5,5,6,7,8,9,10V 4V 50 45 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 40 35 30 25 20 15 10 VGS=10V VGS=4.5V ID - Drain Current (A) 21 18 15 12 9 6 3 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3V 3.5V 5 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance 50 ID=7A 45 Gate Threshold Voltage 1.6 1.4 IDS=250µΑ RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage 2 3 4 5 6 7 8 9 10 40 35 30 25 20 15 10 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 5 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 7A 10 Tj=150 C o Source-Drain Diode Forward 30 Normalized On Resistance 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 20mΩ 0 25 50 75 100 125 150 o IS - Source Current (A) Tj=25 C 1 o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 1000 Frequency=1MHz 900 800 9 10 VDS=15V IDS=7A Gate Charge VGS - Gate - source Voltage (V) 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 C - Capacitance (pF) 700 600 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 30 Ciss VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 6 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) P-Channel Power Dissipation 2.5 Drain Current 6 2.0 5 -ID - Drain Current (A) o Ptot - Power (W) 4 1.5 3 1.0 2 0.5 1 TA=25 C 0 20 40 60 80 100 120 140 160 0.0 0 TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 50 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 -ID - Drain Current (A) Rd s(o n) Lim it 10 300µs 1ms 0.1 0.02 0.01 0.05 1 10ms 100ms 0.1 1s DC 0.01 Single Pulse 0.01 0.01 TA=25 C O 0.1 1 10 100 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 7 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) P-Channel Output Characteristics 20 18 16 VGS=-4.5-5,-6,-7 -8,-9,-10V -4V 90 100 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 80 VGS=-4.5V 70 60 50 VGS=-10V 40 30 20 -ID - Drain Current (A) 14 12 10 8 6 4 2 -3.5V -3V -2.5V -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 0 4 8 12 16 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance 100 ID=-5A 90 1.6 1.4 Gate Threshold Voltage IDS= -250µΑ RDS(ON) - On - Resistance (mΩ) 80 70 60 50 40 30 20 Normalized Threshold Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 8 www.anpec.com.tw APM4550K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance 2.0 VGS = -10V 1.8 IDS = -5A Source-Drain Diode Forward 20 10 Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 0.4 RON@Tj=25 C: 40mΩ 0.2 -50 -25 0 25 50 75 100 125 150 o -IS - Source Current (A) Tj=150 C o o Tj=25 C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 800 700 10 Gate Charge VDS= -15V 9 IDS= -5A Frequency=1MHz -VGS - Gate - source Voltage (V) 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 600 Ciss C - Capacitance (pF) 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 30 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 9 www.anpec.com.tw APM4550K Package Information SOP-8 D SEE VIEW A E1 E h X 45 ° e b c 0.25 GAUGE PLANE SEATING PLANE VIEW A SOP-8 INCHES MAX. MIN. MAX. A2 A1 A S Y M B O L MILLIMETERS MIN. A A1 A2 b c D E E1 e h L 0 0.25 0.40 0° 0.10 1.25 0.31 0.17 4.90 BSC 6.00 BSC 3.90 BSC 1.00 BSC 1.75 0.25 0.004 0.049 0.51 0.25 0.012 0.007 0.193 BSC 0.236 BSC 0.154 BSC 0.050 BSC 0.50 1.27 8° 0.010 0.016 0° 0 L 0.069 0.010 0.020 0.010 0.020 0.050 8° Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 10 www.anpec.com.tw APM4550K Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Devices Per Reel Package Type SOP- 8 Devices Per Reel 2500 Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 11 www.anpec.com.tw APM4550K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Time 25°C to Peak Temperature Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds 6°C/second max. 6 minutes max. Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 8 minutes max. Notes: All temperatures refer to topside of the package. Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 12 www.anpec.com.tw APM4550K Classification Reflow Profiles (Cont.) Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures Package Thickness 100mA Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pao Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 13 www.anpec.com.tw